 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Philips Semiconductors Product Specification PowerMOS transistor BUK463-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK463 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -60A 60 22 75 175 0.08 MAX. -60B 60 20 75 175 0.10 UNIT V A W C PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DESCRIPTION PIN CONFIGURATION mb SYMBOL d g 2 1 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 k Tmb = 25 C Tmb = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 -60A 22 15 88 75 175 175 MAX. 60 60 30 -60B 20 14 80 UNIT V V V A A A W C C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS minimum footprint, FR4 board (see Fig. 18). TYP. 50 MAX. 2.0 UNIT K/W K/W July 1995 1 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor BUK463-60A/B STATIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 60 V; VGS = 0 V; Tj = 25 C VDS = 60 V; VGS = 0 V; Tj =125 C VGS = 30 V; VDS = 0 V VGS = 10 V; ID = BUK463-60A 10 A BUK463-60B MIN. 60 2.1 TYP. 3.0 1 0.1 10 0.07 0.08 MAX. 4.0 10 1.0 100 0.08 0.10 UNIT V V A mA nA DYNAMIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 10 A VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 3 A; VGS = 10 V; RGS = 50 ; Rgen = 50 Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad MIN. 4.5 TYP. 6.5 650 240 120 10 35 60 55 4.5 7.5 MAX. 825 350 160 20 55 90 80 UNIT S pF pF pF ns ns ns ns nH nH REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS IF = 22 A ; VGS = 0 V IF = 22 A; -dIF/dt = 100 A/s; VGS = 0 V; VR = 30 V MIN. TYP. 1.3 60 0.25 MAX. 22 88 1.7 UNIT A A V ns C AVALANCHE LIMITING VALUE Tmb = 25 C unless otherwise specified SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 22 A ; VDD 25 V ; VGS = 10 V ; RGS = 50 MIN. TYP. MAX. 50 UNIT mJ July 1995 2 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor BUK463-60A/B 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 1E+01 Zth j-mb / (K/W) ZTHX53 1E+00 0.5 0.2 0.1 0.05 0.02 0 P D tp D= tp T t 1E-01 T 0 20 40 60 80 100 Tmb / C 120 140 160 180 1E-02 1E-07 1E-05 1E-03 t/s 1E-01 1E+01 Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Tmb) ID% Normalised Current Derating Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T ID / A 20 15 10 BUK453-50A 120 110 100 90 80 70 60 50 40 30 20 10 0 45 VGS / V = 30 8 7 15 6 5 0 4 0 2 4 VDS / V 6 8 10 0 20 40 60 80 100 Tmb / C 120 140 160 180 Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tmb); conditions: VGS 10 V ID / A BUK453-60 Fig.5. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter VGS RDS(ON) / Ohm 4 0.4 5 4.5 0.3 5.5 6 6.5 7 VGS / V = 7.5 8 BUK453-50A 1000 0.5 100 S RD (O N) = VD S/ ID A B tp = 10 us 100 us DC 1 ms 10 ms 100 ms 0.2 10 20 0 0 10 20 ID / A 30 40 10 0.1 1 1 10 VDS / V 100 Fig.3. Safe operating area. Tmb = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp Fig.6. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(ID); parameter VGS July 1995 3 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor BUK463-60A/B ID / A 40 Tj / C = 30 25 150 BUK453-50A 4 VGS(TO) / V max. typ. 3 min. 20 2 10 1 0 0 0 2 4 6 8 10 12 VGS / V 14 16 18 20 -60 -20 20 60 Tj / C 100 140 180 Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj gfs / S BUK453-50A Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS ID / A SUB-THRESHOLD CONDUCTION 8 7 1E-01 1E-02 6 5 4 3 2 1 0 1E-06 1E-04 1E-03 2% typ 98 % 1E-05 0 10 20 ID / A 30 40 0 1 2 VGS / V 3 4 Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS = 25 V a Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C; VDS = VGS 2.0 Normalised RDS(ON) = f(Tj) 10000 C / pF BUK4y3-50 1.5 1000 Ciss 1.0 Coss 100 0.5 Crss 0 -60 -20 20 60 Tj / C 100 140 180 10 0 20 VDS / V 40 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 10 A; VGS = 10 V Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz July 1995 4 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor BUK463-60A/B 12 10 8 6 4 2 0 VGS / V BUK453-50 VDS / V =10 40 120 110 100 90 80 70 60 50 40 30 20 10 0 WDSS% 0 10 QG / nC 20 20 40 60 80 100 120 Tmb / C 140 160 180 Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 22 A; parameter VDS IF / A BUK453-50A Fig.15. Normalised avalanche energy rating. WDSS% = f(Tmb); conditions: ID = 22 A 50 + 40 VDD L VDS 30 VGS 20 Tj / C = 10 150 25 -ID/100 T.U.T. R 01 shunt 0 RGS 0 0 1 VSDS / V 2 Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj Fig.16. Avalanche energy test circuit. 2 WDSS = 0.5 LID BVDSS /(BVDSS - VDD ) July 1995 5 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor BUK463-60A/B MECHANICAL DATA Dimensions in mm Net Mass: 1.4 g 10.3 max 4.5 max 1.4 max 11 max 15.4 2.5 0.85 max (x2) 2.54 (x2) 0.5 Fig.17. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.18. SOT404 : soldering pattern for surface mounting. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". July 1995 6 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor BUK463-60A/B DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1995 7 Rev 1.000 |
Price & Availability of BUK463-60A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |