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| LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon COLLECTOR 3 L2SA1774*T1 3 1 BASE 2 EMITTER 1 2 SC-89 !Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Limits -60 -50 -6 -0.15 Unit V V V A (DC) PC 0.15 W Tj Tstg 150 -55~+150 C C !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -60 -50 -6 - - - 120 - - Typ. - - - - - - - 140 4.0 Max. - - - -0.1 -0.1 -0.5 560 - 5.0 Unit V V V A A V - MHz pF IC=-50A IC=-1A IE=-50A VCB=-60V VEB=-6V IC/IB=-50mA/-5mA VCE=-6V, IC=-1mA VCE=-12V, IE=2mA, f=30MHz VCB=-12V, IE=0A, f=1MHz Conditions !Device marking L2SA1774QT1=FQ L2SA1774ST1=FS L2SA1774RT1=FR ! hFE values are classified as follows: Item hFE Q 120~270 R 180~390 S 270~560 L2SA1774*T1-1/3 LESHAN RADIO COMPANY, LTD. L2SA1774*T1 !Electrical characteristic curves -50 COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : IC (mA) -20 -10 -5 -2 -1 -0.5 -0.2 -0.1 COLLECTOR CURRENT : IC (mA) Ta=100C 25C -40C VCE=-6V -10 -35.0 Ta=25C -100 -31.5 -28.0 -24.5 Ta=25C -500 -450 -400 -350 -300 -8 -80 -6 -21.0 -17.5 -60 -250 -200 -4 -14.0 -10.5 -40 -150 -100 -2 -7.0 -3.5A -20 -50A -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 -0.4 -0.8 -1.2 IB=0 -1.6 -2.0 IB=0 0 -1 -2 -3 -4 -5 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO MITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics (I) Fig.3 Grounded emitter output characteristics (II) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 500 500 Ta=25C VCE=-5V -3V -1V DC CURRENT GAIN : hFE 200 Ta=100C 25C -40C -1 Ta=25C DC CURRENT GAIN : hFE -0.5 200 100 -0.2 IC/IB=50 100 -0.1 20 10 50 50 VCE=-6V -5 -10 -20 -50 -100 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (I) Fig.5 DC current gain vs. collector current (II) Fig.6 Collector-emitter saturation voltage vs. collector current (I) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=10 -0.5 TRANSITION FREQUENCY : fT (MHz) Ta=25C VCE=-12V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) -1 1000 20 Cib 10 500 Ta=25C f=1MHz IE=0A IC=0A Co b -0.2 Ta=100C 25C -40C 200 5 -0.1 100 2 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 50 0.5 1 2 5 10 20 50 100 -0.5 -1 -2 -5 -10 -20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation voltage vs. collector current (II) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage L2SA1774*T1-2/3 LESHAN RADIO COMPANY, LTD. L2SA1774*T1 SC-89 A -X- 3 1 2 B -Y- S K G 2 PL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF --- --- 10 _ --- --- 10 _ 1.50 1.60 1.70 INCHES NOM 0.063 0.034 0.028 0.011 0.020 BSC 0.021 REF 0.006 0.016 0.043 REF --- --- 0.063 D 0.08 (0.003) M 3 PL XY M C N J -TSEATING PLANE DIM A B C D G H J K L M N S MIN 0.059 0.030 0.024 0.009 0.004 0.012 --- --- 0.059 MAX 0.067 0.040 0.031 0.013 0.008 0.020 10 _ 10 _ 0.067 H H L G RECOMMENDED PATTERN OF SOLDER PADS L2SA1774*T1-3/3 |
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