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| VCES Low VCE(sat) High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient T C = 25C T C = 90C T C = 25C, 1 ms V GE = 15 V, TVJ = 125C, RG = 33 Clamped inductive load, L = 100 H T C = 25C Maximum Ratings 1000 1000 20 30 50 25 100 ICM = 50 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C TO-247 AD (IXGH) G C E TO-204 AE (IXGM) C G = Gate, E = Emitter, C = Collector, TAB = Collector Mounting torque (M3) 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25C TJ = 125C 5 250 1 100 25N100 25N100A 3.5 4.0 V V A mA nA V V Features International standard packages 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125C) l l l l l l BVCES VGE(th) I CES I GES VCE(sat) IC IC = 3 mA, VGE = 0 V = 250 A, VCE = VGE V CE = 0.8 * VCES V GE = 0 V V CE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies l l l l l l l Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density (c) 1996 IXYS All rights reserved 91516E (3/96) IXGH 25N100 IXGH 25N100A Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 8 15 2750 VCE = 25 V, VGE = 0 V, f = 1 MHz 200 50 130 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 300 H, VCE = 0.8 V CES, RG = Roff = 33 Remarks: Switching times may increase 25N100A for VCE (Clamp) > 0.8 * V CES, 25N100A higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 300 H VCE = 0.8 V CES, RG = Roff = 33 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES , higher TJ or increased RG 25N100 25N100A 25N100 25N100A 25 55 100 200 500 500 5 100 250 3.5 720 950 800 10 8 1000 3000 1500 180 60 90 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns ns mJ mJ 0.62 K/W 0.25 K/W IXGM 25N100 IXGM 25N100A TO-247 AD Outline gfs Cies C oes C res Qg Q ge Q gc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % 1 = Gate 2 = Collector 3 = Emitter Tab = Collector TO-204AE Outline 1 = Gate 2 = Emitter Case = Collector IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGH 25N100 IXGH 25N100A IXGM 25N100 IXGM 25N100A Fig. 1 Saturation Characteristics 50 45 40 35 30 25 20 15 10 5 0 7V TJ = 25C VG E= 15V 13V 11V Fig. 2 Output Characterstics 200 9V VGE = 15V 13V 180 160 140 120 100 80 60 40 20 0 TJ = 25C IC - Amperes IC - Amperes 11V 9V 7V 0 1 2 3 4 5 0 2 4 6 8 10 12 14 16 18 20 VCE - Volts VCE - Volts Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 9 8 7 TJ = 25C Fig. 4 Temperature Dependence of Output Saturation Voltage 1.5 1.4 IC = 50A VCE(sat) - Normalized 1.3 1.2 1.1 1.0 0.9 0.8 IC = 12.5A IC = 25A VCE - Volts 6 5 4 3 2 1 0 6 7 8 9 IC = 12.5A IC = 50A IC = 25A 10 11 12 13 14 15 0.7 -50 -25 0 25 50 75 100 125 150 VGE - Volts TJ - Degrees C Fig. 5 Input Admittance 50 VCE = 10V Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 VGE(th) IC = 250A BV / V(th) - Normalized 40 1.1 1.0 0.9 0.8 0.7 0.6 -50 IC - Amperes 30 20 TJ = 25C BV CES IC = 250A 10 TJ = 125C TJ = - 40C 0 0 1 2 3 4 5 6 7 8 9 10 -25 0 25 50 75 100 125 150 VGE - Volts 25N100g1.JNB TJ - Degrees C (c) 1996 IXYS All rights reserved IXGH 25N100 IXGH 25N100A IXGM 25N100 IXGM 25N100A Fig.7 Gate Charge 15 13 11 100 Fig.8 Turn-Off Safe Operating Area VCE = 800V IC = 25A IG = 10mA 10 IC - Amperes T J = 125C dV/dt < 3V/ns VGE - Volts 9 7 5 3 1 1 0.1 0.01 0 25 50 75 100 125 150 0 200 400 600 800 1000 Gate Charge - nCoulombs V CE - Volts Fig.9 Capacitance Curves 2400 f = 1MHz Cies Capacitance - pF 2000 1600 1200 800 400 0 0 5 25N100g2.JNB Coes Cres 10 15 20 25 V CE - Volts Fig.10 Transient Thermal Impedance 1 D=0.5 Zthjc (K/W) D=0.2 0.1 D=0.1 D=0.05 D=0.02 D=0.01 Single Pulse D = Duty Cycle 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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