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| Zener Diodes Composite Elements MA111 MAZC062D Silicon planer type Constant voltage, constant current, waveform cripper and surge absorption circuit 2.9 -0.05 2.8 -0.3 0.650.15 +0.2 Unit : mm 0.650.15 +0.25 1.5 -0.05 0.95 0.95 q Mini q Low q Two type package (3-pin) joint capacity zener diode (VZ = 6.2V) anode-common element wiring 1.90.2 +0.2 s Features 1 3 0.4 -0.05 +0.1 2 1.45 +0.2 1.1 -0.1 s Absolute Maximum Ratings (Ta= 25C) Parameter Instanious forward current Total power dissipation Junction temperature Storage temperature * With a printed-circuit board Symbol IFRM Ptot* Tj Tstg Rating 200 200 150 - 55 to + 150 Unit mA mW C C 1 1 : Cathode 1 2 : Cathode 2 3 : Anode 1 Anode 2 Mini Type Package (3-pin) s Internal Connection 0 to 0.1 0.1 to 0.3 0.40.2 0.8 3 2 s Electrical Characteristics (Ta= 25C)* Parameter Forward voltage Zener voltage Operating resistance Reverse current Terminal capacitance Symbol VF VZ RZ IR Ct *2 RZK 1 Condition min 5.9 typ 0.9 max 1.0 6.5 100 30 3 8 Unit V V A pF IF=10mA IZ= 5mA IZ= 0.5mA IZ= 5mA VR= 5.5V VR= 0V, f=1MHz Note 1. Rated input/output frequency : 5MHz 2. Test method : Depend on JIS C7031 testing 3. Electrostatic discharge is 15kV Test method : IEC-801(C=150pF, R=330, Contact discharge : 10 times) Test unit : ESS-200AX 4. * 1 : The VZ value is for the temperature of 25C. In other cases, carry out the temperature compensation. * 2 : Guaranteeed at 20ms after power application s Marking 6.2C 0.16 -0.06 +0.1 |
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