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| Schottky Barrier Diodes (SBD) MA2Q739 Silicon epitaxial planar type Unit : mm For high-frequency rectification 4.4 0.3 0 to 0.05 * Forward current (average) IF(AV): 0.7 A type * Reverse voltage (DC value) VR: 90 V * Allowing automatic insertion with the emboss taping 2.5 0.3 I Features 2 1 0.25 - 0.05 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current*1 Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 90 90 0.7 10 -40 to +125 -40 to +125 Unit V V A A C C 1.2 0.4 5.0 - 0.1 + 0.4 1.2 0.4 Non-repetitive peak forward surge current*2 Junction temperature Storage temperature 1 : Anode 2 : Cathode New Mini-Power Type Package (2-pin) Marking Symbol: PE Note) *1 : With a printed-circuit board *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 90 V IF = 0.7 A VR = 10 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 50 100 Conditions Min Typ Max 1 0.8 Unit mA V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 10 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 2.15 0.3 + 0.1 1.4 0.2 1 MA2Q739 IF V F 10 1.6 1.4 Schottky Barrier Diodes (SBD) VF Ta 100 Ta = 125C 10 1.2 1.0 0.8 0.6 0.4 0.2 300 mA 10 mA IR VR 1 0.1 75C 25C Reverse current IR (mA) Forward voltage VF (V) Forward current IF (A) Ta = 125C 1 75C 0.1 0.01 - 20C IF = 700 mA 0.001 0.01 25C 0.000 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 -40 0.001 0 40 80 120 160 200 0 20 40 60 80 100 120 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) IR T a 100 VR = 90 V 10 Ct VR 400 f = 1 MHz Ta = 25C Terminal capacitance Ct (pF) Reverse current IR (mA) 50 V 10 V 1 300 200 0.1 100 0.01 0.001 -40 0 0 40 80 120 160 200 0 20 40 60 80 100 120 Ambient temperature Ta (C) Reverse voltage VR (V) 2 |
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