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| v00.0904 HMC457QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Features Output IP3: +46 dBm Gain: 27 dB @ 1900 MHz 48% PAE @ +32 dBm Pout +25 dBm W-CDMA Channel Power @ -50 dBc ACPR Integrated Power Control (Vpd) QSOP16G SMT Package: 29.4 mm2 8 AMPLIFIERS - SMT Typical Applications The HMC457QS16G is ideal for applications requiring a high dynamic range amplifier: * CDMA & W-CDMA * GSM, GPRS & Edge * Base Stations & Repeaters Functional Diagram General Description The HMC457QS16G is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE makes the HMC457QS16G an ideal power amplifier for Cellular/3G base station & repeater applications. Electrical Specifications, TA = +25C, Vs= +5V, Vpd = +5V, Vbias = +5V (note 1) Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) (note 2) Noise Figure Supply Current (Icq) Control Current (Ipd) Bias Current (Vbias) 42 26 24 Min. Typ. 1710 - 1990 27 0.025 11 8 29 32.5 45 6 500 4 10 42 27.5 0.035 22 Max. Min. Typ. 2010 - 2170 25 0.025 11 5 30.5 32 45 5 500 4 10 0.035 Max. Units MHz dB dB / C dB dB dBm dBm dBm dB mA mA mA Note 1: Specifications and data reflect HMC457QS16G measured using the respective application circuits for each designated frequency band found herein. Contact the HMC Applications Group for assistance in optimizing performance for your application. Note 2: Two-tone output power of +15 dBm per tone, 1 MHz spacing. 8 - 300 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com v00.0904 HMC457QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Broadband Gain & Return Loss @ 1900 MHz 30 25 20 RESPONSE (dB) 15 10 5 0 -5 -10 -15 -20 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) Gain vs. Temperature @ 1900 MHz 30 28 26 24 GAIN (dB) 8 AMPLIFIERS - SMT 8 - 301 S21 S11 S22 22 20 18 16 14 12 10 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 +25C +85C -40C FREQUENCY (GHz) Input Return Loss vs. Temperature @ 1900 MHz 0 -2 -4 RETURN LOSS (dB) -6 -8 -10 -12 -14 -16 -18 -20 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 +25C +85C -40C Output Return Loss vs. Temperature @ 1900 MHz 0 +25C +85C -40C -3 RETURN LOSS (dB) -6 -9 -12 -15 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 FREQUENCY (GHz) FREQUENCY (GHz) PldB vs. Temperature @ 1900 MHz 34 32 30 P1dB (dBm) 28 26 24 22 20 1.6 +25 C +85 C -40 C Psat vs. Temperature @ 1900 MHz 34 32 30 Psat (dBm) 28 26 24 22 20 1.6 +25 C +85 C -40 C 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com v00.0904 HMC457QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz 8 AMPLIFIERS - SMT Output IP3 vs. Temperature @ 1900 MHz 50 48 Noise Figure vs. Temperature @ 1900 MHz 10 9 8 NOISE FIGURE (dB) 46 OIP3 (dBm) 44 42 40 38 36 34 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 FREQUENCY (GHz) +25 C +85 C -40 C 7 6 5 4 3 2 1 0 1.6 1.7 1.8 1.9 2 +25 C +85 C -40 C 2.1 FREQUENCY (GHz) Gain, Power & IP3 vs. Supply Voltage @ 1900 MHz GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 50 45 40 35 30 25 20 15 10 5 4.5 Gain P1dB Psat OIP3 Gain, Power & IP3 vs. Supply Current @ 1900 MHz* GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 50 45 40 35 30 25 20 15 10 5 440 Gain P1dB Psat OIP3 4.75 5 Vs (Vdc) 5.25 5.5 480 520 Icq (mA) 560 600 Power Compression @ 1900 MHz 50 Pout (dBm), GAIN (dB), PAE (%) 45 40 35 30 25 20 15 10 5 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 Pout (dBm) Gain (dB) PAE (%) ACPR vs. Supply Voltage @ 1960 MHz CDMA 2000, 9 Channels Forward -30 5V -40 -50 -60 -70 -80 Source ACPR -90 12 14 16 18 20 22 24 26 28 Channel Power (dBm) 4.5V CDMA2000 Frequency: 1.96 GHz Integration BW: 1.228 MHz Forward Link, SR1, 9 Channels ACPR (dBc) 5.5V INPUT POWER (dBm) * Icq is controlled by varying Vpd. 8 - 302 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com v00.0904 HMC457QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Broadband Gain and Return Loss @ 2100 MHz 30 25 20 Gain vs. Temperature @ 2100 MHz 30 28 26 8 AMPLIFIERS - SMT 8 - 303 RESPONSE (dB) 15 10 5 0 -5 18 -10 -15 -20 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) 16 14 1.9 S11 S21 S22 GAIN (dB) 24 22 20 +25C +85C -40C 