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| SLA5086 Absolute maximum ratings Symbol VDSS VGSS ID ID(pulse) PT Ratings -60 20 -5 -10 (PW1ms, duty25%) P-channel General purpose (Ta=25C) External dimensions A *** SLA (12-pin) Electrical characteristics Symbol V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td(on) tr td(off) tf VSD trr Specification min typ max -60 100 -100 -1.0 -2.0 4 6 0.14 0.22 790 310 90 40 110 160 80 -1.0 -1.5 85 Unit V nA A V S pF pF pF ns ns ns ns V ns (Ta=25C) Unit V V A A Conditions ID=-100A, VGS=0V VGS=20V VDS=-60V, VGS=0V VDS=-10V, ID=-250A VDS=-10V, ID=-3A VGS=-10V, ID=-3A VDS=-10V, f=1.0MHz, VGS=0V ID=-3A, VDD -20V, RL=6.67, VGS=-5V, see Fig. 4 on page 16. ISD=-5A, VGS=0V ISD=3A, VGS=0V, di/dt=100A/s j-a j-c VISO Tch Tstg 5 (Ta=25C, with all circuits operating, without heatsink) W 30 (Tc=25C,with all circuits operating, with infinite heatsink) 25 (Junction-Air, Ta=25C, with all circuits operating) C/W 4.17 (Junction-Case, Tc=25C, with all circuits operating) C/W 1000 (Between fin and lead pin, AC) Vrms 150 C -40 to +150 C sEquivalent circuit diagram 1 12 2 4 6 8 10 3 5 7 9 11 Characteristic curves ID-VDS Characteristics (Typical) -10 -10V -4 V ID-VGS Characteristics (Typical) -10 RDS(ON)-ID Characteristics (Typical) 0.30 (Ta=25C) -3.7V (VDS=-10V) (Ta=25C) -8 -3.5V -8 0.25 -4V ID (A) -3.3V ID (A) -6 -6 (ON) () 0.20 0.15 VGS=-10V -4 -4 -3.0V Ta=125C 25C RDS 0.10 0.05 -40C -2 -2.7V VGS=-2.5V -2 0 0 0 -2 -4 -6 -8 -10 0 -1 -2 -3 -4 -5 0 0 -2 -4 -6 -8 -10 VDS (V) VGS (V) ID (A) Re(yfs)-ID Characteristics (Typical) 50 RDS(ON)-TC Characteristics (Typical) 0.35 0.30 0.25 (ON) () Capacitance-VDS Characteristics (Typical) 5000 (VDS=-10V) (ID=-3A) VGS=0V (Ta=25C) f=1MHz Re (yfs) (S) Ta = -40 C VG S= -4 0.20 0.15 0.10 0.05 -10 V Capacitance (pF) 10 V 1000 Ciss RDS 25C Coss 1 125C 100 Crss 0.1 -0.05 -0.1 -1 -10 0 -40 10 0 50 100 150 0 -10 -20 -30 -40 -50 ID (A) TC (C) VDS (V) IDR-VSD Characteristics (Typical) -10 Safe Operating Area (SOA) -20 -10 100s PT-Ta Characteristics 40 35 30 25 W ith (Ta=25C) All Circuits Operating -8 s m 10 IM IT ED 1m s IDR (A) PT (W) ID (A) -1 0V (O N) L -6 4V RD S= 20 15 S In fin VG - -1 ite -4 0V He at sin k 10 -2 TC=25C 1-Circuit Operation 5 0 -1 -10 -100 Without Heatsink 0 0 -0.5 -1.0 -1.5 -0.1 -0.1 0 50 100 150 VSD (V) VDS (V) Ta (C) 105 |
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