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FDPF51N25 28A, 250V N-Channel MOSFET FDPF51N25 28A, 250V N-Channel MOSFET Features * RDS(on) = 0.060 @ VGS = 10 V * Low gate charge ( typical 55 nC) * Low Crss ( typical 63 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability UniFET Description June 2006 TM These N-Channel enhancement mode power field effect transistorsare produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G GDS TO-220F FDPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) FDPF51N25 250 28 16.8 112 30 1111 28 11.7 4.5 117 0.93 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/C C C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Min. --- Max. 1.07 62.5 Unit C/W C/W (c)2006 Fairchild Semiconductor Corporation FDPF51N25 Rev. A 1 www.fairchildsemi.com FDPF51N25 28A, 250V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDPF51N25 Device FDPF51N25 Package TO-220F Reel Size - Tape Width - Quantity 50 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: TC = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250A ID = 250A, Referenced to 25C VDS = 250V, VGS = 0V VDS = 200V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 14A VDS = 40V, ID = 14A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min. 250 -----3.0 ------ Typ. -0.25 -----0.048 43 2620 530 63 62 465 98 130 55 16 27 Max Units --1 10 100 -100 5.0 0.060 -3410 690 90 135 940 205 270 70 --V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 125V, ID = 51A RG = 25 (Note 4, 5) ------(Note 4, 5) VDS = 200V, ID = 51A VGS = 10V -- Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 28A VGS = 0V, IS = 51A dIF/dt =100A/s (Note 4) ------ ---178 4.0 51 204 1.4 --- A A V ns C 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 2.27mH, IAS = 28A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 28A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDPF51N25 Rev. A 2 www.fairchildsemi.com FDPF51N25 28A, 250V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 10 2 ID, Drain Current [A] ID, Drain Current [A] 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 10 2 150 C 10 1 o 10 1 25 C -55 C * Notes : 1. VDS = 40V 2. 250s Pulse Test o o *Notes : 1. 250s Pulse Test o 2. TC = 25 C 10 -1 10 0 10 0 10 1 10 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue RDS(ON) [], Drain-Source On-Resistance 0.14 10 2 0.12 0.10 VGS = 10V IDR, Reverse Drain Current [A] 10 1 0.08 VGS = 20V 0.06 150 C 25 C o o *Notes : 1. VGS = 0V 2. 250s Pulse Test 0.04 0 25 50 75 100 * Note : TJ = 25 C o 10 150 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 125 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 6000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 10 VGS, Gate-Source Voltage [V] VDS = 50V VDS = 125V VDS = 200V Capacitances [pF] 4000 Coss Ciss 8 6 2000 Crss * Note: 1. VGS = 0 V 2. f = 1 MHz 4 2 * Note : ID = 51A 0 -1 10 10 0 10 1 0 0 10 20 30 40 50 60 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FDPF51N25 Rev. A 3 www.fairchildsemi.com FDPF51N25 28A, 250V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature 3.0 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 25.5 A 0.9 * Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 60 10 3 10 2 ID, Drain Current [A] ID, Drain Current [A] 10 1 10 s 100 s 1 ms 10 ms 100 ms DC Operation in This Area is Limited by R DS(on) 50 40 30 10 0 10 -1 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 20 10 10 -2 10 0 10 1 10 2 0 25 50 75 100 o 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve (t), Thermal Response D = 0 .5 10 -1 0 .2 0 .1 0 .0 5 10 -2 PDM t1 t2 M ax. (t) ? JC 0 .0 2 0 .0 1 s in g le p u ls e * N o te s : o 1 . Z JC (t) = 0 .3 9 C /W 3. T JM Z 2 . D u ty F a c to r , D = t1/t2 -T C =P DM *Z JC 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] FDPF51N25 Rev. A 4 www.fairchildsemi.com FDPF51N25 28A, 250V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDPF51N25 Rev. A 5 www.fairchildsemi.com FDPF51N25 28A, 250V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDPF51N25 Rev. A 6 www.fairchildsemi.com FDPF51N25 28A, 250V N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70) 6.68 0.20 15.80 0.20 (1.00x45) MAX1.47 9.75 0.30 0.80 0.10 (3 0 ) 0.35 0.10 2.54TYP [2.54 0.20] #1 2.54TYP [2.54 0.20] 4.70 0.20 0.50 -0.05 +0.10 2.76 0.20 9.40 0.20 FDPF51N25 Rev. A 7 15.87 0.20 www.fairchildsemi.com FDPF51N25 28A, 250V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FAST(R) ACExTM ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM ImpliedDisconnectTM EnSignaTM IntelliMAXTM FACTTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 Preliminary No Identification Needed Full Production Obsolete Not In Production 8 FDPF51N25 Rev. A www.fairchildsemi.com |
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