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MOSFET MODULE
FEATURES
* Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching Dissipation
Dual 30A 450V/500V
PD4M441L / PD4M440L
OUTLINE DRAWING
108.0 Dimension(mm)
TYPICAL APPLICATIONS
* Power Supply for the Communications and the Induction Heating
Circuit
MAXMUM RATINGS Ratings
Drain-Source Voltage (VGS=0V) Gate - Source Voltage Continuous Drain Current Duty=50% D.C.
Approximate Weight : 220g
Symbol
VDSS VGSS ID IDM PD Tjw Tstg VISO FTOR
PD4M441L
450 +/ - 20 30 (Tc=25C) 21 (Tc=25C) 60 Tc=25C) 230 Tc=25C) -40 to +150 -40 to +125 2000 3.0 2.0
PD4M440L
500
Unit
V V A A W C C V N*m
Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Isolation Voltage Terminals to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (@Tc=25C unless otherwise noted) Characteristic Symbol Test Condition
Zero Gate Voltage Drain Current Gate-Source Threshold Voltage Gate-Source Leakage Current Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time IDSS VGS(th) IGSS rDS(on) gfs Cies Coss Crss td(on) tr td(off) tf VDS=VDSS,VGS=0V Tj=125C, VDS=VDSS,VGS=0V VDS=VGS, ID=1mA VGS=+/- 20V,VDS=0V VGS=10V, ID=15A VDS=15V, ID=15A VDS=25V,VGS=0V,f=1MHz VDD= 1/2VDSS ID=15A VGS= -5V, +10V RG= 7ohm
Min.
2.0 -
Typ.
3.2 190 27 5.2 1.1 0.18 100 60 180 50
Max.
1.0 4.0 4.0 1.0 210 -
Unit mA V A m-ohm S nF nF nF ns
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Characteristic Symbol Test Condition
Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery IS ISM VSD trr Qr D.C. IS=30A IS=30A, -dis/dt=100A/s
Min.
-
Typ.
750 17
Max.
21 60 2.0 -
Unit A A V ns C Unit C/W
THERMAL CHARACTERISTICS Characteristic Symbol
Thermal Resistance, Junction to Case Thermal Resistance, Case to Heatsink Rth(j-c) Rth(c-f)
Test Condition
MOS FET Diode Mounting surface flat, smooth, and greased
Min.
-
Typ.
-
Max.
0.56 0.56 0.1
PD4M44xL
108.0
PD4M440L/441L, P2H4M440L/441L
Fig.1- Output Characteristics (Typical)
50
Fig.2- Drain to Source On Voltage vs. Gate to Source Voltage (Typical)
TC=25
8
250s PULSE TEST VGS=10V
40
TC=25 250s PULSE TEST ID=30A
6V
Drain to Source Voltage V DS (V)
6
DrainCurrent I D (A)
30
4
20
ID=15A
5V
10
2
ID=10A
0 0 2 4 6 8
4V
10 12
0
0
2
4
6
8
10
12
14
16
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Fig.3- Drain to Source On Voltage vs. Junction Temperature (Typical)
16 14
Fig.4- Capacitance vs. Drain to Source Voltage (Typical)
VGS=10V
12
250s PULSE TEST ID=30A
Drain to Source Voltage V DS (V)
10
VGS=0V f=1MHZ TC=25
12
Capacitance C (nF)
8
10 8
6
ID=15A
6
Ciss
ID=10A
4
4
2
Coss Crss
2 0 -40
0
0
40
80
120
160
1
3
10
30
100
Junction Temperature Tj ()
Drain to Source Voltage VDS (V)
Fig.5- Gate Charge vs. Gate to Source Voltage (Typical)
16
Fig.6- Series Gate Impedance vs. Switching Time (Typical)
5 3
ID=20A VDD=100V
14
VDD=250V VDD=400V
Gate to Source Voltage V GS (V)
VDD=250V ID=15A TC=25 80s Pulse Test
12 10 8 6 4 2 0 0 50 100
Switching Time t (s)
1
0.3
toff
0.1
ton
150
200
250
0.05
1
2
5
10
20
50
100
200
Total Gate Charge Qg (nC)
Series Gate Impedance RG ()
PD4M440L/441L, P2H4M440L/441L
Fig.7- Drain Current vs. Switching Time (Typical)
1000 50
Fig.8- Source to Drain Diode Forward Characteristics (Typical)
Switching Time t (s)
td(off) td(on)
Source Current I S (A)
300
tr
40
30
100
TJ=125
20
TJ=25
tf
30
VDD=250V RG=7 TC=25 80s Pulse Test
0.7 1 3 10 30 70
10
10
0
0
0.4
0.8
1.2
Drain Current ID (A)
Source to Drain Voltage VSD (V)
Fig.9- Reverse Recovery Characteristics (Typical)
3000
Fig.10- Maximum Safe Operating Area
200 100 50
Operation in this area is limited by R DS(on)
Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns)
...IS=15A IS=30A TJ=150
1000
10s 100s
Drain Current I D (A)
trr
20 10 5 2
300
1ms
100
10ms
IRrM
1 0.5
TC=25 Tj=150MAX Single Pulse
1 3 10 30 100
DC
441L
300
440L
1000
30 0 100 200 300 400 500 600
0.2
-dis/dt (A/s)
Drain to Source Voltage V DS (V)
Fig.11- Normalized Transient Thermal Impedance (MOSFET)
Normalized Transient Thermal Impedance [rth (J-C)/Rth (J-C) ]
1x10 1
3
1
3x10 -1
1x10 -1
3x10 -2
1x10 -2 10 -5
Per Unit Base Rth(j-c)= 0.56/W 1 Shot Pulse
10 -4 10 -3 10 -2 10 -1 1 10 1
PULSE DURATION t (s)

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