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TYPICAL PERFORMANCE CURVES (R) APT40GP90B2DQ2 APT40GP90B2DQ2G* APT40GP90B2DQ2(G) 900V *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT (R) T-Max(R) The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff * SSOA Rated G C E C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 7 All Ratings: TC = 25C unless otherwise specified. APT40GP90B2DQ2(G) UNIT Volts 900 30 @ TC = 25C 101 50 160 160A @ 900V 543 -55 to 150 300 Watts C Amps Continuous Collector Current @ TC = 110C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units 900 3 4.5 3.2 2.7 350 2 6 3.9 Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125C) Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 25C) 2 Volts I CES I GES A nA 9-2005 050-7491 Rev A Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) 1500 100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT40GP90B2DQ2(G) Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 450V I C = 40A TJ = 150C, R G = 4.3, VGE = 15V, L = 100H,VCE = 900V Inductive Switching (25C) VCC = 600V VGE = 15V RG = 4.3 I C = 40A VGE = 15V MIN TYP MAX UNIT pF V nC 3300 325 35 7.5 145 22 55 160 14 23 90 60 TBD 1350 795 14 23 130 90 TBD 2280 1245 J ns ns A Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 44 55 4 5 Turn-on Switching Energy (Diode) 6 TJ = +25C Inductive Switching (125C) VCC = 600V VGE = 15V RG = 4.3 I C = 40A J Turn-on Switching Energy (Diode) 6 TJ = +125C THERMAL AND MECHANICAL CHARACTERISTICS Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm .23 .61 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 9-2005 Rev A 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature. APT Reserves the right to change, without notice, the specifications and information contained h 050-7491 TYPICAL PERFORMANCE CURVES 160 140 IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 0 0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 250s PULSE TEST<0.5 % DUTY CYCLE 160 140 IC, COLLECTOR CURRENT (A) APT40GP90B2DQ2(G) TJ = -55C 120 100 80 60 40 20 0 TJ = -55C TJ = 25C TJ = 125C TJ = 25C TJ = 125C 200 180 IC, COLLECTOR CURRENT (A) 160 140 120 100 FIGURE 1, Output Characteristics(TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V) 16 14 12 10 FIGURE 2, Output Characteristics (TJ = 125C) I = 40A C T = 25C J 0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) VCE = 180V VCE = 450V 8 6 4 2 0 0 20 40 60 80 100 120 140 160 GATE CHARGE (nC) FIGURE 4, Gate Charge 80 60 40 20 0 0 TJ = -55C TJ = 25C TJ = 125C 2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE VCE = 720V VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC = 80A 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 5 5.0 4.0 IC = 80A IC = 40A IC = 40A 3 3.0 IC = 20A 2 2.0 IC = 20A 1 1.0 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10 0 6 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 140 0 -50 BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) 1.05 IC, DC COLLECTOR CURRENT(A) 120 100 80 60 40 20 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 9-2005 050-7491 Rev A Lead Temperature Limited 1.00 0.95 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature 0.90 -50 20 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 140 120 100 80 60 40 20 VCE = 600V RG = 4.3 VGE =15V,TJ=25C VGE =15V,TJ=125C APT40GP90B2DQ2(G) 15 VGE = 15V 10 5 100 80 60 40 20 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 0 0 VCE = 600V TJ = 25C or 125C RG = 4.3 L = 100H 100 80 60 40 20 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 0 0 L = 100H 70 60 50 40 30 20 10 RG = 4.3, L = 100H, VCE = 600V 120 100 tf, FALL TIME (ns) 80 60 40 RG = 4.3, L = 100H, VCE = 600V TJ = 125C, VGE = 15V tr, RISE TIME (ns) TJ = 25C, VGE = 15V 20 TJ = 25 or 125C,VGE = 15V 100 80 60 40 20 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 0 100 80 60 40 20 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 0 6000 EON2, TURN ON ENERGY LOSS (J) 5000 4000 3000 2000 1000 0 EOFF, TURN OFF ENERGY LOSS (J) V = 600V CE V = +15V GE R = 4.3 G 3500 3000 2500 2000 1500 1000 500 0 = 600V V CE = +15V V GE R = 4.3 G TJ = 125C TJ = 125C TJ = 25C TJ = 25C 100 80 60 40 20 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 100 80 60 40 20 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 8000 SWITCHING ENERGY LOSSES (J) 7000 6000 5000 4000 3000 2000 1000 J SWITCHING ENERGY LOSSES (J) = 600V V CE = +15V V GE T = 125C Eon2,80A 6000 5000 4000 3000 2000 = 600V V CE = +15V