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PD - 94396
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
120LQ100
120 A, 100V
Major Ratings and Characteristics
Description/Features The 120LQ100 Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic surface mount SMD-1 ceramic package. The device's forward voltage drop and reverse leakage current are optimized for the lowest power loss and the highest circuit efficiency for typical high frequency switching power supplies and resonent power converters. Full MIL-PRF-19500 quality conformance testing is available on source control drawings to TX, TXV and S quality levels. Hermetically Sealed Low Forward Voltage Drop High Frequency Operation Guard Ring for Enhanced Ruggedness and Long term Reliability * Surface Mount * Lightweight * * * *
Characteristics IF(AV) VRRM IFSM @ tp = 8.3ms half-sine VF @ 120Apk, TJ =125C
120LQ100 120
Units A
100 1000 0.74
V A V
TJ,TstgOperating and storage -55 to 150
C
CASE STYLE
Case Outline and Dimensions - SMD-1
CATHODE ANODE ANODE
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03/15/02
120LQ100
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V)
120LQ100 100
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current See Fig. 5 IFSM Max. Peak One Cycle Non - Repetitive Surge Current 1000 A @ tp = 8.3 ms half-sine
Limits
120
Units
A
Conditions
50% duty cycle @ TC = 58C, square waveform
Electrical Specifications
Parameters
V FM Max. Forward Voltage Drop See Fig. 1Q
Limits
0.64 0.74 0.92 0.62 0.75 0.94 0.53 0.62 0.74
Units
V V V V V V V V V @ 30A @ 60A @ 120A @ 30A @ 60A @ 120A @ 30A @ 60A @ 120A TJ = 25C TJ = 100C TJ = 125C
Conditions
TJ = -55C R
TJ = 25CR
TJ = 125C R
I RM
Max. Reverse Leakage Current See Fig. 2Q
60 15 60
A
mA mA pF nH
VR = rated VR R
CT LS
Max. Junction Capacitance Typical Series Inductance
2616 5.9
VR = 5VDC ( 1MHz, 25C ) R Measured from center of cathode pad to center of anode pad
Thermal-Mechanical Specifications
Parameters
TJ Tstg Max.Junction Temperature Range Max. Storage Temperature Range to Case wt Weight (Typical) Die Size Case Style Q Pulse Width < 300s, Duty Cycle < 2% R Pins 2 and 3 externally tied together 2.6 275X275 SMD-1 g mils
Limits Units
-55 to 150 -55 to 150 0.8 C C C/W DC operation
Conditions
RthJC Max. Thermal Resistance, Junction
See Fig. 4
2
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120LQ100
100
125C
Reverse Current - I R ( mA )
10
100C
1
75C
1000
0.1
25C
0.01
0.001 0 20 40 60 80 100
Instantaneous Forward Current - I F (A)
100
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage
Tj = 125C 10 Tj = 25C Tj = -55C
10000
Junction Capacitance - C T (pF)
T J = 25C
1000
1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Forward Voltage Drop - V F (V)
100
Fig. 1 - Max. Forward Voltage Drop Characteristics
0
20
40
60
80
100
Reverse Voltage -V R (V)
Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
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120LQ100
1
Thermal Response (Z thJC )
D = 0.50
0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.001 0.01 1
PDM t1 t2
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
180 160
120LQ100
R thJC = 0.8C/W
Allowable Case Temprature - (C)
140 120
DC
100 80 60 40 20 0 0 20 40 60 80 100 120 140
Average Forward Current - I F(AV) (A)
Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/02
4
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