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| Rev. 1.0 BSP123 SIPMOS(R) Small-Signal-Transistor Feature * N-Channel * Enhancement mode * Logic Level * dv/dt rated Product Summary VDS RDS(on) ID 100 6 0.37 SOT223 V A Type BSP123 Package SOT223 Ordering Code Q67000-S306 Tape and Reel Information E6327: 1000 pcs/reel Marking BSP123 Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Continuous drain current TA=25C TA=70C Value 0.37 0.3 Unit A ID Pulsed drain current TA=25C ID puls dv/dt VGS Ptot Tj , Tstg 1.48 6 20 Class 1 1.79 -55... +150 55/150/56 W C kV/s V Reverse diode dv/dt IS=0.37A, VDS =80V, di/dt=200A/s, Tjmax=150C Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-02-26 Rev. 1.0 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) BSP123 Symbol min. RthJS RthJA - Values typ. 15 max. 25 Unit K/W 100 51 115 70 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS=0, ID=250A Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) RDS(on) 100 0.8 Values typ. 1.4 max. 1.8 Unit V Gate threshold voltage, VGS = VDS ID=50A Zero gate voltage drain current VDS=100V, VGS=0, T j=25C VDS=100V, VGS=0, T j=150C A 14 4.8 3.5 0.01 5 10 30 10 6 nA Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=2.8V, ID=15mA Drain-source on-state resistance VGS=4.5V, ID=0.3A Drain-source on-state resistance VGS=10V, ID=0.37A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (single layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-02-26 Rev. 1.0 BSP123 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =80V, ID =0.37A, VGS =0 to 10V VDD =80V, ID =0.37A Symbol Conditions min. Values typ. 0.27 56 9 3.5 3.3 3.2 8.7 9.4 max. 70 11.3 4.4 5 4.8 13 14 Unit g fs C iss C oss C rss td(on) tr td(off) tf VDS2*ID*RDS(on)max, ID=0.3A VGS=0, VDS=25V, f=1MHz 0.13 - S pF VDD=50V, VGS=10V, ID=0.37A, RG =6 ns - 0.09 0.8 1.6 3.61 0.13 1.2 2.4 - nC V(plateau) VDD =80V, ID = 0.37 A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsedISM Inverse diode forward voltage VSD Reverse recovery time Reverse recovery charge trr Qrr VGS=0, IF = IS VR=50V, IF =lS , diF/dt=100A/s IS TA=25C - 0.9 52.7 17.8 0.37 1.48 1.2 79 27 A V ns nC Page 3 2003-02-26 Rev. 1.0 1 Power dissipation Ptot = f (TA) 1.9 BSP123 BSP123 2 Drain current ID = f (TA) parameter: VGS 10 V 0.4 BSP123 W 1.6 A 0.32 1.4 0.28 Ptot ID 20 40 60 80 100 120 1.2 1 0.8 0.6 0.4 0.2 0 0 0.24 0.2 0.16 0.12 0.08 0.04 0 0 C 160 20 40 60 80 100 120 C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 C 10 1 BSP123 4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 3 BSP123 K/W A 10 2 tp = 21.0ms ID DS (on ) = V DS /I 10 0 Z thJA 10 1 D R 10 0 D = 0.50 0.20 10 -1 10 -1 0.10 0.05 0.02 10 -2 DC 10 -2 0 10 10 1 0.01 single pulse 10 2 V 10 3 10 -3 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 1 s 10 3 VDS Page 4 tp 2003-02-26 Rev. 1.0 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 C, VGS 0.7 BSP123 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 C, VGS 20 A 0.6 0.55 0.5 ID 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 10V 5V 4.5V 4.1V 3.9V 3.7V 3.5V 3.1V 2.9V 2.3V 16 14 12 10 8 6 4 2 0 0 2.3V 2.9V 3.1V 3.5V 3.7V 3.9V 4.1V 4.5V 5.0V 10V 0.5 1 1.5 2 2.5 3 3.5 4 V RDS(on) 5 0.1 0.2 0.3 0.4 0.5 A 0.7 VDS ID 7 Typ. transfer characteristics ID = f ( VGS ); VDS 2 x ID x RDS(on)max parameter: Tj = 25 C 0.7 8 Typ. forward transconductance gfs = f(ID) parameter: Tj = 25 C 0.4 A S 0.3 0.5 gfs 0.4 0.3 0.2 0.1 0 0 ID 0.25 0.2 0.15 0.1 0.05 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0 0.1 0.2 0.3 0.4 0.5 A 0.7 VGS Page 5 ID 2003-02-26 Rev. 1.0 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 0.37 A, VGS = 10 V 24 BSP123 BSP123 10 Typ. gate threshold voltage VGS(th) = f (Tj ) parameter: VGS = VDS ; ID =50A 2.2 20 V 98% 1.8 RDS(on) VGS(th) 18 16 14 1.6 1.4 1.2 typ. 12 1 10 8 6 4 2 0 -60 -20 20 60 100 C 2% 0.8 98% 0.6 0.4 0.2 180 0 -60 -20 20 typ 60 100 Tj C Tj 160 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz, Tj = 25 C 10 3 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj 10 1 BSP123 pF A 10 2 C Coss 10 1 10 -1 Tj = 25 C typ Crss IF Ciss 10 0 Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 4 8 12 16 20 24 28 V 36 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS Page 6 VSD 2003-02-26 Rev. 1.0 13 Typ. gate charge VGS = f (QG); parameter: V DS , ID = 0.37 A pulsed, Tj = 25 C 16 V BSP123 BSP123 14 Drain-source breakdown voltage V(BR)DSS = f (Tj ) BSP123 120 V 12 V(BR)DSS 0.5 VDS max 0.8 VDS max nC 114 112 110 108 106 104 VGS 10 8 0.2 VDS max 6 102 100 98 96 4 2 94 92 0 0 0.4 0.8 1.2 1.6 2 2.8 90 -60 -20 20 60 100 C 180 QG Tj Page 7 2003-02-26 Rev. 1.0 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSP123 Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2003-02-26 |
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