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APM7320K
Dual N-Channel Enhancement Mode MOSFET
Features
*
20V/10A, RDS(ON) =10m(typ.) @ VGS =4.5V RDS(ON) =18m(typ.) @ VGS =2.5V
Pin Description
D1 D1 D2 D2
* * *
Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
S1 G1 S2 G2
Top View of SOP - 8
(8) D1 (7) D1 (6) D2 (5) D2
Applications
*
Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
(2) G1
(4) G2
S1 (1)
S2 (3)
N-Channel MOSFET
Ordering and Marking Information
APM 7320 Lead Free Code Handling Code Tem p. Range Package Code Package Code K : SO P-8 Operating Junction Tem p. Range C : -55 to 150C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : O riginal Device XXXXX - Date Code
APM 7320 K :
APM 7320 XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www.anpec.com.tw
APM7320K
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RJA*
Note: *Surface Mounted on 1in pad area, t 10sec.
2
(TA = 25C unless otherwise noted)
Rating 20 16 10 VGS=4.5V 40 2.3 150 -55 to 150 TA=25C TA=100C 2 0.8 62.5 W C/W V A A C Unit
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300s Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient
Electrical Characteristics
Symbol Parameter
(TA = 25C unless otherwise noted)
APM7320K Min. Typ. Max.
Test Condition
Unit
Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) VSD
a a
VGS=0V, IDS=250A VDS=18V, VGS=0V TJ=85C VDS=VGS, IDS=250A VGS=16V, VDS=0V VGS=4.5V, IDS=10A VGS=2.5V, IDS=5A ISD=2.3A, VGS=0V
20 1 30 0.7 0.9 10 18 0.7 1.5 100 13 24 1.3
V A V nA m V
Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
b
Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge
18 VDS=10V, VGS=4.5V, IDS=10A 5.6 4.8
23 nC
Gate-Source Charge
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
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APM7320K
Electrical Characteristics (Cont.)
Symbol Parameter
b
(TA = 25C unless otherwise noted)
APM7320K Min. Typ. Max.
Test Condition
Unit
Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf
Notes:
VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz
2.4 1290 300 210 35 70 160 235 85 80 115 40
pF
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
VDD=10V, RL=10, IDS=1A, VGEN=4.5V, RG=6
ns
a : Pulse test ; pulse width300s, duty cycle2%. b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
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APM7320K
Typical Characteristics
Power Dissipation
2.5 12
Drain Current
2.0
10
ID - Drain Current (A)
Ptot - Power (W)
8
1.5
6
1.0
4
0.5
2 TA=25 C 0 20 40 60 80 100 120 140 160
o
0.0
0
TA=25 C,VG=4.5V 0 20 40 60 80 100 120 140 160
o
Tj - Junction Temperature (C)
Tj - Junction Temperature (C)
Safe Operation Area
Normalized Transient Thermal Resistance
100 2 1
Thermal Transient Impedance
im
it
ID - Drain Current (A)
Rd
10
s(
on )L
1ms
Duty = 0.5 0.2
10ms
0.1
0.1 0.05 0.02 0.01
1
100ms
1s
0.01
0.1
DC
Single Pulse
0.01 0.01
TA=25 C 0.1 1 10 100
o
1E-3 1E-4
Mounted on 1in pad o RJA : 62.5 C/W
2
1E-3
0.01
0.1
1
10 30
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
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APM7320K
Typical Characteristics (Cont.)
Output Characteristics
40 VGS= 4, 5, 6, 7, 8, 9, 10V 35 30 27
Drain-Source On Resistance
RDS(ON) - On - Resistance (m)
24 21 18 15 12 9 6 3 VGS=4.5V VGS=2.5V
30
ID - Drain Current (A)
3V 25 20 15 2.5V 10 5 0
2V 0 1 2 3 4 5 6
0
0
5
10
15
20
25
30
35
40
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
30
1.50
Gate Threshold Voltage
IDS= 250A
Normalized Threshold Voltage
25
1.25
ID - Drain Current (A)
20
1.00
15 TJ=125 C
o o
0.75
10
0.50
5
TJ=25 C
TJ=-55 C
o
0.25
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.00 -50 -25
0
25
50
75
100 125 150
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (C)
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
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APM7320K
Typical Characteristics (Cont.)
Drain-Source On Resistance
2.0 1.8 VGS = 4.5V IDS = 10A
10 Tj=150 C
o
Source-Drain Diode Forward
30
Normalized On Resistance
1.6
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75
o
IS - Source Current (A)
1.4
1
Tj=25 C
o
0.1
RON@Tj=25 C: 10m 100 125 150
0.03 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Tj - Junction Temperature (C)
VSD - Source - Drain Voltage (V)
Capacitance
2400 Frequency=1MHz 5 VDS=10V ID= 10A
Gate Charge
VGS - Gate - source Voltage (V)
20
2000
4
C - Capacitance (pF)
1600 Ciss 1200
3
2
800
400 Crss 0
Coss
1
0
4
8
12
16
0
0
4
8
12
16
20
VDS - Drain - Source Voltage (V)
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
6
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APM7320K
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
E
H
e1 D
e2
A1
A
1 L
0.004max.
Dim A A1 D E H L e1 e2 1
Mi ll im et er s Min. 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013
0.015X45
Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
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APM7320K
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
TP R am p-up
tp C ritical Zone T L to T P
T e m p e ra tu re
TL T sm ax
tL
T sm in R am p-down ts Preheat
25
t 25 C to Peak
T im e
Classificatin Reflow Profiles
Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds
6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 8 www.anpec.com.tw
APM7320K
Classificatin Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process - Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 350 <2.5 m m 240 +0/-5C 225 +0/-5C 2.5 m m 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0C* 260 +0C* 260 +0C* 1.6 m m - 2.5 m m 260 +0C* 250 +0C* 245 +0C* 2.5 m m 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0C. For exam ple 260C+0C) at the rated MSL level.
Reliability Test Program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles
Carrier Tape & Reel Dimensions
t E Po P P1 D
F W
Bo
Ao
D1
Ko
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
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APM7320K
Carrier Tape & Reel Dimensions(Cont.)
T2
J C A B
T1
Application
A 3301 F 5.5 0.1
B 62 1.5
C 12.75 + 0.1 5
J 2 + 0.5
T1 12.4 +0.2 P1 2.0 0.1
T2 2 0.2 Ao 6.4 0.1
W 12 + 0.3 - 0.1 Bo 5.2 0.1
P 8 0.1
E 1.75 0.1
SOP-8
D D1 Po 1.550.1 1.55+ 0.25 4.0 0.1
Ko t 2.1 0.1 0.30.013
Cover Tape Dimensions
Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3
(mm)
Devices Per Reel 2500
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
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