V GE R = 4.3 G Eon2,80A Eoff,80A Eoff,80A Eon2,40A 9-2005 Eoff,40A Eoff,20A Eon2,20A Eon2,40A Eoff,40A Eon2,20A Rev A 1000 0 Eoff,20A 050-7491 50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 0 125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 TYPICAL PERFORMANCE CURVES 7,000 Cies IC, COLLECTOR CURRENT (A) 180 160 140 120 100 80 60 40 20 APT40GP90B2DQ2(G) C, CAPACITANCE ( F) P 1,000 500 Coes 100 50 Cres 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 200 400 600 800 1000 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0 0.25 D = 0.9 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE Note: ZJC, THERMAL IMPEDANCE (C/W) PDM t1 t2 Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 300 FMAX, OPERATING FREQUENCY (kHz) 100 50 RC MODEL Junction temp (C) 0.0896 Power (watts) 0.140 Case temperature(C) 0.228 0.0108 F = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf max T = 125C J T = 75C C D = 50 % V = 600V CE R = 4.3 G fmax2 = Pdiss = 10 5 Pdiss - Pcond Eon2 + Eoff TJ - TC RJC FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL 30 40 50 60 70 80 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 10 20 050-7491 Rev A 9-2005 APT40GP90B2DQ2(G) APT40DQ100 10% td(on) Gate Voltage TJ = 125C V CC IC V CE tr Collector Current 90% 5% 10% 5% CollectorVoltage A D.U.T. Switching Energy Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions 90% Gate Voltage TJ = 125C td(off) 90% tf 10% CollectorVoltage 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions T-MAX(R) (B2) Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Collector (Cathode) 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) Rev A 9-2005 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) Gate Collector (Cathode) Emitter (Anode) 5.45 (.215) BSC 2-Plcs. 050-7491 Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. TYPICAL PERFORMANCE CURVES APT40GP90B2DQ2(G) ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 106C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 40A Forward Voltage IF = 80A IF = 40A, TJ = 125C MIN All Ratings: TC = 25C unless otherwise specified. APT40GP90B2DQ2 UNIT Amps 40 60 210 TYP MAX UNIT Volts STATIC ELECTRICAL CHARACTERISTICS 2.5 3.08 1.97 MIN TYP MAX UNIT ns nC DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current 0.70 ZJC, THERMAL IMPEDANCE (C/W) 0.60 0.50 0.40 0.5 0.30 0.20 0.10 0 10-5 0.3 0.1 0.05 10-4 Note: 24 240 300 3 300 1430 8 145 2520 28 - IF = 40A, diF/dt = -200A/s VR = 667V, TC = 25C - Amps ns nC Amps ns nC Amps IF = 40A, diF/dt = -200A/s VR = 667V, TC = 125C IF = 40A, diF/dt = -1000A/s VR = 667V, TC = 125C D = 0.9 0.7 PDM t1 t2 SINGLE PULSE Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL Junction temp (C) 0.0544 0.000276 Power (watts) 0.129 0.0168 Case temperature (C) FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL 050-7491 0.426 0.379 Rev A 9-2005 120 100 80 TJ = 175C 60 TJ = 125C 40 TJ = 25C 20 0 TJ = -55C 0 trr, REVERSE RECOVERY TIME (ns) 400 350 300 250 200 150 100 50 80A 40A APT40GP90B2DQ2(G) T = 125C J V = 667V R IF, FORWARD CURRENT (A) 20A 1.0 2.0 3.0 4.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 4000 Qrr, REVERSE RECOVERY CHARGE (nC) 3500 3000 2500 2000 1500 1000 500 0 20A 40A T = 125C J V = 667V R 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 35 30 25 20 15 10 5 0 T = 125C J V = 667V R 0 80A 80A 40A 20A 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 0.8 0.6 0.4 0.2 0.0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 70 60 50 IF(AV) (A) 40 30 20 10 Duty cycle = 0.5 T = 175C J Qrr trr trr IRRM Qrr 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature 160 CJ, JUNCTION CAPACITANCE (pF) 140 120 100 80 60 40 20 0 75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature 0 25 50 Rev A 9-2005 050-7491 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 0 1 TYPICAL PERFORMANCE CURVES +18V 0V diF /dt Adjust Vr APT10035LLL APT40GP90B2DQ2(G) D.U.T. 30H trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 32. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 0.25 IRRM 5 Figure 33, Diode Reverse Recovery Waveform and Definitions T-MAX(R) (B2) Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Collector 20.80 (.819) 21.46 (.845) 0.40 (.016) 0.79 (.031) 4.50 (.177) Max. 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-7491 Dimensions in Millimeters and (Inches) Rev A 9-2005 19.81 (.780) 20.32 (.800) Gate Collector Emitte |
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