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| MITSUBISHI TRANSISTOR MODULES QM400HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM400HA-2HB * * * * * IC Collector current ........................ 400A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 20.5 4-6.5 23.5 2 28 20.5 13 14 BX BX E 700.25 900.5 E C 10 12 9 E B E 10 13 21 C B 18 23.5 3 930.25 1130.5 3-M4 23.5 9.5 2-M8 37MAX. 30.5MAX. 8 LABEL 7 28.5 35 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM400HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 400 400 3120 20 4000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M8 2500 8.83~10.8 90~110 1.96~2.94 20~30 0.98~1.47 10~15 0.98~1.47 10~15 870 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm N*m kg*cm N*m kg*cm g Mounting screw M6 -- Mounting torque B(E) terminal screw M4 BX terminal screw M4 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1000V, VEB=2V VCB=1000V,Emitter open VEB=7V, Collector open IC=400A, IB=530mA IC=-400A (diode forward voltage) IC=400A, VCE=4.0V Min. -- -- -- -- -- -- 750 -- VCC=600V, IC=400A, IB1=800mA, -IB2=8.0A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 6.0 6.0 300 4.0 4.0 1.8 -- 2.5 15 3.0 0.04 0.175 0.02 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM400HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 500 IB=0.4A Tj=25C 400 IB=0.8A IB=0.1A 300 IB=80mA 200 IB=0.2A 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 10 1 2 3 4 5 7 10 2 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) DC CURRENT GAIN hFE 100 VCE=4.0V Tj=25C Tj=125C 2 3 4 5 7 10 3 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 2.2 2.6 3.0 3.4 3.8 4.2 VCE=2.8V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 BASE CURRENT IB (A) VBE(sat) SATURATION VOLTAGE 10 0 VCE(sat) 7 5 4 3 IB=530mA 2 Tj=25C Tj=125C -1 10 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) Tj=25C Tj=125C ton, ts, tf (s) 10 1 7 5 4 3 2 4 IC=400A IC=300A 3 2 IC=200A IC=100A SWITCHING TIME ts 1 0 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 2 3 5 7 10 1 Tj=25C Tj=125C 10 0 tf 7 5 4 ton 3 2 10 1 2 3 4 5 7 10 2 VCC=600V IB1=800mA -IB2=8A 2 3 4 5 7 10 3 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM400HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10 0 2 3 4 5 7 10 1 Tj=25C Tj=125C VCC=600V IC=400A IB1=800mA REVERSE BIAS SAFE OPERATING AREA 1200 COLLECTOR CURRENT IC (A) ts, tf (s) Tj=125C IB2=-8A 1000 800 600 400 200 0 SWITCHING TIME ts tf 2 3 4 5 7 10 2 0 200 400 600 800 1000 1200 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 TC=25C 2 NON-REPETITIVE 10 0 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 100 90 DERATING FACTOR OF F. B. S. O. A. 200S 1mS COLLECTOR CURRENT IC (A) 50S 100S DC DERATING FACTOR (%) 80 70 60 COLLECTOR 50 DISSIPATION SECOND BREAKDOWN AREA 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (C) COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 7 10 1 0.05 0.04 Zth (j-c) (C/ W) 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 1 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 0.03 0.02 0.01 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 Tj=25C Tj=125C 0 0.4 0.8 1.2 1.6 2.0 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM400HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 4000 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 4 3 2 Irr (A), Qrr (c) 10 2 7 5 4 3 2 10 1 7 5 3500 3000 Irr Qrr 10 1 VCC=600V IB1=0.8A -IB2=8A Tj=25C Tj=125C trr 10 0 trr (s) Feb.1999 2500 2000 1500 1000 500 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 5 7 10 2 2 3 4 5 7 10 3 2 3 45 CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 5 7 10 1 2 3 5 7 0.20 0.16 Zth (j-c) (C/ W) 0.12 0.08 0.04 0 10 -3 2 3 5 7 10 -2 2 3 5 710 -1 2 3 5 7 10 0 TIME (s) |
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