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| SuperBlueTM LEDs C430CB290-S000 Cree's SuperBlue LEDs combine highly efficient GaN with Cree's proprietary G*SiC(R) substrate to deliver the ultimate price/performance for high-intensity blue LEDs. The C430CB290-S0100 is designed for use in high ambient-light conditions with a typical output of 1150 W and a 465 nm dominant wavelength (at 20 mA). Cree's CB series chips are sorted onto tape and compatible with most radial and SMT LED assembly processes. FEATURES * * * * * High Performance - 1150 W Superior SiC Substrate Technology 465 nm Dominant Wavelength Excellent Chip-to-Chip Consistency High Reliability APPLICATIONS * * * * * Full-Color Displays & Moving Message Signs Solid-State Incandescent Replacement Bulbs High Ambient Panel Indicators Color Printers & Scanners Medical & Analytical Instruments C430CB290-S000 Chip Diagram Top View G*SiC LED Chip 275 x 275 m Mesa (junction) 246 x 246 m Gold Bond Pad 115 m Diameter Bottom View Die Cross Section Anode (+) R3L, Rev. M Datasheet: CP SiC Substrate t = 250 m Backside Metallization Cathode (-) Subject to change without notice. www.cree.com Maximum Ratings at TA = 25C Notes &3 DC Forward Current Peak Forward Current (1/10 duty cycle @ 1kHz) LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Electrostatic Discharge Threshold (HBM) Note 2 Note 2 C430CB290-S000 30 mA 70 mA 125C 5V -40C to +100C -40C to +100C 1000 V Class 2 Note 3 Electrostatic Discharge Classification (MIL-STD-883E) Typical Electrical/Optical Characteristics at TA = 25C, If = 20 mA Part Number Forward Voltage (Vf, V) Typ. C430CB290-S0100 4.0 Max. 4.5 Radiant Flux (P, W) Min. 850 Typ. 1150 Reverse Current [I(Vr=5V), A] Max. 10 Flux (mlm) Typ. 65 Peak Wavelength (d, nm) Typ. 428 Dominant Wavelength (d, nm) Min. 462 Typ. 465 Max. 466 Full Width Half Max (D, nm) Typ. 60 Mechanical Specifications Description P-N Junction Area (m) Top Area (m) Bottom Area (m) Chip Thickness (m) Au Bond Pad Diameter (m) Au Bond Pad Thickness (m) Back Contact Metal Area (m) C430CB290-S000 Dimension 246 x 246 275 x 275 275 x 275 250 115 1.2 20 Tolerance 25 25 25 25 20 0.5 -5, +10t Notes: 1. 2. 3. 4. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325C (<5 seconds). Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an integrating sphere using Illuminance A. Specifications are subject to change without notice. Copyright (c) 1998-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G*SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc. 2 CPR3L Rev. M Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com |
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