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| Variable Capacitance Diodes MA111 MA357J Silicon epitaxial planer type For CATV tuner INDICATES CATHODE Unit : mm s Features q q 0.40.15 1 2 Small series resistance rD 0.40.15 1.70.1 2.50.2 0.45-0.05 +0.1 s Absolute Maximum Ratings (Ta= 25C) Parameter Reverse voltage (DC) Peak reverse voltage Junction temperature Storage temperature * RL =10k Symbol VR VRM * Tj Tstg Rating 34 35 150 - 55 to +150 Unit V V C C 0.90.1 1 : Anode 2 : Cathode S-Mini Type Package (Flat 2-pin) Marking Symbol : 7K s Electrical Characteristics (Ta= 25C) Parameter Reverse current (DC) Symbol IR CD(0V) CD(2V) Diode capacitance CD(25V) CD(10V) CD(17V) Capacitance ratio Diode capacitance deviation Series resistance C D(2V)/CD(25V) C rD*1 CD (2V) (10V) (17V) (25V) CD= 9pF, f= 470MHz *2 VR= 30V VR= 0V, f= 1MHz VR= 2V, f= 1MHz VR= 25V, f= 1MHz VR= 10V, f= 1MHz VR= 17V, f= 1MHz 58.0 29.00 2.53 6.40 3.50 11.0 2.0 0.54 34.30 2.92 8.32 4.35 Condition min typ max 10 Unit nA pF pF pF pF pF -- % Note 1. Rated input/output frequency : 470MHz 2. *1 : r D measurement device : YHP MODEL 4191A RF IMPEDANCE ANALYZER 3. *2 : Low Signal Level s Marking 7K 0.16-0.06 +0.1 1.250.1 Large capacity variation ratio Variable Capacitance Diodes MA357J IF - VF 120 25C CD (pF) CD - VR 100 f=1MHz Ta=25C 100 IR - Ta VR=30V 100 50 IF (mA) 80 Ta=60C -40C 20 Diode capacitance Forward current 60 10 Reverse current IR (nA) 30 10 1 40 5 3 2 0.1 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage VF (V) 1 0 4 8 12 16 20 24 28 32 36 40 Reverse voltage VR (V) 0.01 0 20 40 60 80 100 120 140 160 Ta (C) Ambient temperature CD - Ta 1.04 f=1MHz 1.03 1.02 CD (Ta) CD (Ta=25C) VR=2V 1.01 17V 10V 25V 1.00 0.99 0.98 0 20 40 60 Ta 80 (C) 100 Ambient temperature |
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