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| (R) MJD49T4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO TIP49 3 1 DPAK TO-252 (Suffix "T4") APPLICATIONS s SWITCH MODE POWER SUPPLIES s AUDIO AMPLIFIERS s GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD49T4 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 450 350 5 1 2 0.6 1.2 15 -65 to 150 150 Unit V V V A A A A W o o C C October 2003 1/6 MJD49T4 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 8.33 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 450 V V CE = 250 V V EB = 5 V I C = 30 mA 350 Min. Typ. Max. 0.1 0.1 1 Unit mA mA mA V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) V BE(on) h FE fT h fe Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain Transition Frequency Small Signal Current Gain IC = 1 A IC = 1 A I C = 0.3 A IC = 1 A I C = 0.2 A I C = 0.2 A I B = 0.2 A V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V f=2MHz f=1kHz 30 10 10 25 1 1.5 150 V V MHz Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area Derating Curves 2/6 MJD49T4 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Capacitance 3/6 MJD49T4 Switching Time Inductive Load Switching Time Inductive Load Switching Time Inductive Load Switching Time Inductive Load 4/6 MJD49T4 TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 DIM. P032P_B 5/6 MJD49T4 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
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