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BUB323Z NPN Silicon Power Darlington
High Voltage Autoprotected D2PAK for Surface Mount
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The BUB323Z is a planar, monolithic, high-voltage power Darlington with a built-in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control.
Features
* Integrated High-Voltage Active Clamp * Tight Clamping Voltage Window (350 V to 450 V) Guaranteed * Clamping Energy Capability 100% Tested in a Live * * *
Ignition Circuit High DC Current Gain/Low Saturation Voltages Specified Over Full Temperature Range Design Guarantees Operation in SOA at All Times Pb-Free Packages are Available Over the -40C to +125C Temperature Range
AUTOPROTECTED DARLINGTON 10 AMPERES 360-450 VOLTS CLAMP 150 WATTS
360 V CLAMP
MAXIMUM RATINGS
Rating Collector-Emitter Sustaining Voltage Collector-Emitter Voltage Symbol VCEO VEBO IC ICM IB IBM PD Value 350 6.0 10 20 Unit Vdc Vdc Adc Adc
MARKING DIAGRAM
IIIIIIIIIIIIIIIIIII II I III II IIIIIIIIIIIIIIIIIII II I III I I IIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIII II I III I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III I I II II I IIIIIIIIIIIIIIIIIII II I II I III I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII II I IIIIII I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIII
Collector Current - Continuous - Peak Base Current - Continuous - Peak 3.0 6.0 Total Power Dissipation @ TC = 25_C Derate above 25_C 150 1.0 W W/_C _C Operating and Storage Junction Temperature Range TJ, Tstg -65 to +175
BUB323ZG AYWW D2PAK CASE 418B STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Symbol RqJC RqJA TL
Max 1.0
Unit
BUB323Z A Y WW G
= Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package
Thermal Resistance, Junction-to-Case
_C/W _C/W _C
Thermal Resistance, Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 in from Case for 5 Seconds
62.5 260
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
(c) Semiconductor Components Industries, LLC, 2005
1
August, 2005 - Rev. 1
Publication Order Number: BUB323Z/D
III I I I I I IIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II III II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I II I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I I I II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I II I I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I I I II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII
1. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%. SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH) CLAMPING ENERGY (See Notes) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 1) OFF CHARACTERISTICS (Note 1)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Cross-over Time
Storage Time
Fall Time
Repetitive Non-Destructive Energy Dissipated at turn-off: (IC = 7.0 A, L = 8.0 mH, RBE = 100 W) (see Figures 2 and 4)
Input Capacitance (VEB = 6.0 V)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Current Gain Bandwidth (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)
DC Current Gain (IC = 6.5 Adc, VCE = 1.5 Vdc) (IC = 5.0 Adc, VCE = 4.6 Vdc)
Diode Forward Voltage Drop (IF = 10 Adc)
Base-Emitter On Voltage (IC = 5.0 Adc, VCE = 2.0 Vdc) (IC = 8.0 Adc, VCE = 2.0 Vdc)
Collector-Emitter Saturation Voltage (IC = 7.0 Adc, IB = 70 mAdc)
Base-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 100 mAdc) (IC = 10 Adc, IB = 0.25 Adc)
Emitter-Base Leakage Current (VEB = 6.0 Vdc, IC = 0)
Collector-Emitter Cutoff Current (VCE = 200 V, IB = 0)
Collector-Emitter Clamping Voltage (IC = 7.0 A) (TC = - 40C to +125C)
(IC = 10 Adc, IB = 0.25 Adc)
(IC = 8.0 Adc, IB = 0.1 Adc)
Characteristic
(IC = 6.5 A, IB1 = 45 mA, VBE(off) = 0, RBE(off) = 0, VCC = 14 V, VZ = 300 V)
(TC = - 40C to +125C)
(TC = - 40C to +125C)
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BUB323Z
(TC = 125C)
(TC = 125C)
2 WCLAMP Symbol VCLAMP VCE(sat) VBE(sat) VBE(on) ICEO IEBO Cob hFE Cib VF tsi fT tfi tc Min 200 150 500 350 1.1 1.3 - - - - - - - - - - - - - - - - Typ 625 1.7 10 - - - - - - - - - - - - - - - - - - - - 3400 Max 550 200 100 450 2.0 2.5 2.1 2.3 1.6 1.8 1.8 2.1 1.7 2.2 2.5 30 50 - - - mAdc mAdc MHz Unit Vdc Vdc Vdc Vdc Vdc mJ pF pF ns ms ms -
BUB323Z
IC
INOM = 6.5 A
MERCURY CONTACTS WETTED RELAY
Output transistor turns on: IC = 40 mA
L INDUCTANCE (8 mH) VCE MONITOR (VGATE) IC CURRENT SOURCE
High Voltage Circuit turns on: IC = 20 mA
RBE = 100 W
Avalanche diode turns on: IC = 100 mA VCE VCLAMP NOMINAL = 400 V
IB CURRENT SOURCE
300 V 340 V
VBEoff IB2 SOURCE
IC MONITOR
0.1 W NON INDUCTIVE
250 V Icer Leakage Current
Figure 1. IC = f(VCE) Curve Shape
Figure 2. Basic Energy Test Circuit
By design, the BU323Z has a built-in avalanche diode and a special high voltage driving circuit. During an auto-protect cycle, the transistor is turned on again as soon as a voltage, determined by the zener threshold and the network, is reached. This prevents the transistor from going into a Reverse Bias Operating limit condition. Therefore, the device will have an extended safe operating area and will always appear to be in "FBSOA." Because of the built-in zener and associated network, the IC = f(VCE) curve exhibits an unfamiliar shape compared to standard products as shown in Figure 1.
