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| Surface Mount Monolithic PIN Diode Chip MA4SPS502 Features n n n n n n n Case Style ODS-12701,2 Surface Mount Device No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch Protection Low Parasitic Capacitance and Inductance High Power Handling (Efficient Heatsinking) Description This device is a silicon-glass PIN diode chip fabricated with M/A-COM's patented HMICTM process. This device features two silicon pedestals embedded in a low loss glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls conductive. Selective backside metalization is applied producing a surface mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. Applications These packageless devices are suitable for usage in moderate incident power (10 W C.W.) or higher incident peak power (500 W) series, shunt, or series-shunt switches. Small parasitic inductance, 0.35 nH, and excellent RC time constant, 0.22 pS, make the devices ideal for wireless TR switch and accessory switch circuits, where higher P1dB and IP3 values are required. These diodes can also be used in , T, tapered resistance, and switched-pad attenuator control circuits for 50 or 75 systems. Dim Inches Millimeters 1. Backside metal: 0.1 micron thk. gold. 2. Hatched areas indicate bond pads. Absolute Maximum Ratings1 @ TA = +25C (unless otherwise specified) Parameter Reverse Voltage Forward Current Operating Temperature Storage Temperature Dissipated Power (RF & DC) Mounting Temperature Absolute Maximum -300 V 600 mA -65 C to +150 C -65 C to +150 C 2W +235 C for 10 seconds A B C D E Min. 0.056 0.022 0.004 0.020 0.013 Max. 0.058 0.024 0.008 0.022 0.015 Min. 1.435 0.555 0.102 0.505 0.325 Max. 1.485 0.605 0.203 0.555 0.375 1. Exceeding these limits may cause permanent damage. Surface Mount Monolithic PIN Diode Chip Electrical Specifications: @ 25 C Symbol CT CT RS RS VF VF VR IR IR RJL TL Test Conditions -40 Volts, 1 MHz -40 Volts, 1 GHz 100 mA, 100 MHz 20 mA, 100 MHz 100 mA 10 mA 10 A -300 V -40 V Steady state +10 mA / -6 mA measured at 90% voltage MA4SPS502 SurMount TM Series Units pF pF V V V A nA C/W s Min. Typ. 0.140 0.090 1.4 2.4 1.24 0.87 Max. 0.200 1.50 1.00 -300 -330 10 8 75 2.8 Handling Procedures All semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin oils. The use of plastic tipped tweezers or vacuum pickups is strongly recommended for individual components. Bulk handling should insure that abrasion and mechanical shock are minimized. Functional Schematic1 Ls Rp Cp Bonding Techniques Attachment to a circuit board is made simple through the use of surface mount technology. Mounting pads are conveniently located on the bottom surface of these diodes and are removed from the active junction locations. These devices are well suited for solder attachment onto hard and soft substrates. The use of 80/20 Au/Sn and 60/40 Sn/Pb solder is recommended, with an equal temperature profile across the contacts. Conductive epoxy paste for attachment may also be used. When soldering these devices to a hard substrate, hot gas die bonding is preferred. We recommend utilizing a vacuum tip and a force of 60 to 100 grams applied normal to the top surface of the device. When soldering to soft substrates, it is recommended to use a lead-tin interface at the circuit board mounting pads. Position the die so that its mounting pads are aligned with the circuit board's mounting pads and reflow the solder by heating the circuit trace near the mounting pad while applying 60 to 100 grams of force perpendicular to the top surface of the die. Since the HMICTM glass is transparent, the edges of the mounting pads closest to each other can be visually inspected through the die after attach is completed. Rvia Rvia - + 1. Rs = 2 * Rvia + Rp Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 2 Surface Mount Monolithic PIN Diode Chip Typical Performance Curves @ +25 C Typical Total Resistance RS vs. Forward Current and Frequency 4.0 3.5 3.0 RS (ohms) 2.5 2.0 1.5 1.0 0.5 0.0 0.00E+00 2.00E+08 4.00E+08 6.00E+08 8.00E+08 1.00E+09 100mA 10mA 20mA 500mA CP (F) MA4SPS502 SurMount TM Series Typical Total Capacitance CP vs. Reverse Voltage and Frequency 2.00E-13 0V 1.50E-13 1.00E-13 -40V 5.00E-14 -5V 0.00E+00 0.0E+00 2.0E+08 4.0E+08 6.0E+08 8.0E+08 1.0E+09 FREQUENCY (Hz) FREQUENCY (Hz) CP vs. Vr @ 100 MHz and 1 GHz 2.0E-13 100MHz 1.5E-13 1.0E+06 RP vs. Vr @ 100 MHz and 1 GHz 100MHz 1.0E+05 1.0E-13 1GHz 5.0E-14 RP (ohms) CP (F) 1.0E+04 1GHz 0.0E+00 0 5 10 15 20 25 30 35 40 1.0E+03 0 10 20 30 40 Vr (V) V r (V) RS vs. IF @ 100 MHz and 1 GHz 10 LS vs. Frequency @ 10 mA 1.0E-08 RS (ohms) 1GHz Ls (H) 0.100 1.0E-09 100MHz 1 0.001 0.010 1.0E-10 5.00E+08 7.00E+08 9.00E+08 1.10E+09 1.30E+09 1.50E+09 1.70E+09 If (A) FREQUENCY (Hz) Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 3 |
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