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FDP5800 N-Channel Logic Level PowerTrench(R) MOSFET
November 2006
FDP5800 N-Channel Logic Level PowerTrench(R) MOSFET
60V,80A, 6m Features
* RDS(on) = 4.6m (Typ.), VGS = 10V, ID = 80A * High performance trench technology for extermly low Rdson * Low gate Charge * High power and current handing capability * RoHs Compliant
tm
Applications
* Motor/ Body Load Control * Power Train Management * Injection Systems * DC-AC Converters and UPS
D
G
TO-220
G DS
FDP Series
S
MOSFET Maximum Ratings TC = 25C unless otherwise noted*
Symbol VDSS VGSS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Power Dissipation -Continuous (TC = 100oC) -Continuous (TA = 25oC) (Note 1) - Pulsed (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) Ratings 60 20 80 80* 14 320 652 242 1.61 -55 to +175 Units V V A A A A mJ W W/C C
Single Pulsed Avalanche Energy
Operating and Storage Temperature Range
*Drain current limited by package
Thermal Characteristics
RJC RJA RJA Thermal Resistance , Junction to Case Thermal Resistance , Junction to Ambient, 1in2 copper pad area Thermal Resistance , Junction to Ambient 0.62 43 62.5 C/W C/W C/W
Package Marking and Ordering Information
Device Marking FDP5800 Device FDP5800 Package TO220 Reel Size -Tape Width -Quantity 50
(c)2006 Fairchild Semiconductor Corporation FDP5800 Rev. A
1
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FDP5800 N-Channel Logic Level PowerTrench(R) MOSFET
Electrical Characteristics TC= 25C unless otherwise noted
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward ID = 250A, VGS = 0V, TJ =25oC VDS = 48V VGS = 0V TJ = 150C 60 --------1 500 100 V A A nA
VGS = 20V, VDS = 0V
On Characteristics
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250A VGS = 10V , ID = 80A VGS =4.5V , ID = 80A RDS(on) Static Drain-Source On Resistance VGS = 5V , ID = 80A VGS =10V, ID = 80A TJ = 175oC 1.0 -----4.6 5.9 5.6 10.4 2.5 6.0 7.2 7.0 12.6 V m m m m
Dynamic Characteristics
Ciss Coss Crss RG Qg(TOT) Qg(TH) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge VDS = 15V,VGS = 0V f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDS = 30V ID = 80A Ig = 1mA ----------6890 750 295 1.2 112 58 7.0 23 13 18 9160 1000 445 -145 -----pF pF pF nC nC nC nC nC nC
Switching Characteristics (VGS = 10V)
tON td(on) tr td(off) tf tOFF Turn-On Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-Off Time VDD = 30V, ID = 80A VGS = 10V, RGEN = 1.5 ------37 18 19 55 9 64 85 46 47 120 28 138 ns ns ns ns ns ns
Drain-Source Diode Characteristics
VSD trr Qrr Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 80A VGS = 0V, ISD = 40A VGS = 0V, ISD = 60A dIF/dt = 100A/s ------58 106 1.25 1.0 --V V ns nC
Notes: 1: L = 1mH, IAS = 36A, VDD = 54V, VGS = 10V, RG = 25, Starting TJ = 25oC
FDP5800 Rev. A
2
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FDP5800 N-Channel Logic Level PowerTrench(R) MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
400
* Notes : 1. 250s Pulse Test 2. TC = 25 C
o
Figure 2. Transfer Characteristics
1000
VDS = 6V
ID,Drain Current[A]
100
ID,Drain Current[A]
100
150 C
o
10
25 C
o
10
5 0.03
VGS 10.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V Top :
1
-55 C
o
0.1 1 VDS,Drain-Source Voltage[V]
0.1
3
1
2 3 4 VGS,Gate-Source Voltage[V]
5
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
5.5
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
1000
VGS = 0V
RDS(ON) [m], Drain-Source On-Resistance
5.0
VGS = 10V
IS, Reverse Drain Current [A]
100
150 C
o
o
25 C
4.5
VGS = 20V
10
4.0
* Note : TJ = 25 C
o
0
40
80 120 ID, Drain Current [A]
160
200
1 0.2
0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V]
1.4
Figure 5. Capacitance Characteristics
10000 9000 7500 Capacitances [pF] 6000 4500 3000 1500 100 -1 10
Crss Ciss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VDS = 25V VDS = 35V VDS = 50V
VGS, Gate-Source Voltage [V]
8
6
Coss
* Note: 1. VGS = 0V 2. f = 1MHz
4
2
* Note : ID = 80A
10 10 VDS, Drain-Source Voltage [V]
0
1
30
0
0
20
40 60 80 100 Qg, Total Gate Charge [nC]
120
FDP5800 Rev. A
3
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FDP5800 N-Channel Logic Level PowerTrench(R) MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage
Figure 8. On-Resistance Variation vs. Temperature
2.4 rDS(on), [Normalized] Drain-Source On-Resistance
1.1
2.0
1.6
1.0
1.2
0.9
* Notes : 1. VGS = 0V 2. ID = 250A
0.8
0.8 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
0.4 -80
* Notes : 1. VGS = 10V 2. ID = 80A
-40
0 40 80 120 160 o TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area
10
3
Figure 10. Maximum Drain Current vs. Case Temperature
125
CURRENT LIMITED BY PACKAGE
ID, Drain Current [A]
20s
10
2
100s
ID, Drain Current [A]
2
100
75
10
1
Operation in This Area is Limited by R DS(on) * Notes : 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
0
1ms 10ms
o o
50
DC
25
10
0
10
10 VDS, Drain-Source Voltage [V]
1
10
0 25
50
75 100 125 150 o TC, Case Temperature [ C]
175
Figure 11. Transient Thermal Response Curve
1
D = 0.5
ZJC(t),Thermal Response
0.2
0.1
0.1 0.05 0.02
PDM t1 t2
o
0.01
0.01 Single pulse
* Notes : 1. ZJC(t) = 0.62 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t)
1E-3 -5 10
10
-4
10 10 10 10 t1, Square Wave Pulse Duration [sec]
-3
-2
-1
0
10
1
10
2
FDP5800 Rev. A
4
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FDP5800 N-Channel Logic Level PowerTrench(R) MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP5800 Rev. A
5
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FDP5800 N-Channel Logic Level PowerTrench(R) MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/ d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
FDP5800 Rev. A
6
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FDP5800 N-Channel Logic Level PowerTrench(R) MOSFET
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
FDP5800 Rev. A
7
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FDP5800 N-Channel Logic Level PowerTrench(R) MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM UltraFET(R) VCXTM WireTM
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As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I21
FDP5800 Rev. A
8
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