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| Band Switching Diodes MA2C856 Silicon epitaxial planar type Unit : mm For band switching 0.45 max. * Extra-small DHD envelope, allowing to insert into a 5 mm pitch hole * Less voltage dependence of the terminal capacitance Ct * Low forward dynamic resistance rf * Optimum for a band switching of a tuner 0.2 max. 0.2 max. I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature Storage temperature Symbol VR IF Topr Tstg Rating 35 100 -25 to +85 -55 to +100 Unit V mA C C 2 1.75 max. 1 : Cathode 2 : Anode JEDEC : DO-34 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC)* Symbol IR VF Ct rf VR = 33 V IF = 100 mA VR = 15 V, f = 1 MHz IF = 3 mA, f = 100 MHz Conditions Min Typ Max 100 1 2 0.85 Unit nA V pF Forward voltage (DC) Terminal capacitance Forward dynamic resistance Note) 1 Rated input/output frequency: 100 MHz 2 * : Measurement with the beam shielded I Cathode Indication Type No. Color MA2C856 Yellow 13 min. 2.2 0.3 13 min. I Features COLORED BAND INDICATES CATHODE 1 1 MA2C856 IF V F 102 103 Ta = 125C Band Switching Diodes IR V R 103 IR T a 102 102 Forward current IF (mA) 10 Reverse current IR (nA) Reverse current IR (nA) 75C 10 VR = 25 V 10 10 V 1 1 1 10-1 75C 10-2 Ta = 125C 0 0.2 0.4 0.6 25C - 20C 0.8 1.0 10-1 25C 10-2 10-1 10-2 0 10 20 30 40 50 0 40 80 120 160 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (C) rf f 1.6 IF = 3 mA Ta = 25C 8 rf f IF = 3 mA Ta = 25C 2.0 rf IF f = 100 MHz Ta = 25C Forward dynamic resistance rf () Forward dynamic resistance rf () Forward dynamic resistance rf () 1.2 6 1.5 0.8 4 1.0 0.4 2 0.5 0 10 30 100 300 1 000 0 1 3 10 30 100 300 1 000 0 10-1 1 10 102 Frequency f (MHz) Frequency f (MHz) Forward current IF (mA) Ct VR 3.2 f = 1 MHz Ta = 25C Terminal capacitance Ct (pF) 2.4 1.6 0.8 0 0 10 20 30 40 Reverse voltage VR (V) 2 |
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