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Transistor
2SC1980
Silicon NPN epitaxial planer type
For high breakdown voltage low-noise amplification Complementary to 2SA921
Unit: mm
5.00.2
4.00.2
q q
0.70.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25C)
Ratings 120 120 7 50 20 250 150 -55 ~ +150 Unit V V
0.45+0.15 0.1 2.5+0.6 0.2 1 23
12.90.5
0.45+0.15 0.1 2.5+0.6 0.2
mA mA mW C C
2.30.2
1:Emitter 2:Collector 3:Base EIAJ:SC-43A TO-92-A1 Package
V
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage
(Ta=25C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE fT NV
*
Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 5V, IC = 2mA IC = 20mA, IB = 2mA VCB = 5V, IE = -2mA, f = 200MHz VCE = 40V, IC = 1mA, GV = 80dB Rg = 100k, Function = FLAT
min
typ
0.70.2
High collector to emitter voltage VCEO. Low noise voltage NV.
5.10.2
s Features
max 0.1 1
Unit A A V V V
120 120 7 180 700 0.6 200 150
VCE(sat)
V MHz mV
*h
FE
Rank classification
R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 hFE
Rank
337
Transistor
PC -- Ta
500 24 Ta=25C 450 20 IB=50A 45A 40A 16 35A 30A 12 25A 8 20A 15A 4 10A 5A 0 0 40 80 120 160 200 0 2 4 6 8 10 12 0 0 0.4 0.8 50 25C
2SC1980
IC -- VCE
60 VCE=10V
IC -- VBE
Collector power dissipation PC (mW)
Collector current IC (mA)
Collector current IC (mA)
400 350 300 250 200 150 100 50 0
Ta=75C 40
-25C
30
20
10
1.2
1.6
2.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 0.3 25C 0.1 -25C 0.03 0.01 0.1 Ta=75C IC/IB=10 1200
hFE -- IC
800 VCE=10V
fT -- I E
VCB=5V Ta=25C
Forward current transfer ratio hFE
1000
Transition frequency fT (MHz)
3 10 30 100
700 600 500 400 300 200 100
800 Ta=75C 600 25C -25C
400
200
0.3
1
3
10
30
100
0 0.1
0.3
1
0 - 0.1 - 0.3
-1
-3
-10
-30
-100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob -- VCB
8 160 IE=0 f=1MHz Ta=25C 140
NV -- IC
VCE=10V GV=80dB Function=FLAT
Collector output capacitance Cob (pF)
7 6 5 4 3 2 1 0 1 3 10
Noise voltage NV (mV)
120 100 80 60 22k 40 4.7k 20 0 0.01 Rg=100k
30
100
0.03
0.1
0.3
1
Collector to base voltage VCB (V)
Collector current IC (mA)
338
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
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2001 MAR

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