|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
PD - 97285 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package IRGI4085PBF Key Parameters 330 1.21 210 150 V V A C VCE min VCE(ON) typ. @ IC = 28A IRP max @ TC= 25C TJ max C G E E C G n-channel G Gate C Collector TO-220AB Full-Pak E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter VGE IC @ TC = 25C IC @ TC = 100C IRP @ TC = 25C PD @TC = 25C PD @TC = 100C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current c Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 300 10lbxin (1.1Nxm) N Max. 30 28 15 210 38 15 0.30 -40 to + 150 Units V A W W/C C Thermal Resistance Parameter RJC Junction-to-Case d Typ. --- Max. 3.29 Units C/W www.irf.com 1 05/30/07 IRGI4085PBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter BVCES V(BR)ECS VCES/TJ Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltagee Breakdown Voltage Temp. Coefficient Min. 330 30 --- --- --- Typ. Max. Units --- --- 0.31 1.05 1.21 1.35 1.68 2.23 1.90 --- -10 2.0 5.0 100 --- --- 51 84 30 48 37 180 102 45 38 234 185 --- 854 977 2287 141 73 5.0 13 --- --- --- --- 1.50 --- --- --- --- 5.0 --- 25 --- --- 100 -100 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- nH --- pF ns J ns ns S nC nA V mV/C A V V Conditions VGE = 0V, ICE = 1 mA VGE = 0V, ICE = 1 A V/C Reference to 25C, ICE = 1mA VGE = 15V, ICE = 15A e VGE = 15V, ICE = 28A e V VGE = 15V, ICE = 40A e VGE = 15V, ICE = 70A e VGE = 15V, ICE = 120A e VGE = 15V, ICE = 70A, TJ = 150C e VCE = VGE, ICE = 500A VCE = 330V, VGE = 0V VCE = 330V, VGE = 0V, TJ = 100C VCE = 330V, VGE = 0V, TJ = 150C VGE = 30V VGE = -30V VCE = 25V, ICE = 25A VCE = 200V, IC = 25A, VGE = 15Ve IC = 25A, VCC = 196V RG = 10, L=200H, LS= 150nH TJ = 25C IC = 25A, VCC = 196V RG = 10, L=200H, LS= 150nH TJ = 150C VCC = 240V, VGE = 15V, RG= 5.1 L = 220nH, C= 0.40F, VGE = 15V VCC = 240V, RG= 5.1, TJ = 25C L = 220nH, C= 0.40F, VGE = 15V VCC = 240V, RG= 5.1, TJ = 100C VGE = 0V VCE = 30V = 1.0MHz, Between lead, 6mm (0.25in.) from package and center of die contact See Fig.13 VCE(on) Static Collector-to-Emitter Voltage --- --- --- VGE(th) VGE(th)/TJ ICES Gate Threshold Voltage Gate Threshold Voltage Coefficient Collector-to-Emitter Leakage Current 2.6 --- --- --- --- IGES gfe Qg Qgc td(on) tr td(off) tf td(on) tr td(off) tf tst EPULSE Gate-to-Emitter Forward Leakage Gate-to-Emitter Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Collector Charge Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On delay time Rise time Turn-Off delay time Fall time Shoot Through Blocking Time Energy per Pulse --- --- --- --- --- --- --- --- --- --- --- --- --- 100 --- --- Cies Coes Cres LC LE Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance Internal Emitter Inductance --- --- --- --- --- Notes: Half sine wave with duty cycle = 0.10, ton=2sec. R is measured at TJ of approximately 90C. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRGI4085PBF 600 Top 600 V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE Top 500 400 ICE (A) Bottom 500 400 ICE (A) Bottom V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE 300 200 100 0 0 5 10 15 VCE (V) 20 25 30 300 200 100 0 0 5 10 15 VCE (V) 20 25 30 Fig 1. Typical Output Characteristics @ 25C 400 Top V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE Fig 2. Typical Output Characteristics @ 75C 400 Top V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE 300 Bottom 300 Bottom ICE (A) 200 ICE (A) 200 100 100 0 0 5 10 15 VCE (V) 20 25 30 0 0 5 10 15 VCE (V) 20 25 30 Fig 3. Typical Output Characteristics @ 125C 500 IC, Collector-to-Emitter Current (A) Fig 4. Typical Output Characteristics @ 150C 15 IC = 25A 400 10 VCE (V) 300 T J = 150C 200 T J = 25C T J = 25C T J = 150C 5 100 0 4 6 8 10 12 14 16 VGE, Gate-to-Emitter