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Provisional Data Sheet No. PD 9.1291B
HEXFET(R) POWER MOSFET
IRFY430CM
N-CHANNEL
500 Volt, 1.5 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
Product Summary
Part Number IRFY430CM BVDSS 500V RDS(on) 1.5 ID 4.5A
Features
n n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ V GS=10V, TC = 25C ID @ VGS=10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ Tstg Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalance Energy Avalance Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight
IRFY430CM
4.5 2.8 18 75 0.6 20 280 4.5 7.5 3.5 -55 to 150 300 (0.063 in (1.6mm) from case for 10 sec) 4.3 (typical)
Units
A W W/K V mJ A mJ V/ns C C g
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Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min.
500 -- -- -- 2.0 1.5 -- -- -- -- 19.8 2.2 5.5 -- -- -- -- -- --
Typ. Max. Units
-- 0.78 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8.7 8.7 -- -- 1.5 1.8 4.0 -- 25 250 100 -100 29.5 4.6 19.7 35 30 55 30 -- -- V
Test Conditions
VGS = 0V, ID = 1.0mA
V/C Reference to 25C, ID = 1.0mA VGS = 10V, ID = 2.8A VGS = 10V, ID = 4.5A V VDS = VGS, ID = 250A S ( ) VDS 15V, IDS = 2.8A VDS = 0.8 x max. rating,VGS = 0V A VDS = 0.8 x max. rating VGS = 0V, TJ = 25C VGS = 20V nA VGS = -20V VGS = 10V, ID = 4.5A nC VDS = Max. Rating x 0.5 see figures 5 and 13 VDD = 250V, ID = 4.5A, RG = 7.5, VGS = 10V ns see figure 10
Measured from the drain Modified MOSFET symbol lead, 6mm (0.25 in.) from showing the internal package to center of die. inductances. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad.
IGSS IGSS Qg Qgs Qgd t d(on) tr t d(off) tf LD LS
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
nH
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
6.0 135 65
-- -- --
pF
VGS = 0v, V DS = 25V f = 1.0MHz. see figure 5
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR t on Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
-- -- -- -- -- -- -- -- -- -- 4.5 18 1.4 900 7.0 A
Test Conditions
Modified MOSFET symbol showing the integral reverse p-n junction rectifier.
V ns C
Tj = 25C, IS = 4.5A, V GS = 0V Tj = 25C, IF = 4.5A, di/dt 100 A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Junction-to-Case RthJA Junction-to-Ambient RthCS Case-to-Sink
Min. Typ. Max. Units
-- -- -- -- -- 0.21 1.67 80 K/W --
Test Conditions
Typical socket mount Mounting surface flat, smooth
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IRFY430CM Device
Fig. 1 -- Typical Output Characteristics TC = 25C
Fig. 2 -- Typical Output Characteristics TC = 150C
I D = 4.5A
Fig. 3 -- Typical Transfer Characteristics
Fig. 4 -- Normalized On-Resistance Vs. Temperature
ID = 4.5A
Fig. 5 -- Typical Capacitance Vs. Drain-to-Source Voltage
Fig. 6 -- Typical Gate Charge Vs. Gate-to-Source Voltage
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100
OPERAT ION IN THIS AREA LIMITED BY R DS(on)
ID , Drain Current (A)
10
10s
100s
1
1ms
0.1
TC = 25C TJ = 150C Single Pulse
10 100
10ms
A
1000
VDS , Drain-to-Source Voltage (V)
Fig. 7 -- Typical Source-to-Drain Diode Forward Voltage
Fig. 8 -- Maximum Safe Operating Area
5
ID, Drain Current (Amps)
4
3
2
1
0 25 50 75 100 125
A
150
TC , Case Temperature (C)
Fig. 9 -- Maximum Drain Current Vs. Case Temperature
Fig. 10a -- Switching Time Test Circuit
Fig. 10b -- Switching Time Waveforms
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IRFY430CM Device
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10
P DM
0.1
0.05 0.02 0.01 SIN GLE PU LSE (THERMAL RESPONSE)
Notes: 1. Duty factor D = t / t 12 2. Peak TJ = PDMx Z thJC + T C
t1 t2
0.01 0.00001
A
1
0.0001
0.001
0.01
0.1
t 1 , Rectangular Pulse Duration (sec)
Fig. 11 -- Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
VDS
L
DRIVER
tp
V (BR)DSS
RG
D.U.T I AS tp 0.01
+ - VDD
A
I AS
Fig. 12a -- Unclamped Inductive Test Circuit
Fig. 12b -- Unclamped Inductive Waveforms
E AS , Single Pulse Avalanche Energy (mJ)
300
250
200
150
100
50
0
I D = 4.5A V DD = 50V
25 50 75 100 125
A
150
Starting TJ , Junction Temperature (C)
Fig. 12c -- Max. Avalanche Energy vs. Current
Fig. 13a -- Gate Charge Test Circuit
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Repetitive Rating; Pulse width limited by maximum
junction temperature (see figure 11).
@ VDD = 50V, Starting TJ = 25C,
EAS = [0.5 * L * ( ) * [BVDSS/(BVDSS-VDD)] Peak IL = 4.5A, V GS = 10V, 25 RG 200 (figure 12) I SD 4.5A, di/dt 75A/s, VDD BVDSS, TJ 150C Pulse width 300 s; Duty Cycle 2% K/W = C/W W/K = W/C
Fig. 13b -- Basic Gate Charge Waveform
Case Outline and Dimensions -- TO-257AA
Pin 1 - Drain Pin 2 - Source Pin 3 - Gate
3 1 2
TO-257AA
NON-STANDARD PIN CONFIGURATION Pin 1 - Gate Pin 2 - Drain Pin 3 - Source Order Part Type IRFY430C
NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M-1982 2. Controlling dimension: Inch 3. Dimensions are shown in millimeters (Inches) 4. Outline conforms to JEDEC outline TO-257AA
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44(0) 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 9/96
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