View BLW77_1161063.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
BLW77 HF/VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear amplifier in the h.f. band. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are delivered in matched hFE groups. The transistor has a 12" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW77
QUICK REFERENCE DATA R.F. performance up to Th = 25 C MODE OF OPERATION s.s.b. (class-AB) c.w. (class-B) Note 1. At 130 W P.E.P. VCE V 28 28 IC(ZS) A 0,1 - f MHz 1,6 - 28 87,5 PL W 15 - 130 (P.E.P.) 130 Gp dB > 12 typ. 7,5 % > 37,5(1) typ. 75 d3 dB < -30 -
PIN CONFIGURATION
PINNING - SOT121B. PIN DESCRIPTION collector emitter base emitter
handbook, halfpage 4
3
1 2 3 4
1
2
MLA876
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz;); Tmb = 25 C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. max. 70 V 35 V 4V 12 A 30 A 245 W 200 C
BLW77
-65 to + 150 C
102 handbook, halfpage IC (A)
MGP521
MGP522
handbook, halfpage
300
Prf (W) 200 derate by 1.11 W/K
10 Th = 70 C Tmb = 25 C 100 derate by 0.82 W/K
1 1 10 VCE (V) 102
0 0 50 Th (C) 100
I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch
Fig.2 D.C. SOAR.
Fig.3
R.F. power dissipation; VCE 28 V; f 1 MHz.
THERMAL RESISTANCE (dissipation = 100 W; Tmb = 90 C, i.e. Th = 70 C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 1,03 K/W 0,71 K/W 0,2 K/W
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified Collector-emitter breakdown voltage VBE = 0; IC = 50 mA Collector-emitter breakdown voltage open base; IC = 100 mA Emitter-base breakdown voltage open collector; IE = 20 mA Collector cut-off current VBE = 0; VCE = 35 V D.C. current gain(1) hFE hFE1/hFE2 voltage(1) VCEsat MHz(2) fT fT Cc Cre Ccf typ. typ. typ. typ. typ. typ. < IC = 7 A; VCE = 5 V D.C. current gain ratio of matched devices(1) IC = 7 A; VCE = 5 V Collector-emitter saturation IC = 20 A; IB = 4 A Transition frequency at f = 100 -IE = 7 A; VCB = 28 V -IE = 20 A; VCB = 28 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 28 V Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 28 V Collector-flange capacitance Notes 1. Measured under pulse conditions: tp 300 s; 0,02. 2. Measured under pulse conditions: tp 50 s; 0,01.
MGP523
BLW77
V(BR) CES V(BR) CEO V(BR)EBO ICES
> > > <
70 V 35 V 4V 20 mA 15 to 80 1,2 2V 320 MHz 300 MHz 255 pF 175 pF 3 pF
handbook,10 halfpage
IC (A) 1
Th = 70 C
25 C
10-1
Fig.4 Typical values; VCE = 20 V.
10-2 0.5
1
VBE (V)
1.5
August 1986
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
MGP524
handbook, halfpage
75
MGP525
handbook, halfpage
1500
hFE VCE = 28 V 50
Cc (pF) 1000
5V 25 500 typ
0 0 10 20 IC (A) 30
0 0 20 VCB (V) 40
Fig.5 Typical values; Tj = 25 C.
Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 C.
handbook, full pagewidth
400
MGP526
fT (MHz)
typ
200
0 0 5 10 15 -IE (A) 20
Fig.7 VCB = 28 V; f = 100 MHz; Tj = 25 C.
August 1986
5
Philips Semiconductors
Product specification
HF/VHF power transistor
APPLICATION INFORMATION R.F. performance in s.s.b. class-AB operation (linear power amplifier) VCE = 28 V; Th = 25 C; f1 = 28,000 MHz; f2 = 28,001 MHz OUTPUT POWER W 15 to 130 (P.E.P.) Gp dB > 12 dt (%) > 37,5 IC (A) < 6,2 d3 dB < -30 d5 dB < -30
BLW77
IC(ZS) A 0,1
at 130 W P.E.P.
handbook, full pagewidth
C1 L5 C2 C13 50 L1 R3 T.U.T. R6 C3 C5 C8 C7 C9 C10 R7 L2 L3 C11 C12 C15 C14
50
R1
R4
L4 +VCC
BD228 C6 BD443
C4
R2
R5
MGP527
Fig.8 Test circuit; s.s.b. class-AB.
