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| FGL40N120AN 1200V NPT IGBT FGL40N120AN 1200V NPT IGBT Features * High speed switching * Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A * High input impedance IGBT Description October 2006 (R) Employing NPT technology, Fairchild's AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. C G TO-264 GC E E Absolute Maximum Ratings Symbol VCES VGES IC ICM(1) IF IFM PD SCWT TJ TSTG TL Notes: (1) Pulse width limited by max. junction temperature Parameter Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Short Circuit Withstand Time, VCE = 600V, VGE = 15V, TC = 125 C Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 seconds @TC = 25 C @TC = 100 C @TC = 100 C @TC = 25 C @TC = 100 C FGL40N120AND 1200 25 64 40 120 40 240 500 200 10 -55 to +150 -55 to +150 300 Units V V A A A A A W W s C C C Thermal Characteristics Symbol R R JC(IGBT) JA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --- Max. 0.25 25 Units C/W C/W (c)2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGL40N120AN Rev. A FGL40N120AN 1200V NPT IGBT Package Marking and Ordering Information Device Marking FGL40N120AN Device FGL40N120AN Package TO-264 Reel Size - Tape Width - Quantity 25 Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current TC = 25C unless otherwise noted Parameter Conditions Min. Typ. Max. Units VGE = 0V, IC = 1mA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1200 ---- -0.6 --- --1 250 V V/ C mA nA On Characteristics VGE(th) G-E Threshold Voltage IC = 250 A, VCE = VGE IC = 40A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V, TC = 125 C IC = 64A, VGE = 15V Dynamic Characteristics Cies Coes cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V f = 1MHz ---3200 370 125 ---pF pF pF 3.5 ---5.5 2.6 2.9 3.15 7.5 3.2 --V V V V Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate charge Gate-Emitter Charge Gate-Collector Charge VCE = 600V, IC = 40A, VGE = 15V VCC = 600V, IC = 40A, RG = 5 , VGE = 15V, Inductive Load, TC = 125 C VCC = 600V, IC = 40A, RG = 5 , VGE = 15V, Inductive Load, TC = 25 C -----------------15 20 110 40 2.3 1.1 3.4 20 25 120 45 2.5 1.8 4.3 25 130 220 ---80 3.45 1.65 5.1 -------38 195 330 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC 2 FGL40N120AN Rev. A www.fairchildsemi.com FGL40N120AN 1200V NPT IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 300 Figure 2. Typical Saturation Voltage Characteristics 150 Common Emitter VGE = 15V 120 TC = 25 C TC = 125 C 90 TC = 25 C 250 20V 17V 15V Collector Current, IC [A] 200 12V 150 Collector Current, IC [A] 10 60 100 VGE = 10V 50 30 0 0 2 4 6 8 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level 5 Common Emitter VGE = 15V Figure 4. Load Current vs. Frequency 80 70 60 VCC = 600V Load Current : peak of square wave Collector-Emitter Voltage, VCE [V] 4 80A Load Current [A] 50 40 30 20 10 Duty cycle : 50% TC = 100 C Power Dissipation = 100W 0.1 1 10 100 1000 3 40A 2 IC = 20A 1 25 50 75 100 125 0 Case Temperature, TC [ C] Frequency [kHz] Figure 5. Saturation Voltage vs. VGE 20 Common Emitter TC = 25 C Figure 6. Saturation Voltage vs. VGE 20 Common Emitter TC = 125 C Collector-Emitter Voltage, VCE [V] 16 Collector-Emitter Voltage, VCE [V] 16 12 12 8 8 80A 4 40A IC = 20A 0 0 4 8 12 16 20 80A 4 40A IC = 20A 0 0 4 8 12 16 20 Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V] 3 FGL40N120AN Rev. A www.fairchildsemi.com FGL40N120AN 1200V NPT IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics 6000 Common Emitter VGE = 0V, f = 1MHz 5000 Ciss TC = 25 C (Continued) Figure 8. Turn-On Characteristics vs. Gate Resistance 100 Capacitance [pF] 4000 Switching Time [ns] tr 3000 2000 Coss 1000 Crss td(on) Common Emitter VCC = 600V, VGE = 15V IC = 40A TC = 25 C TC = 125 C 0 1 10 10 0 10 20 30 40 50 60 70 Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [ ] Figure 9. Turn-Off Characteristics vs. Gate Resistance Common Emitter VCC = 600V, VGE = 15V, IC = 40A TC = 25 C TC = 125 C td(off) Figure 10. Switching Loss vs. Gate Resistance 1000 Common Emitter VCC = 600V, VGE = 15V IC = 40A 10 TC = 25 C TC = 125 C Eon 100 Switching Loss [mJ] Switching Time [ns] Eoff tf 1 10 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 Gate Resistance, RG [ ] Gate Resistance, RG [ ] Figure 11. Turn-On Characteristics vs. Collector Current Common Emitter VGE = 15V, RG = 5 100 TC = 25 C TC = 125 C tr Figure 12. Turn-Off Characteristics vs. Collector Current Common Emitter VGE = 15V, RG = 5 TC = 25 C TC = 125 C td(off) Switching Time [ns] Switching Time [ns] 100 tf td(on) 10 20 30 40 50 60 70 80 20 30 40 50 60 70 80 Collector Current, IC [A] Collector Current, IC [A] 4 FGL40N120AN Rev. A www.fairchildsemi.com FGL40N120AN 1200V NPT IGBT Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current Common Emitter VGE = 15V, RG = 5 TC = 125 C Figure 14. Gate Charge Characteristics 16 14 Common Emitter RL = 15 TC = 25 C Gate-Emitter Voltage, VGE [V] 10 TC = 25 C Vcc = 200V 600V Eon 12 10 8 6 4 2 0 Switching Loss [mJ] 400V Eoff 1 0.1 20 30 40 50 60 70 80 0 50 100 150 200 250 Collector Current, IC [A] Gate Charge, Qg [nC] Figure 15. SOA Characteristics Ic MAX (Pulsed) 100 Ic MAX (Continuous) 100 s 50 s Figure 16. Turn-Off SOA 100 Collector Current, Ic [A] 10 DC Operation 1 1ms Collector Current, IC [A] 10 0.1 Single Nonrepetitive Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000 0.01 1 1 10 Safe Operating Area VGE = 15V, TC = 125 C 100 1000 Collector - Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 17. Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.1 0.5 0.2 0.1 0.01 0.05 0.02 0.01 single pulse Pdm Pdm t1 t1 t2 t2 Duty factor D = t1 //t2 Duty factor D = t1 t2 Peak Tj = Pdm Zthjc + TC Peak Tj = Pdm Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] 5 FGL40N120AN Rev. A www.fairchildsemi.com FGL40N120AN 1200V NPT IGBT Mechanical Dimensions TO-264 (4.00) 0.20 20.00 (8.30) 0.20 (1.00) (9.00) (9.00) (11.00) (0.50) 0.20 1.50 (7.00) (7.00) 0.10 4.90 (1.50) 2.50 (2.00) ) 20.00 0.20 (R1 .00 6.00 (8.30) (2.00) (R 0) 2.0 0 o3.3 0.20 0.20 (1.50) 0.50 2.50 (1.50) 0.20 3.00 0.20 +0.25 1.00 -0.10 20.00 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.10 +0.25 2.80 0.30 0.20 0.20 (0.15) (1.50) 5.00 3.50 (2.80) Dimensions in Millimeters 6 FGL40N120AN Rev. A www.fairchildsemi.com FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I22 |
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