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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advance Information
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half-wave, silicon gate-controlled devices are needed. * Blocking Voltage to 800 Volts * On-State Current Rating of 8 Amperes RMS * High Surge Current Capability -- 90 Amperes * Industry Standard TO-220AB Package for Ease of Design * Glass Passivated Junctions for Reliability and Uniformity * Low Trigger Currents, 200A Maximum for Direct Driving from Integrated Circuits
*Motorola preferred devices
MCR8S SERIES*
SCRs 8 AMPERES RMS 400 thru 800 VOLTS
A
K A G
CASE 221A-06 (TO-220AB) Style 3
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter Peak Repetitive Off-State Voltage (1) Peak Repetitive Reverse Voltage (TJ = -40 to 110C; RGK = 1.0 K) Symbol VDRM VRRM MCR8SD MCR8SM MCR8SN IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 400 600 800 8 90 34 5.0 0.5 2.0 - 40 to +110 - 40 to +150 A A A2sec Watts Watts A C C Value Unit Volts
On-State RMS Current (All Conduction Angles) Peak Non-repetitive Surge Current (One Half Cycle, 60 Hz, TJ = 125C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width 1.0 s, TC = 80C) Average Gate Power (t = 8.3 ms, TC = 80C) Peak Gate Current (Pulse Width 1.0 s, TC = 80C) Operating Junction Temperature Range Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds RJC RJA 2.2 62.5 C/W
TL 260 C (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
This document contains information on a new product. Specifications and information herein are subject to change without notice. Preferred devices are Motorola recommended choices for future use and best overall value.
(c) Motorola, Inc. 1995
Motorola Thyristor Device Data
1
MCR8S SERIES
ELECTRICAL CHARACTERISTICS (TJ = 25C; RGK = 1.0 K unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Forward Blocking Current Peak Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) (1) TJ = 25C TJ = 110C IDRM IRRM -- -- -- -- 10 500 A
ON CHARACTERISTICS
Peak On-State Voltage (ITM = 16 A) (2) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) (3) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) Hold Current (Anode Voltage =12 V) VTM IGT VGT IH -- 5.0 0.5 0.5 1.4 20 0.65 1.0 1.8 200 1.0 6.0 Volts A Volts mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage (VD = 67% of Rated VDRM, Exponential Waveform, TJ = 110C) (dv/dt) 2.0 10 -- V/s
(1) Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. (2) Pulse test: P.W. 2ms, Duty Cycle 2%. (3) Does not include RGK current.
PACKAGE DIMENSIONS
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
STYLE 3: PIN 1. 2. 3. 4.
H Z L V G D N R J
CATHODE ANODE GATE ANODE
CASE 221A-06 (TO-220AB)
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
2
*MCR8S/D*
Motorola Thyristor Device Data
MCR8S/D

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