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APTM20DHM16TG
Asymmetrical - Bridge MOSFET Power Module
VBUS VBUS SENSE Q1 CR3
VDSS = 200V RDSon = 16m typ @ Tj = 25C ID = 104A @ Tc = 25C
Application * * * Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives
G1 S1 O UT1 OUT2 Q4
Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
CR2 G4 0/VBUS SENSE S4 0/VBUS NTC2
NTC1
* * * *
VBUS SENSE
G4 S4
OUT2
Benefits * * * * * * Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Max ratings 200 104 77 416 30 19 390 104 50 3000 Unit V A V m W A mJ
July, 2006 1-6 APTM20DHM16TG - Rev 3
VBUS
0/VBUS
OUT1
S1 G1
0/VBUS SENSE
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM20DHM16TG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V
Typ
Tj = 25C Tj = 125C 16 3
VGS = 10V, ID = 52A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
Max 250 1000 19 5 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID =104A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 104A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 104A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 104A, R G = 5
Min
Typ 7220 2330 146 140 53 67 32 64 88 116 849 929 936 986
Max
Unit pF
nC
ns
J
J
Diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Test Conditions VR=200V IF = 100A IF = 200A IF = 100A IF = 100A VR = 133V
di/dt = 200A/s
Min 200 Tj = 25C Tj = 125C
T c = 80C
Typ
Max 250 500
Unit V A A
100 1 1.4 0.9 110 200 840 60
1.1 V
July, 2006 2-6 APTM20DHM16TG - Rev 3
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
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APTM20DHM16TG
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.32 0.55 150 125 100 4.7 160 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
Typ 50 3952
Max
Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
SP4 Package outline (dimensions in mm)
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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3-6
APTM20DHM16TG - Rev 3
July, 2006
APTM20DHM16TG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 Single Pulse 0.9 0.7 0.5
0.05 0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics
V GS=15V
700 600 ID, Drain Current (A) 500 400 300 200 100 0
Transfert Characteristics 300 ID, Drain Current (A) 250 200 150 100 50 0
TJ=25C T J=125C TJ=-55C V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
10V 9V 8.5V 8V 7.5V 7V 6.5V
0
4
8
12
16
20
24
28
0
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A)
Normalized to V GS=10V @ 52A
1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 120 100 80 60 40 20 0
1.1 1
VGS=10V
VGS=20V
0.9 0.8 0 25 50 75 100 125 150 ID, Drain Current (A)
25
50
75
100
125
150
July, 2006 4-6 APTM20DHM16TG - Rev 3
TC, Case Temperature (C)
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APTM20DHM16TG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 1000
limited by RDSon
VGS=10V ID= 52A
100
100s
10
1ms
Single pulse TJ=150C TC=25C 1
10ms 100ms
1 10 100 1000 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 14 I D=104A V DS=40V 12 TJ =25C 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC)
July, 2006
VDS=100V
10000
Ciss Coss
VDS=160V
1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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5-6
APTM20DHM16TG - Rev 3
APTM20DHM16TG
Delay Times vs Current 120 100 t d(on) and td(off) (ns) 80 60 40 20 0 0 25 50 75 100 125 150 175 I D, Drain Current (A)
VDS=133V RG=5 T J=125C L=100H
Rise and Fall times vs Current 160 140
V DS=133V R G=5 T J=125C L=100H
t d(off) tr and tf (ns)
120 100 80 60 40 20 0 0
tf
t d(on)
tr
25
50 75 100 125 150 175 ID, Drain Current (A)
Switching Energy vs Current 2 Switching Energy (mJ) 1.5 1 0.5 Eoff 0 0 25 50 75 100 125 150 175 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 300 250 Frequency (kHz) 200 150 100 50 0 25 38 50 63 75 88 100 I D, Drain Current (A)
VDS=133V D=50% RG=5 TJ=125C TC=75C ZCS ZVS VDS=133V RG=5 T J=125C L=100H
Switching Energy vs Gate Resistance 3
VDS=133V ID=104A T J=125C L=100H
Eoff Eon
Eon and Eoff (mJ)
2.5 2 1.5 1 0.5 0
Eoff
Eon
5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage 1000 TJ =150C
100
TJ =25C 10
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
July, 2006
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6-6
APTM20DHM16TG - Rev 3
Microsemi reserves the right to change, without notice, the specifications and information contained herein

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