Voltage (V) 0 5 10 VGE (V) 15 20 Fig 5. Typical Transfer Characteristics Fig 6. VCE(ON) vs. Gate Voltage www.irf.com 3 IRGI4085PBF 30 25 Repetitive Peak Current (A) 220 200 180 160 140 120 100 80 60 40 20 ton= 2s Duty cycle <= 0.10 Half Sine Wave IC, Collector Current (A) 20 15 10 5 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Case Temperature (C) Fig 7. Maximum Collector Current vs. Case Temperature 1000 V CC = 240V 900 Energy per Pulse (J) T C, Case Temperature (C) Fig 8. Typical Repetitive Peak Current vs. Case Temperature 1000 V CC = 240V 900 Energy per Pulse (J) L = 220nH C = variable 100C L = 220nH C = variable 100C 800 700 600 500 400 170 180 190 200 210 220 230 240 25C 800 700 600 500 400 170 180 190 200 210 220 230 240 25C IC, Peak Collector Current (A) IC, Peak Collector Current (A) Fig 9. Typical EPULSE vs. Collector Current 1400 V CC = 240V 1200 Energy per Pulse (J) Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage 1000 L = 220nH t = 1s half sine C= 0.4F 100 1msec 1000 800 600 400 200 25 50 75 100 125 150 TJ, Temperature (C) C= 0.3F 10sec 100sec IC (A) 10 C= 0.2F 1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 VCE (V) 100 1000 Fig 11. EPULSE vs. Temperature Fig 12. Forrward Bias Safe Operating Area 4 www.irf.com IRGI4085PBF 100000 VGE, Gate-to-Emitter Voltage (V) VGS = 0V, f = 1 MHZ C ies = C ge + C gd , C ce SHORTED Cres = C gc Coes = Cce + Cgc 16 14 12 10 8 6 4 2 0 IC = 25A V CES = 240V V CES = 150V V CES = 60V 10000 Capacitance (pF) 1000 Cies 100 Coes Cres 10 0 50 100 150 200 VCE, Collector-toEmitter-Voltage(V) 0 20 40 60 80 100 Q G, Total Gate Charge (nC) Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage 10 Thermal Response ( Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) J J 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 C 2 3 4 4 Ri (C/W) 0.14521 0.39603 1.23063 1.51959 i (sec) 0.000104 0.002547 0.171095 2.615 1 Ci= i/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 1 10 100 0.001 1E-006 1E-005 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRGI4085PBF A RG DRIVER L C PULSE A VCC B PULSE B RG Ipulse DUT tST Fig 16a. tst and EPULSE Test Circuit Fig 16b. tst Test Waveforms VCE Energy IC Current 0 L DUT 1K VCC Fig 16c. EPULSE Test Waveforms Fig. 17 - Gate Charge Circuit (turn-off) 6 www.irf.com IRGI4085PBF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information @Y6HQG@) UCDTADTA6IADSAD'#BA XDUCA6TT@H7GA GPUA8P9@A"#"! 6TT@H7G@9APIAXXA!#A! DIAUC@A6TT@H7GAGDI@AAFA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S DSAD'#B !#F A"#AAAAAAAAA"! Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqArrA 96U@A8P9@ @6SA A2A! X@@FA!# GDI@AF TO-220AB Full-Pak package is not recommended for Surface Mount Application. The specifications set forth in this data sheet are the sole and exclusive specifications applicable to the identified product, and no specifications or features are implied whether by industry custom, sampling or otherwise. We qualify our products in accordance with our internal practices and procedures, which by their nature do not include qualification to all possible or even all widely used applications. Without limitation, we have not qualified our product for medical use or applications involving hi-reliability applications. Customers are encouraged to and responsible for qualifying product to their own use and their own application environments, especially where particular features are critical to operational performance or safety. Please contact your IR representative if you have specific design or use requirements or for further information. Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/07 www.irf.com 7 |
Price & Availability of IRGI4085PBF |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |