View FDS4672A07_1182573.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FDS4672A
February 2007
FDS4672A
40V N-Channel PowerTrench(R) MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
tm
Features
* 11 A, 40 V. RDS(ON) = 13 m @ VGS = 4.5 V
* High performance trench technology for extremely low RDS(ON) * Low gate charge (35 nC typical) * High power and current handling capability * RoHS Compliant
Applications
* DC/DC converter
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID EAS PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Single Pulse Avalanche Energy
TA=25 C unless otherwise noted
o
Parameter
Ratings
40 12
(Note 1a)
Units
V V A mJ W
11 50 181 2.5 1.4 1.2 -55 to +175
(Note 3)
(Note 1a) (Note 1b) (Note 1c)
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
C/W C/W
Package Marking and Ordering Information
Device Marking FDS4672A Device FDS4672A Reel Size 13'' Tape width 12mm Quantity 2500 units
(c)2007 Fairchild Semiconductor Corporation
FDS4672A Rev C1 (W)
FDS4672A
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 32 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = -12 V VDS = 0 V VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 11 A VGS=4.5 V, ID =11A, TJ=125C VGS = 4.5 V, VDS = 5 V VDS = 5 V, ID = 11 A
Min
40
Typ
Max Units
V
Off Characteristics
37 1 100 -100 mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on) ID(on) gFS
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
0.8
1.2 -4 10 15
2.0
V mV/C
13 21
m A
50 65
S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 20 V, V GS = 0 V, f = 1.0 MHz
4766 346 155
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 20 V, ID = 1 A, VGS = 4.5 V, RGEN = 6
17 9 43 14
31 18 68 25 49
ns ns ns ns nC nC nC
VDS = 20 V, ID = 11 A, VGS = 4.5 V
35 7.8 8.8
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 2.1 A Voltage 2.1
(Note 2)
A V
0.7
1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50C/W when mounted on a 1in2 pad of 2 oz copper
b) 105C/W when mounted on a .04 in2 pad of 2 oz copper
c) 125C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3.Starting TJ = 25 C, L = 3mH,ID = 11A, VDD = 40V, VGS = 10V
o
FDS4672A Rev C1 (W)
FDS4672A
Typical Characteristics
50
VGS = 4.5V 3.5V
ID, DRAIN CURRENT (A) 40
1.6 2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3.0V
30
1.4 VGS = 2.5V
1.2 3.0V 3.5V 1 4.0V 4.5V
20
2.0V
10
0 0 0.5 1 1.5 2 VDS, DRAIN TO SOURCE VOLTAGE (V)
0.8 0 10 20 30 40 50 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.03 RDS(ON), ON-RESISTANCE (OHM)
2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100
o
ID = 11A VGS = 4.5V
ID = 5.5A
0.026 0.022
TA = 125oC
0.018 0.014
TA = 25oC
0.01 0.006
125
150
175
1.5
2
2.5
3
3.5
4
4.5
5
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
70 60 ID, DRAIN CURRENT (A) 50 40 30 20 10 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) VDS = 5V TA = -55 C
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
25 C 125 C
o
o
VGS = 0V 10 TA = 125 C 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V)
o
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS4672A Rev C1 (W)
FDS4672A
Typical Characteristics
5 VGS, GATE-SOURCE VOLTAGE (V) ID = 11A 4 30V 3
CAPACITANCE (pF)
7000
VDS = 10V
20V
5600
f = 1 MHz VGS = 0 V CISS
4200
2
2800
1
1400
COSS CRSS
0 0 10 20 Qg, GATE CHARGE (nC) 30 40
0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 100s ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10
IAS, AVALANCHE CURRENT (A) 100
Figure 8. Capacitance Characteristics.
1ms 10ms 100ms 1s 10s DC
1 VGS = 4.5V SINGLE PULSE o RJA = 125 C/W TA = 25 C 0.01 0.01
o
10
25
0.1
125
0.1
1
10
100
1 0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
tAV, TIME IN AVALANCHE (mS)
Figure 9. Maximum Safe Operating Area.
Figure 10. Unclamped Inductive Switching Capability.
P(pk),PEAK TRANSIENT POWER (W)
50
40
30
SINGLE PULSE RJA = 125C/W TA = 25C
20
10
0 0.001
0.01
0.1 t1, TIME (sec)
1
10
100
Figure 11 Single Pulse Maximum Power Dissipation.
FDS4672A Rev C1 (W)
FDS4672A
Typical Characteristics
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) + RJA RJA = 125 C/W P(pk) t1 t2
SINGLE PULSE
o
0.1
0.1 0.05 0.02 0.01
0.01
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 12. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
.
FDS4672A Rev C1 (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I22
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production

▲Up To Search▲

Price & Availability of FDS4672A07

	To Download FDS4672A07 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .