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FDS8670 30V N-Channel PowerTrench(R) MOSFET
August 2006
FDS8670
tm
30V N-Channel PowerTrench(R) MOSFET
General Description
This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low Rds(on) has been maintained to provide an extremely versatile device.
Features
* * * * * 21 A, 30 V Max RDS(ON) = 3.7 m @ VGS = 10 V Max RDS(ON) = 5.0 m @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) and gate charge Minimal Qgd (5.5 nC typical) 100% RG tested (0.9 typical) RoHS Compliant
Applications
* High Efficiency DC-DC Converters: * Notebook Vcore Power Supply * Telecom Brick Synchronous Rectifier * Multi purpose Point Of Load
D
D
D
D
5 6
4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS ID PD VGSS Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
30 20
(Note 1a)
Units
V V A W
21 105 2.5 1.2 1 -55 to +150
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJC
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
C/W
Package Marking and Ordering Information
Device Marking FDS8670 Device Reel Size 13'' FDS8670
Tape width 12mm
Quantity 2500 units
FDS8670 Rev C (W)
(c)2005 Fairchild Semiconductor Corporation
FDS8670 30V N-Channel PowerTrench(R) MOSFET
Electrical Characteristics
Symbol
BVDSS
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A
Min Typ Max Units
30 39 1 100 1 1.4 -5 3.3 4.2 4.4 118 4040 1730 160 0.2 0.9 12 11 56 68 1.5 21 20 90 108 82 42 3.7 5.0 5.5 3 V mV/C A nA V mV/C m
Off Characteristics
BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on)
ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 20 V, VDS = VGS, VGS = 0 V VDS = 0 V ID = 250 A
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance
ID = 250 A, Referenced to 25C VGS = 10 V, ID = 21 A VGS = 4.5 V, ID = 18 A VGS=10 V, ID =21 A, TJ=125C VDS = 10 V, ID = 21 A
gFS Ciss
S pF pF pF ns ns ns ns nC nC nC nC 1.2 V ns A nC
Dynamic Characteristics
Input Capacitance Coss Crss RG td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd VSD trr IRM Qrr Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 15 V, f = 1.0 MHz f = 1.0 MHz
V GS = 0 V,
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
VDD = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6
Total Gate Charge at VGS = 10V Total Gate Charge at VGS = 5V Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Voltage Diode Reverse Recovery Time
VDD = 15 V,
ID = 21 A
58.5 30 9.5 5.5
Drain-Source Diode Characteristics and Maximum Ratings
VGS = 0 V, IS = 2.1 A
(Note 2)
0.7 51 1.5 37
Diode Reverse Recovery Current Diode Reverse Recovery Charge
IF = 21 A, dIF/dt = 100 A/s
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50/W when 2 mounted on a 1 in pad of 2 oz copper
b) 105/W when 2 mounted on a .04 in pad of 2 oz copper
c) 125/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDS8670 Rev C (W)
FDS8670 30V N-Channel PowerTrench(R) MOSFET
Typical Characteristics
105 87.5 ID, DRAIN CURRENT (A) 70 52.5 35 17.5 0 0
VGS = 10V 6.0V 4.5V 3.5V
3.0V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3.4
VGS = 2.5V
2.8
2.2
1.6
3.0V 3.5V 4.0V 4.5V
2.5V
1
6.0V
10V
0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V)
2
0.4 0 35 70 ID, DRAIN CURRENT (A) 105
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.011 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 21A VGS = 10V
1.4
ID = 10.5A
0.008
1.2
1
TA = 125oC
0.005
0.8
TA = 25oC
0.002
0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
105
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
1000 IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
VDS = 5V
100 10 1 0.1 0.01
25oC -55oC
ID, DRAIN CURRENT (A)
70
TA = 125oC
35
TA =125oC
-55oC
0.001
0 1
25 C
o
0.0001
3.5
1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V)
0
0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS8670 Rev C (W)
FDS8670 30V N-Channel PowerTrench(R) MOSFET
Typical Characteristics (continued)
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 21A 8
5000
f = 1MHz VGS = 0 V
4000 CAPACITANCE (pF)
VDS = 10V
20V
Ciss
6 15V 4
3000
2000
Coss
2
1000
Crss
0 0 10 20 30 40 Qg, GATE CHARGE (nC) 50 60
0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30
Figure 7. Gate Charge Characteristics.
1000
P(pk), PEAK TRANSIENT POWER (W) 100
Figure 8. Capacitance Characteristics.
SINGLE PULSE RJA = 125C/W TA = 25C
ID, DRAIN CURRENT (A)
100
RDS(ON) LIMIT
10
10s VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25 C
o
100s 1ms 10ms 100ms 1s
80
60
1
DC
40
0.1
20
0.01 0.01
0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V)
100
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 125 C/W P(pk)
0.01
0.1
0.1 0.05 0.02
t1
0.01
t2
SINGLE PULSE
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS8670 Rev C (W)
FDS8670 30V N-Channel PowerTrench(R) MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I20

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