The bias parameters, VCLAMP, IB1, VBE(off), IB2, IC, and the inductance, are applied according to the Device Under Test (DUT) specifications. VCE and IC are monitored by the test system while making sure the load line remains within the limits as described in Figure 4. Note: All BU323Z ignition devices are 100% energy tested, per the test circuit and criteria described in Figures 2 and 4, to the minimum guaranteed repetitive energy, as specified in the device parameter section. The device can sustain this energy on a repetitive basis without degrading any of the specified electrical characteristics of the devices. The units under test are kept functional during the complete test sequence for the test conditions described: IC(peak) = 7.0 A, ICH = 5.0 A, ICL = 100 mA, IB = 100 mA, RBE = 100 W, Vgate = 280 V, L = 8.0 mH
10 IC, COLLECTOR CURRENT (AMPS) TC = 25C 10 ms 250 ms 0.1 1 ms
300 ms
1
0.01
THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 100 340 V VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000
0.001 10
Figure 3. Forward Bias Safe Operating Area
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3
BUB323Z
IC ICPEAK IC HIGH
IC LOW VCE
The shaded area represents the amount of energy the device can sustain, under given DC biases (IC/IB/VBE(off)/ RBE), without an external clamp; see the test schematic diagram, Figure 2. The transistor PASSES the Energy test if, for the inductive load and ICPEAK/IB/VBE(off) biases, the VCE remains outside the shaded area and greater than the VGATE minimum limit, Figure 4a.
(a)
IC ICPEAK
VGATE MIN
IC HIGH
IC LOW VCE
(b)
IC ICPEAK
VGATE MIN
IC HIGH
The transistor FAILS if the VCE is less than the VGATE (minimum limit) at any point along the VCE/IC curve as shown on Figures 4b, and 4c. This assures that hot spots and uncontrolled avalanche are not being generated in the die, and the transistor is not damaged, thus enabling the sustained energy level required.
IC LOW VCE
(c)
IC ICPEAK
VGATE MIN
IC HIGH
The transistor FAILS if its Collector/Emitter breakdown voltage is less than the VGATE value, Figure 4d.
IC LOW VCE
(d)
VGATE MIN
Figure 4. Energy Test Criteria for BU323Z
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BUB323Z
10000 10000 TYPICAL hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 125C 1000 -40C 100 25C
1000 TYP - 6 TYP + 6 100
VCE = 1.5 V 10 100 1000 IC, COLLECTOR CURRENT (MILLIAMPS) 10000 10 100
VCE = 5 V, TJ = 25C 1000 10000 IC, COLLECTOR CURRENT (MILLIAMPS) 100000
Figure 5. DC Current Gain
Figure 6. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1 10 IB, BASE CURRENT (MILLIAMPS) 100 7A 5A 8A 10 A IC = 3 A TJ = 25C
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.1 25C IC/IB = 150 TJ = 125C
1 IC, COLLECTOR CURRENT (AMPS)
10
Figure 7. Collector Saturation Region
Figure 8. Collector-Emitter Saturation Voltage
VBE(on), BASE-EMITTER VOLTAGE (VOLTS)
VBE, BASE-EMITTER VOLTAGE (VOLTS)
2.0 IC/IB = 150 1.8 1.6 1.4 1.2 1.0 0.8 0.1 125C TJ = 25C
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.1 125C TJ = 25C VCE = 2 VOLTS
1 IC, COLLECTOR CURRENT (AMPS)
10
1 IC, COLLECTOR CURRENT (AMPS)
10
Figure 9. Base-Emitter Saturation Voltage
Figure 10. Base-Emitter "ON" Voltages
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BUB323Z
ORDERING INFORMATION
Device BUB323Z BUB323ZG BUB323ZT4 BUB323ZT4G Package D2PAK D2PAK (Pb-Free) D2PAK D2PAK (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 800 Units / Tape & Reel 800 Units / Tape & Reel Shipping 50 Units / Rail 50 Units / Rail
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BUB323Z
PACKAGE DIMENSIONS D2PAK CASE 418B-04 ISSUE J
C E -B-
4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40
V W
A
1 2 3
S
-T-
SEATING PLANE
K G D 3 PL 0.13 (0.005) H
M
W J
TB
M
VARIABLE CONFIGURATION ZONE L M
R
N U L
P L M
STYLE 1: PIN 1. 2. 3. 4.
M
F VIEW W-W 1
F VIEW W-W 2
F VIEW W-W 3
SOLDERING FOOTPRINT*
8.38 0.33
10.66 0.42
1.016 0.04
5.08 0.20
3.05 0.12 17.02 0.67
SCALE 3:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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7
BUB323Z
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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BUB323Z/D

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