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| WT9435M Surface Mount P-Channel Enhancement Mode MOSFET D 1 P b Lead(Pb)-Free DRAIN CURRENT -4.8 AMPERS DRAIN SOUCE VOLTAGE -30 VOLTAGE S S G 8 7 D 2 3 D 6 S D 4 5 Features: *Super high dense cell design for low RDS(ON) R DS(ON) <55 m @VGS =-10V R DS(ON) <85 m @VGS =-4.5V *Rugged and Reliable *SO-8 Package 1 SO-8 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R JA TJ, Tstg Value -30 Unite V V A A A W C/W C + -20 -4.8 -24 -1.7 2.5 50 -55 to 150 Device Marking WT9435M=STM9435 http://www.weitron.com.tw WEITRON 1/6 01-Jul-05 WT9435M Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ Max Unit Static (2) Drain-Source Breakdown Voltage VGS=0V, ID=-250 uA Gate-Source Threshold Voltage VDS=VGS, ID=-250 uA Gate-Source Leakage Current + VDS=0V, VGS=-20V Zero Gate Voltage Drain Current VDS=-24V, VGS=0V Drain-Source On-Resistance VGS=-10V, ID=-5.3A VGS=-4.5V, ID=-4.2A On-State Drain Current VDS=-5V, VGS=-10A Forward Transconductance VDS=-5V, ID=-5.3A -30 -1 -1.5 -2.5 + -100 -1 55 85 V V nA uA m -20 rDS (on) 45 75 ID(on) gfs 5 - A S - Dynamic (3) Input Capacitance VDS=-15V, VGS=0V, f=1MHZ Output Capacitance VDS=-15V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=-15V, VGS=0V, f=1MHZ Ciss Coss Crss - 582 125 86 PF Switching (3) Turn-On Delay Time VGEN =-10V,V DD =-15V, I D=--1A, R L =15 ,R GEN=6 Rise Time VGEN =-10V,V DD =-15V, I D=--1A, R L =15 ,R GEN=6 Turn-Off Time VGEN =-10V,V DD =-15V, I D=--1A, R L =15 ,R GEN=6 Fall Time VGEN =-10V,V DD =-15V, I D=--1A, R L =15 ,R GEN=6 Total Gate Charge VDS=-15V, ID=-5.3A, V GS =-10V VDS=-15V, ID=-5.3A, VGS =-4.5V Gate-Source Charge VDS=-15V, ID=-5.3A, V GS =-10V Gate-Drain Charge VDS=-15V, ID=-5.3A, V GS =-10V Drain-Source Diode Forward Voltage VGS=0V, IS=-1.7A td(on) tr td(off ) tf Qg - 9 10 37 23 - nS nS nS nS nc - -1.2 11.7 5.7 2.1 2.9 -0.84 Qgs Qgd nc nc V VSD Note: 1. Surface Mounted on FR4 Board t < 10sec. _ < 300us, Duty Cycle < 2%. _ _ 2. Pulse Test : PW 3. Guaranteed by Design, not Subject to Production Testing. WEITRON http://www.weitron.com.tw 2/6 01-Jul-05 WT9435M 25 -VGS =10,9,8,7,6,5V -ID , DRAIN CURRENT(A) -ID ,DRAIN CURRENT(A) WE IT R ON 25 20 15 10 5 0 0 25 C -55 C 125 C 20 15 10 5 0 -VGS =3.5V 0 2 4 6 8 10 12 0.8 1.6 2.4 3.2 4.0 4.8 -VDS , DRAIN-TO-SOURCE VOLTAGE(V) -VGS , GATE-TO-SOURCE VOLTAGE(V) FIG.1. Output Characteristics 900 C ,CAPACITANCE( P F) FIG.2 Transfer Characteristics 1.8 750 600 450 300 150 0 0 5 10 15 20 Coss Crss 25 30 Ciss R DS(ON) , ON-RESISTANCE() 1.6 1.4 1.2 1.0 0.8 0.6 -55 VGS =-10V ID =-5.3A -25 0 25 50 75 100 125 -VDS , DRAIN-TO-SOURCE VOLTAGE(V) FIG.3 Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 BVDSS ,NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE(V) GATE-SOURCE THRESHOLD VOLTAGE(V) FIG.4 On-Resistance Variation with Drain Current and Temperature 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 ID =-250uA T j ,JUNCTION TEMPERATURE( C) VDS =VGS ID =-250uA Vth ,NORMALIZED T j ,JUNCTION TEMPERATURE( C) T j ,JUNCTION TEMPERATURE( C) FIG.5 Gate Threshold Variation with Temperature FIG.6 Breakdown Voltage Variation with Temperature http://www.weitron.com.tw WEITRON 3/6 01-Jul-05 WT9435M -IS ,SOURCE-DRAIN CURRENT(A) WE IT R ON 20.0 VGS =0V 10 gFS ,TRANSCONDUCTANCE(S) 8 6 4 2 VDS =-15V 0 0 5 10 15 20 10.0 1.0 0.4 0.6 0.7 0.9 1.1 1.3 -IDS ,DRAIN-SOURCE CURRENT(A) V SD ,BODY DIODE FORWARD VOLTAGE(V) FIG.7 Transconductance Variation with Drain Current -VGS ,GATE TO SOURCE VOLTAGE(V) FIG.8 Body Diode Forward Voltage Variation with Source Current 50 -ID , DRAIN CURRENT(A) 10 8 6 4 2 0 VDS =-15V ID =-5.3A 10 RD ON S( )L im it 10 10 1s DC ms 0m s 1 0 2 4 6 8 10 12 14 16 0.1 VGS=-10V Single Pulse 0.03 TA=25 C 0.1 1 10 30 50 Q g ,TOTAL GATE CHARGE(nC) -VDS ,DRAIN-SOURCE CURRENT(V) FIG.9 Gate Charge FIG.10 Maximum Safe Operating Area -VDD RL D VG S R GE N G S V OUT ton td(on) V OUT tr 90% 10% toff td(off) 90% 10% tf V IN 90% V IN 50% 10% 50% INVE R TE D PULS E WIDTH FIG.11 Switching Test Circuit FIG.12 Switching Waveforms http://www.weitron.com.tw WEITRON 4/6 01-Jul-05 WT9435M WE IT R ON 2 r(t) ,NORMALIZED TRANSIENT THERMAL RESISTANCE 1 Duty Cycle=0.5 0.2 0.1 0.1 0.05 0.02 P DM t1 t2 0.01 0.0001 Single Pulse 1. R jA (t)=r (t) * R j A 2. R jA=See Datasheet 3. TjM-TA = PDM* R jA(t) 4. Duty Cycle, D=t1/t 2 0.001 0.01 0.1 1 10 100 SQUARE WAVE PULSE DURATION(SEC) FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE http://www.weitron.com.tw WEITRON 5/6 01-Jul-05 WT9435M SO-8 Package Outline Dimensions Unit:mm 1 L E1 D 7 (4X) A C 7(4X) 2A A1 e B eB SYMBOLS MILLIMETERS MAX MIN A A1 B C D E1 eB e L 1.75 1.35 0.20 0.10 0.45 0.35 0.18 0.23 4.69 4.98 3.56 4.06 5.70 6.30 1.27 BSC 0.60 0.80 8 0 http://www.weitron.com.tw WEITRON 6/6 01-Jul-05 |
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