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2EL2, 2EL3, 2EL4 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright (c) 1998, Power Innovations Limited, UK AUGUST 1998
TELECOMMUNICATION SYSTEM PRIMARY PROTECTION
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Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
V(BR) DEVICE MINIMUM V 2EL2 2EL3 2EL4 245 V(BO) MINIMUM V 265 200 215 V(BO) MAXIMUM V 400 265 265
CELL PACKAGE (SIDE VIEW)
T(A)
R(B)
MD4XANA
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Rated for International Surge Wave Shapes
ITU-T K28 DEVICE (10/700) ITSP A 2EL2 2EL3 2EL4 125 125 125 GR-974-CORE (10/1000) ITSP A 100 100 100
device symbol
T
SD4XAA
R Terminals T and R correspond to the alternative line designators of A and B
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Gas Discharge Tube (GDT) Replacement
Planar Passivated Junctions in a Protected Cell Construction Low Off-State Current Extended Service Life Soldered Copper Electrodes High Current Capability Cell Construction Short Circuits Under Excessive Current Conditions
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description
These devices are primary protector components for semiconductor arrester assemblies intended to meet the generic requirements of Bellcore GR-974-CORE (November 1994) or ITU-T Recommendation K28 (03/93). To conform to the specified environmental requirements, the 2ELx must be installed in a housing which maintains a stable microclimate during these tests (e.g. FIGURE I.1/K28). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. This 2ELx range consists of three voltage variants to meet various maximum system voltage levels. They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These monolithic protection devices are constructed using two nickel plated copper electrodes soldered to each side of the silicon chip. This packaging approach allows heat to be removed from both sides of the silicon, resulting in the doubling of the devices thermal capacity, enabling a power line cross current capability of 10 A rms for 1 second. One of the 2ELx's copper electrodes is specially shaped to promote a progressive shorting action (at 50/60 Hz currents greater than 60 A). The assembly must hold the 2ELx in compression, so that the cell electrodes can be forced together during overstress testing. Under excessive power line cross conditions the 2ELx will fail short circuit, providing maximum protection to the equipment.
PRODUCT
INFORMATION
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Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. Manufactured by TI using silicon designed and manufactured by Power Innovations, Bedford, UK.
2EL2, 2EL3, 2EL4 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
AUGUST 1998
absolute maximum ratings, TA = 25C (unless otherwise noted)
RATING Non-repetitive peak on-state pulse current (see Notes 1 and 2) 5/310 s (ITU-T K28, 10/700 s voltage wave shape) 2EL2 2EL3 2EL4 10/1000 s (GR-974-CORE, 10/1000 s voltage wave shape) 2EL2 2EL3 2EL4 Non-repetitive peak on-state current (see Note 1) full sine wave, 50/60 Hz, 1 s 2EL2 2EL3 2EL4 Junction temperature Storage temperature range -40C to 65C -20C to 65C -40C to 65C TJ Tstg ITSM 10 10 10 -40 to +150 -40 to +150 C C A rms -20C to 65C -20C to 65C -20C to 65C -20C to 65C -20C to 65C -20C to 65C ITSP 125 125 125 100 100 100 A SYMBOL VALUE UNIT
NOTES: 1. The surge may be repeated after the device has returned to thermal equilibrium. 2. Most PTT's quote an unloaded voltage waveform. In operation the 2ELx essentially shorts the generator output. The resulting loaded current waveform is specified.
electrical characteristics for the T and R terminals, TA = 25C (unless otherwise noted)
PARAMETER V(BR) Breakdown Voltage TEST CONDITIONS I(BR) = 20 mA, (see Note 3) 2EL2 2EL2 V(BO) Breakover voltage dv/dt = 0.2 V/s, RSOURCE > 200 2EL3 2EL4 V(BO) Impulse breakover voltage 100 V/s dv/dt 1000 V/s, di/dt 10 A/s Sources are 52.5 V O.C., 260 mA S.C. and Impulse reset 135 V O.C., 200 mA S.C. on-state current 25 A, 10/1000 s impulse VD = 50 V (see Note 4) 2EL2 2EL3 2EL4 2EL2 2EL3 2EL4 2EL2 2EL3 ID Off-state current 2EL4 VD = 200 V 2EL2 2EL3 2EL4 f = 1 MHz, Coff Off-state capacitance Vd = 1 Vrms, VD = 0, 2EL2 2EL3 2EL4 -40C to 65C +15C to 25C -40C to 65C +15C to 25C -20C to 65C 25C -20C to 65C -20C to 65C -20C to 65C -20C to 65C -20C to 65C -20C to 65C -40C to 65C -20C to 65C -40C to 65C -40C to 65C 15C to 25C 0C to 65C -40C to 65C -20C to 65C -40C to 65C 215 200 265 265 400 350 350 20 20 20 0.5 0.5 0.5 10 1 10 150 150 150 pF A ms V MIN 245 265 400 V TYP MAX UNIT V
NOTES: 3. Meets Bellcore GR-974-CORE Issue 1, November 1994 - Rated Voltage Test (4.7) 4. This device is sensitive to light. Suggest that this parameter be measured in a dark environment
PRODUCT
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INFORMATION
2EL2, 2EL3, 2EL4 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
AUGUST 1998
PARAMETER MEASUREMENT INFORMATION
+i ITSP Quadrant I Switching Characteristic
ITSM
V(BO)
-v I(BR) V(BR)
VD
ID ID VD
V(BR) I(BR) +v
V(BO)
ITSM Quadrant III Switching Characteristic ITSP -i
PMXXAG
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL
PRODUCT
INFORMATION
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2EL2, 2EL3, 2EL4 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
AUGUST 1998
MECHANICAL DATA cell package
BUTTON CELL 2ELx
0,508 (0.020) MAX
Top Electrode
2,31 (0.091) 2,11 (0.083)
Sleeve Bidirectional Silicon Chip 0,178 (0.007) MAX Bottom Electrode
2xo
1,65 (0.065) 1,27 (0.050)
o
4,27 (0.168) 3,76 (0.148)
ALL LINEAR DIMENSIONS IN MILLIMETERS AND PARENTHETICALLY IN INCHES MDXXAK
PRODUCT
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INFORMATION
2EL2, 2EL3, 2EL4 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
AUGUST 1998
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilised to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. PI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORISED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright (c) 1998, Power Innovations Limited
PRODUCT
INFORMATION
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