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| PROCESS Low Leakage Diode CPD71 Central TM Low Leakage Switching Diode Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 11 x 11 MILS 11 MILS 3.3 x 3.3 MILS Al - 15,000A Au - 18,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 94,130 PRINCIPAL DEVICE TYPES CMPD6001 BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) Central TM PROCESS CPD71 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) |
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