August 1986
6
Philips Semiconductors
Product specification
HF/VHF power transistor
List of components: C1 C2 C3 C4 C5 C7 C10 C11 C12 C13 C14 C15 L1 L2 L3 R1 R2 R3 R4 R5 R6 R7 = = = = = = = = = = = = = = = = = = = = = = 27 pF ceramic capacitor (500 V) 100 pF air dielectric trimmer (single insulated rotor type) 180 pF polystyrene capacitor C6 = C9 = 100 nF polyester capacitor 100 pF air dielectric trimmer (single non-insulated rotor type) C8 = 3,9 nF ceramic capacitor 2,2 F moulded metallized polyester capacitor 2 x 180 pF polysterene capacitors in parallel 3 x 56 pF and 33 pF ceramic capacitors in parallel (500 V) 4 x 56 pF and 68 pF ceramic capacitors in parallel (500 V) 360 pF air dielectric trimmer (single insulated rotor type) 360 pF air dielectric trimmer (single non-insulated rotor type) 88 nH; 3 turns Cu wire (1,0 mm); int. dia. 9,0 mm; length 6,1 mm; leads 2 x 7 mm L4 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
BLW77
L5 = 80 nH; 2,5 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 10,0 mm; leads 2 x 7 mm 470 wirewound resistor (5,5 W) 4,7 wirewound potentiometer (3 W) 0,55 ; parallel connection of 4 x 2,2 carbon resistors ( 5%; 0,5 W each) 45 ; parallel connection of 4 x 180 wirewound resistors (5,5 W each) 56 ( 5%) carbon resistor (0,5 W) 27 ( 5%) carbon resistor (0,5 W) 4,7 ( 5%) carbon resistor (0,5 W)
August 1986
7
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
handbook, halfpage
-20
MGP528
MGP529
handbook, halfpage
60
30 Gp (dB) dt 20
d3, d5 (dB) d3 -40 d5
dt (%) 40
Gp 20 10
-60
0
50
100
P.E.P. (W)
150
0 0 50 100 P.E.P. (W)
0 150
VCE = 28 V; IC(ZS) = 100 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 C; typical values.
VCE = 28 V; IC(ZS) = 100 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 C; typical values.
Fig.9
Intermodulation distortion as a function of output power.(1.)
Fig.10 Double-tone efficiency and power gain as a function of output power.
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB.
August 1986
8
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
handbook, halfpage
40
MGP530
handbook, halfpage
5
MGP531
1 xi ()
Gp (dB) 30
ri () xi
0
20
2.5
-1
10
ri
-2
0 1 10 f (MHz)
0 102 1 10 f (MHz)
-3 102
VCE = 28 V; IC(ZS) = 100 mA; PL = 130 W; Th = 25 C; ZL = 2,5 .
VCE = 28 V; IC(ZS) = 100 mA; PL = 130 W; Th = 25 C; ZL = 2,5 .
Fig.11 Power gain as a function of frequency.
Fig.12 Input impedance (series components) as a function of frequency.
Figs 11 and 12 are typical curves and hold for an unneutralized amplifier in s.s.b. class-AB operation.
August 1986
9
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
handbook, halfpage
30
MGP533
handbook, halfpage
7.5
MGP534
0 xi () -1
Gp (dB)
ri () 5
xi
20
10
2.5 ri
-2
0 1 10 f (MHz)
102
0 1 10 f (MHz)
-3 102
VCE = 28 V; IC(ZS) = 100 mA; PL = 130 W; Th = 25 C; ZL = 2,5 ; neutralizing capacitor: 150 pF.
VCE = 28 V; IC(ZS) = 100 mA; PL = 130 W; Th = 25 C; ZL = 2,5 ; neutralizing capacitor: 150 pF.
Fig.13 Power gain as a function of frequency.
Fig.14 Input impedance (series components) as a function of frequency.
13 and 14 are typical curves and hold for a push-pull amplifier with cross-neutralization in s.s.b class-AB operation.
August 1986
10
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
handbook, halfpage
250
MGP532
PLnom (W P.E.P.) (VSWR = 1) 200
150
Th = 50 C 70 C 90 C
100 1 10 VSWR
102
The graph shows the permissible output power under nominal conditions (VSWR = 1) as a function of the expected VSWR during short-time mismatch conditions with heatsink temperatures as parameter.
Fig.15 R.F. SOAR; s.s.b. class-AB operation; f1 = 28,000 MHz; f2 = 28,001 MHz; VCE = 28 V; Rth mb-h = 0,2 K/W.
August 1986
11
Philips Semiconductors
Product specification
HF/VHF power transistor
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 C f (MHz) 87,5 VCE (V) 28 PL (W) 130 PS (W) typ. 23,2 Gp (dB) typ. 7,5 IC (A) typ. 6,2 (%) typ. 75 zi () 0,62 + j0,73
BLW77
YL (mS) 273 - j42
handbook, full pagewidth
C1 50 C2
L1 C3
,, ,, ,,
L5 L2 T.U.T. C4 L6 L4 C6 C5 L3 R1 L7 +VCC
C8 C9 50 C10
L8
C7ab
R2
MGP535
Fig.16 Test circuit; c.w. class-B.
