 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| STT5PF20V P-CHANNEL 20V - 0.065 - 5A SOT23-6L 2.5V-DRIVE STripFETTM II POWER MOSFET TYPE STT5PF20V s s s s VDSS 20 V RDS(on) < 0.080 (@4.5V) < 0.10 (@2.5V) ID 5A TYPICAL RDS(on) = 0.065 (@4.5V) TYPICAL RDS(on) = 0.085 (@2.5V) ULTRA LOW THRESHOLD GATE DRIVE (2.5V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SOT23-6L DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s MOBILE PHONE APPLICATIONS s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ORDERING INFORMATION SALES TYPE STT5PF20V MARKING STPN PACKAGE SOT23-6L PACKAGING TAPE & REEL October 2003 1/8 STT5PF20V ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Value 20 20 8 5 3.1 20 1.6 Unit V V V A A A W ( ) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed THERMAL DATA Rthj-amb Tj Tstg Thermal Resistance Junction-ambient Max Max. Operating Junction Temperature Storage Temperature 78 150 -55 to 150 C/W C C ELECTRICAL CHARACTERISTICS (TJ = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 8V Min. 20 1 10 100 Typ. Max. Unit V A A nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250A VGS = 4.5V, ID = 2.5 A VGS = 2.5V, ID = 2.5 A Min. 0.45 0.065 0.085 0.080 0.10 Typ. Max. Unit V DYNAMIC Symbol gfs (1) Ciss C oss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V , ID = 2.5 A VDS = 15 V, f = 1 MHz, VGS = 0 Min. Typ. 6.6 412 179 42.5 Max. Unit S pF pF pF 2/8 STT5PF20V ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 10 V, ID = 2.5 A RG = 4.7 VGS = 2.5 V (see test circuit, Figure 1) VDD = 10 V, ID = 5 A, VGS = 2.5V (see test circuit, Figure 2) Min. Typ. 11 47 4.5 0.73 1.75 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 10 V, ID = 2.5 A, RG = 4.7, VGS = 2.5 V (see test circuit, Figure 1) Min. Typ. 38 20 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, VGS = 0 ISD = 5 A, di/dt = 100A/s, VDD = 16 V, Tj = 150C (see test circuit, Figure 3) 32 12.8 0.8 Test Conditions Min. Typ. Max. 5 20 1.2 Unit A A V ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 3/8 STT5PF20V Safe Operating Area Thermal Impedence Junction-PCB Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/8 STT5PF20V Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STT5PF20V Fig. 1: Switching Times Test Circuit For Resistive Load Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 STT5PF20V TSOP-6 MECHANICAL DATA mm MIN. A A1 A2 b C D E E1 L e e1 0.90 0.00 0.90 0.25 0.09 2.80 2.60 1.50 0.35 0.95 1.90 TYP. MAX. 1.45 0.15 1.30 0.50 0.20 3.10 3.00 1.75 0.55 MIN. 0.035 0.000 0.035 0.010 0.004 0.110 0.102 0.059 0.014 0.037 0.075 mils TYP. MAX. 0.057 0.006 0.051 0.020 0.008 0.122 0.118 0.069 0.022 DIM. A A2 A1 b e1 e c L E D E1 7/8 STT5PF20V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 8/8 |
Price & Availability of STT5PF20V
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |