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| SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION. FEATURES High Transition Frequency : fT=100MHz(Typ.). Complementary to KTA1225D/L. A C KTC2983D/L EPITAXIAL PLANAR NPN TRANSISTOR I J MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 160 160 5 1.5 1.0 1.0 10 150 -55 150 UNIT V V V A A 1. BASE H F 1 2 F 3 P L DIM A B C D E F H I J K L M O P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 1.10 + 0.2 _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.00 + 0.20 _ 0.50 + 0.10 _ 0.91+ 0.10 _ 0.90 + 0.1 _ 1.00 + 0.10 0.95 MAX B K E M Q D 2. COLLECTOR 3. EMITTER DPAK W A C I J D O H G P F F L 1 2 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 1.10 + 0.2 _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 0.2 2.0 + _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX Q K 1. BASE 2. COLLECTOR 3. EMITTER E B ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification O:70~140, Y:120~240 ) TEST CONDITION VCB=160V, IE=0 VEB=5V, IC=0 IC=10mA, IB=0 IE=1mA, IC=0 VCE=5V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=500mA VCE=10V, IC=100mA VCB=10V, IE=0, f=1MHz MIN. 160 5.0 70 - IPAK SYMBOL ICBO IEBO V(BR)CEO V(BR)EBO hFE(Note) VCE(sat) VBE fT Cob TYP. 100 25 MAX. 1.0 1.0 240 1.5 1.0 - UNIT A A V V V V MHz pF 2003. 3. 27 Revision No : 3 1/3 KTC2983D/L I C - VCE 1.0 COLLECTOR CURRENT I C (A) 20 mA A m 12 A 8m hFE - I C COMMON EMITTER Tc=25 C 300 Tc=100 C 0.8 0.6 0.4 0.2 0 DC CURRENT GAIN h FE 6mA Tc=25 C 4mA 100 Tc=-25 C 50 30 COMMON EMITTER VCE =5V I B =2mA 0mA 0 2 4 6 8 10 12 14 16 10 0.003 0.01 0.03 0.1 0.3 1 3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) V CE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3 C 100 Tc= I C /I B =10 I C - VBE 1.0 COLLECTOR CURRENT I C (A) COMMON EMITTER VCE =5V Tc=100 C Tc=25 C Tc=-25 C COMMON EMITTER 0.8 0.6 0.4 0.2 0 0.1 0.05 0.03 0.003 0.01 0.03 0.1 Tc=25 C Tc=-25 C 0.3 1 3 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE VBE (V) COLLECTOR POWER DISSIPAZTION PC (W) f T - IC TRANSITION FREQUENCY f T (MHz) 300 Pc - Ta 30 25 20 15 10 5 0 0 1 1 Tc=25 C 2 Ta=25 C 100 50 30 COMMON EMITTER VCE =10V Tc=25 C 2 0 0.005 0.01 0.03 0.1 0.3 1 20 40 60 80 100 120 140 160 180 COLLECTOR CURRENT I C (A) AMBIENT TEMPERATURE Ta ( C) 2003. 3. 27 Revision No : 3 2/3 KTC2983D/L SAFE OPERATING AREA 5 3 COLLECTOR CURRENT I C (A) 1.5 1 0.5 0.3 I C MAX(PULSED) * I C MAX (CONTINUOUS) DC s* 1m * ms 10 s* 0m 10 OP Tc ER =2 AT 5 I C ON 0.1 0.05 0.02 5 * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 10 30 50 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) 2003. 3. 27 Revision No : 3 3/3 |
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