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| PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTP 2N60P IXTY 2N60P VDSS ID25 RDS(on) = 500 = 2 5.1 V A Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25 C to 150 C TJ = 25 C to 150 C; RGS = 1 M Continuous Transient TC = 25 C TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 50 TC = 25 C Maximum Ratings 600 V 600 V 30 40 2 4 2 10 150 10 55 -55 ... +150 150 -55 ... +150 V V A A A mJ mJ V/ns TO-220 (IXTP) G DS (TAB) TO-252 AA (IXTY) G W C C C C C G = Gate S = Source S (TAB) 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-220 TO-252 (TO-220) 300 260 D = Drain TAB = Drain 1.13/10 Nm/lb.in. 4 0.8 g g Features l Symbol Test Conditions (TJ = 25 C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 25 A VDS = VGS, ID = 250 A VGS = 30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125 C Characteristic Values Min. Typ. Max. 600 3.0 5.0 50 1 50 5.1 V V nA A A l l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % Easy to mount Space savings High power density (c) 2006 IXYS All rights reserved DS99422E(04/06) IXTP 2N60P IXTY 2N60P Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 1.4 2.2 240 VGS = 0 V, VDS = 25 V, f = 1 MHz 28 3.5 28 VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25 RG = 50 (External) 20 60 23 7.0 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 2.5 2.1 S pF pF pF ns ns ns ns nC nC nC 2.25 C/W (TO-220) 0.25 C/W Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain TO-220 (IXTP) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VDS= 20 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD trr Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25 C unless otherwise specified) Min. Typ. Max. 2 6 1.5 400 A A V ns TO-252 AA (IXTY) Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 2 A -di/dt = 100 A/s Pins: 1 - Gate 4 - Drain Dim. A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 Millimeter Min. Max. 2.19 0.89 0 0.64 0.76 5.21 0.46 0.46 5.97 4.32 6.35 4.32 2.38 1.14 0.13 0.89 1.14 5.46 0.58 0.58 6.22 5.21 6.73 5.21 3 - Source Inches Min. 0.086 0.035 0 0.025 0.030 0.205 0.018 0.018 0.235 0.170 0.250 0.170 Max. 0.094 0.045 0.005 0.035 0.045 0.215 0.023 0.023 0.245 0.205 0.265 0.205 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 0.89 2.54 1.02 1.27 2.92 0.090 BSC 0.180 BSC 0.370 0.020 0.025 0.035 0.100 0.410 0.040 0.040 0.050 0.115 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTP 2N60P IXTY 2N60P Fig. 1. Output Characteristics @ 25C 2 1.8 1.6 1.4 VGS = 10V 8V 7V 3.6 3.2 2.8 VGS = 10V 8V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes 1.2 1 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 12 6V I D - Amperes 2.4 2 1.6 1.2 0.8 0.4 0 0 3 6 9 12 15 18 21 7V 6V 24 27 30 V D S - Volts Fig. 3. Output Characteristics @ 125C 2 1.8 1.6 VGS = 10V 8V 7V 3.4 3.1 VGS = 10V V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature R D S ( o n ) - Normalized 2.8 2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 2A I D = 1A I D - Amperes 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 4 8 12 16 20 24 5V 6V -50 -25 0 25 50 75 100 125 150 V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID 3 2.8 2.6 VGS = 10V TJ = 125 C 2.2 2 1.8 1.6 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature R D S ( o n ) - Normalized 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 0.5 1 1.5 2 I D - Amperes TJ = 25 C 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 2.5 3 3.5 I D - Amperes (c) 2006 IXYS All rights reserved TC - Degrees Centigrade IXTP 2N60P IXTY 2N60P Fig. 7. Input Adm ittance 3.6 3.2 2.8 4 3.6 3.2 TJ = -40 C 25 C 125 C Fig. 8. Transconductance I D - Amperes 2.4 2 1.6 1.2 0.8 0.4 0 4 4.5 5 5.5 6 6.5 7 7.5 TJ =125 C 25 C -40 C g f s - Siemens 2.8 2.4 2 1.6 1.2 0.8 0.4 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 7 6 5 10 9 8 VDS = 300V I D = 1A I G = 10mA I D - Amperes Fig. 10. Gate Charge I S - Amperes 7 VG S - Volts TJ = 25 C 4 3 2 1 0 0.4 0.5 0.6 0.7 0.8 0.9 1 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 TJ = 125 C V S D - Volts Fig. 11. Capacitance 1000 f = 1MHz 10.0 Q G - nanoCoulombs Fig. 13. Maxim um Transient Therm al Resistance Capacitance - picoFarads 100 R( t h ) J C - C / W 30 35 40 C iss 1.0 10 C oss C rss 1 0 5 10 15 20 25 0.1 0.1 1 10 100 1000 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. Pulse Width - milliseconds |
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