List of components: C1 C2 C3 C4 C5 C6 C7a C7b L1 L2 L3 L4 L6 L8 R1 R2 = = = = = = = = = = = = = = = = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) C9 = C10 = 7 to 100 pF film dielectric trimmer (cat. no. 2222 809 07015) C8 = 22 pF ceramic capacitor (500 V) 4 x 82 pF ceramic capacitors in parallel (500 V) 390 pF polystyrene capacitor 220 nF polyester capacitor 2 x 10 pF ceramic capacitors in parallel (500 V) 2 x 8,2 pF ceramic capacitors in parallel (500 V) 25 nH; 2 turns Cu wire (1,6 mm); int. dia. 5,0 mm; length 4,6 mm; leads 2 x 5 mm L5 = 2,4 nH; strip (12 mm x 6 mm); tap for L4 and L6 at 5 mm from transistor L7 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 x 5 mm 46 nH; 2 turns Cu wire (2,0 mm); int. dia. 9,0 mm; length 6,0 mm; leads 2 x 5 mm 44 nH; 2 turns Cu wire (2,0 mm); int. dia. 9,0 mm; length 6,7 mm; leads 2 x 5 mm 10 ( 10%) carbon resistor 10 ( 10%) carbon resistor
L2 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric.
Component layout and printed-circuit board for 87,5 MHz test circuit are shown in Fig.17.
August 1986
12
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
116
handbook, full pagewidth
65
L3
L7 R2 +VCC
R1 L4 C1 L1 L2 L5 L8 rivet strip L6 C5
C6 C7a C8 C9
C2
C3
C4
C7b
C10
MGP536
Fig.17 Component layout and printed-circuit board for 87,5 MHz test circuit.
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets.
August 1986
13
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
MGP537
MGP538
handbook, halfpage
250 PL 200
handbook, halfpage
10
100 (%)
(W)
Gp (dB)
Gp 150 typ 5 100 50
50
0 0 25 50 PS (W) 75
0 0 100 200 PL (W)
0 300
Fig.18 VCE = 28 V; f = 87,5 MHz; Th = 25 C.
Fig.19 VCE = 28 V; f = 87,5 MHz; Th = 25 C; typical values.
handbook, halfpage
175
MGP539
PLnom (W) (VSWR = 1)
125
Th = 50 C 70 C 90 C 75 1 10 VSWR 102
The graph shows the permissible output power under nominal conditions (VSWR = 1) as a function of the expected VSWR during short-time mismatch conditions with heatsink temperatures as parameter.
Fig.20 R.F. SOAR; c.w. class-B operation; f = 87,5 MHz; VCE = 28 V; Rth mb-h = 0,2 K/W.
August 1986
14
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
MGP540
MGP541
handbook, halfpage
2
handbook, halfpage
5
0.5 RL CL (nF) 0
ri, xi () ri 0 xi
RL () 0
CL
-5
-0.5
-2
-10 0 100 f (MHz) 200
0
100
f (MHz)
-1 200
Fig.21 VCE = 28 V; PL =130 W; Th = 25 C; typical values.
Fig.22 VCE = 28 V; PL =130 W; Th = 25 C; typical values.
MGP542
handbook, halfpage
20
Gp (dB)
typ 10
0 0 50 100 f (MHz) 150
Fig.23 VCE = 28 V; PL =130 W; Th = 25 C.
August 1986
15
Philips Semiconductors
Product specification
HF/VHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLW77
SOT121B
D
A F q U1 C B
H L b
c
4
3
w2 M C A
p
U2
D1
U3
w1 M A B
1
H
2
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.27 6.17 0.286 0.243 b 5.82 5.56 c 0.16 0.10 D D1 F 2.67 2.41 H 28.45 25.52 L 7.93 6.32 p 3.30 3.05 Q 4.45 3.91 q 18.42 U1 24.90 24.63 0.98 0.97 U2 6.48 6.22 0.255 0.245 U3 12.32 12.06 0.485 0.475 w1 0.51 0.02 w2 1.02 45 0.312 0.130 0.249 0.120 0.175 0.725 0.154 0.04
12.86 12.83 12.59 12.57
0.229 0.006 0.219 0.004
0.506 0.505 0.105 1.120 0.496 0.495 0.095 1.005
OUTLINE VERSION SOT121B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
August 1986
16
Philips Semiconductors
Product specification
HF/VHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLW77
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1986
17

▲Up To Search▲

Price & Availability of BLW77

	To Download BLW77 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .