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| PROCESS CP318V Small Signal Transistor NPN - High Voltage Transistor Chip Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 25,536 PRINCIPAL DEVICE TYPES MPS455 EPITAXIAL PLANAR 26 x 26 MILS 7.1 MILS 0.6 MILS 5.5 x 5.5 MILS 5.5 x 5.5 MILS Al Si - 17,000A Au - 12,000A BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (28 -March 2005) Central TM PROCESS CP318V Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (28 -March 2005) |
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