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| BUZ21 Semiconductor Data Sheet October 1998 File Number 2420.1 19A, 100V, 0.100 Ohm, N-Channel Power MOSFET Features * 19A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power * rDS(ON) = 0.100 (BUZ21) field effect transistor designed for applications such as * SOA is Power Dissipation Limited /Subject switching regulators, switching converters, motor drivers, * Nanosecond Switching Speeds 19A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 00V, * Linear Transfer Characteristics This type can be operated directly from integrated circuits. .100 * High Input Impedance hm, N- Formerly developmental type TA9854. * Majority Carrier Device hannel * Related Literature ower Ordering Information - TB334 "Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND OSComponents to PC Boards" BUZ21 TO-220AB BUZ21 ET) /Author NOTE: When ordering, use the entire part number. Symbol ) D /Keyords G Harris emiS onducor, Nhannel ower Packaging OSJEDEC TO-220AB ET, O20AB) SOURCE /Creator DRAIN ) GATE /DOCIN DRAIN (FLANGE) O pdfark /Pageode /UseOutines /DOCIEW dfmark 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright (c) Harris Corporation 1998 BUZ21 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ21 100 100 19 75 20 75 230 0.6 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W mJ W/oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current, TC = 55oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 1mA (Figure 9) TJ = 25oC, VDS = 100V, VGS = 0V TJ = 125oC, VDS = 100V, VGS = 0V VGS = 20V, VDS = 0V ID = 9A, VGS = 10V (Figure 8) VDS = 25V, ID = 9A (Figure 11) VCC = 30V, ID 3A, VGS = 10V, RGS = 50, RL = 10. (Figures 16, 17) MIN 100 2.1 4 VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) TYP 3 20 100 10 0.09 8 30 50 170 80 1500 450 150 1.67 75 MAX 4 250 1000 100 0.1 45 75 220 110 2000 700 240 UNITS V V A A nA S ns ns ns ns pF pF pF oC/W oC/W Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient IGSS rDS(ON) gfs td(ON) tr td(OFF) tf CISS COSS CRSS RJC RJA Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulsed Source to Drain Current Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge NOTES: 2. Pulse Test: Pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, starting TJ = 25oC, L = 440H, RG = 50, IPEAK = 28A. (See Figures 14 and 15). SYMBOL ISD ISDM VSD trr QRR TC = 25oC TC = 25oC TJ = 25oC, ISD = 38A, VGS = 0V TJ = 25oC, ISD = 19A, dISD/dt = 100A/s, VR = 30V TEST CONDITIONS MIN TYP 1.5 200 0.25 MAX 19 75 2.1 UNITS A A V ns C 2 BUZ21 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0.8 Unless Otherwise Specified 30 25 20 15 10 5 0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150 0 VGS 10V 0.6 0.4 0.2 0 50 100 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZJC, TRANSIENT THERMAL IMPEDANCE 1 0.5 0.2 0.1 PDM 0.1 0.05 0.02 0.01 0 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 t1 t2 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 102 1.5s 10s ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 40 PD = 75W 30 20V 10V VGS = 80V VGS = 7.5V VGS = 7.0V VGS = 6.5V 101 OPERATION IN THIS AREA LIMITED MAY BE BY rDS(ON) 100s 1ms 10ms 100ms DC 20 VGS = 6.0V VGS = 5.5V 10 VGS = 5.0V VGS = 4.5V VGS = 4.0V 100 10-1 TC = 25oC TJ = MAX RATED 101 102 VDS, DRAIN TO SOURCE VOLTAGE (V) 103 0 0 2 4 6 8 100 10 12 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 3 BUZ21 Typical Performance Curves IDS(ON), DRAIN TO SOURCE CURRENT (A) 25 rDS(ON), ON-STATE RESISTANCE () PULSE DURATION = 80s VDS = 25V 20 Unless Otherwise Specified (Continued) 0.4 PULSE DURATION = 80s VGS = 5V 0.3 5.5V 6V 6.5V 7V 7.5V 15 TJ = 25oC 0.2 8V 9V 10V 20V 10 5 0.1 0 0 5 VGS, GATE TO SOURCE VOLTAGE (V) 10 0 0 10 20 30 ID, DRAIN CURRENT (A) 40 FIGURE 6. TRANSFER CHARACTERISTICS FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 0.25 VGS = 10V, ID = 9A PULSE DURATION = 80s GATE THRESHOLD VOLTAGE 5 VDS = VGS, ID = 1mA 4 rDS(ON), DRAIN TO SOURCE ON RESISTANCE () 0.20 0.15 3 0.10 2 0.05 1 0 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 0 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 101 10 VGS = 0, f = 1MHz gfs, TRANSCONDUCTANCE (S) 8 PULSE DURATION = 80s VDS = 25V TJ = 25oC C, CAPACITANCE (nF) 100 CISS 6 COSS CRSS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 10-2 0 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 10-1 4 2 0 0 5 10 15 ID, DRAIN CURRENT (A) 20 25 FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT 4 BUZ21 Typical Performance Curves ISD, SOURCE TO DRAIN CURRENT (A) 102 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80s Unless Otherwise Specified (Continued) 15 ID = 21A VDS = 20V 10 VDS = 80V 101 TJ = 150oC 100 TJ = 25oC 5 10-1 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0 VSD, SOURCE TO DRAIN VOLTAGE (V) 10 20 30 40 Qg(TOT) , TOTAL GATE CHARGE (nC) 50 FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms VDS tP IAS VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG + BVDSS L VDS VDD VDD 0V IAS 0.01 0 tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS 5 BUZ21 Test Circuits and Waveforms CURRENT REGULATOR (Continued) VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS 12V BATTERY 0.2F 50k 0.3F G DUT 0 Ig(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR Ig(REF) 0 FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORMS 6 |
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