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 FREQUENCY (GHz) Input Return Loss vs. Temperature @ 2100 MHz 0 -2 -4 RETURN LOSS (dB) -6 -8 -10 -12 -14 -16 -18 -20 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 +25C +85C -40C Output Return Loss vs. Temperature @ 2100 MHz 0 +25C +85C -40C -2 RETURN LOSS (dB) -4 -6 -8 -10 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 FREQUENCY (GHz) FREQUENCY (GHz) PldB vs. Temperature @ 2100 MHz 34 32 30 P1dB (dBm) 28 26 24 22 20 1.9 +25 C +85 C -40 C Psat vs. Temperature @ 2100 MHz 34 32 30 Psat (dBm) 28 26 24 22 20 1.9 +25 C +85 C -40 C 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com v00.0904 HMC457QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz 8 AMPLIFIERS - SMT Output IP3 vs. Temperature @ 2100 MHz 50 48 Noise Figure vs. Temperature @ 2100 MHz 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 +25 C +85 C -40 C 46 OIP3 (dBm) 44 42 40 38 36 34 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 FREQUENCY (GHz) +25 C +85 C -40 C 0 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Gain, Power & IP3 vs. Supply Voltage @ 2100 MHz GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 50 45 40 35 30 25 20 15 10 5 4.5 Gain P1dB Psat OIP3 Gain, Power & IP3 vs. Supply Current @ 2100 MHz* GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 50 45 40 35 30 25 20 15 10 5 440 Gain P1dB Psat OIP3 4.75 5 Vs (Vdc) 5.25 5.5 480 520 Icq (mA) 560 600 Power Compression @ 2100 MHz 50 Pout (dBm), GAIN (dB), PAE (%) 45 40 35 Pout (dBm) Gain (dB) PAE (%) ACPR vs. Supply Voltage @ 2140 MHz W-CDMA, 64 DPCH -30 -35 -40 ACPR (dBc) -45 -50 -55 -60 -65 -70 Source ACPR 12 14 16 18 20 22 24 26 28 4.5V W-CDMA Frequency: 2.14 GHz Integration BW: 3.84 MHz 64 DPCH 30 25 20 15 10 5 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 5.5V 5V -75 Channel Power (dBm) INPUT POWER (dBm) *Icq is controlled by varying Vpd 8 - 304 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com v00.0904 HMC457QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Power Dissipation 3 2.8 POWER DISSIPATION (W) 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 -10 2100 MHz 1900 MHz Max Pdiss @ +85C Absolute Maximum Ratings Collector Bias Voltage (Vcc) Control Voltage (Vpd) RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) Junction Temperature Continuous Pdiss (T = 85 C) (derate 42.9 mW/C above 85 C) Thermal Resistance (junction to ground paddle) Storage Temperature +6.0 Vdc +5.4 Vdc +20 dBm 150 C 2.78 W 8 AMPLIFIERS - SMT 8 - 305 23.3 C/W -65 to +150 C -40 to +85 C -8 -6 -4 -2 0 2 4 6 8 10 Operating Temperature INPUT POWER (dBm) Typical Supply Current vs. Supply Voltage Vs (V) 4.5 5.0 5.5 Icq (mA) 400 510 620 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com v00.0904 HMC457QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz 8 AMPLIFIERS - SMT Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: MOLDING COMPOUND MP-180S OR EQUIVALENT. 2. LEAD MATERIAL: Cu w/Ag SPOT PLATING. 3. LEAD PLATING: 80Sn/20Pb 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 8. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1. 8 - 306 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com v00.0904 HMC457QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Pin Descriptions Pin Number Function Description Interface Schematic 8 AMPLIFIERS - SMT 8 - 307 1 Vcc Power supply voltage for the first amplifier stage. External bypass capacitors are required as shown in the application schematic. 2, 4, 5, 7, 9, 16 GND Ground: Backside of package has exposed metal ground slug that must also be connected to RF/DC ground. Vias under the device are required. 3 Vbias Power Supply for Bias Circuit 6 RF IN This pin is AC coupled and matched to 50 Ohms from 1.7 - 2.2 GHz 8 Vpd Power control pin. For maximum power, this pin should be connected to +5.0V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 10 - 15 RF OUT RF output and DC bias for the output stage. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com v00.0904 HMC457QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz 8 AMPLIFIERS - SMT 1900 & 2100 MHz Application Circuit This circuit was used to specify the performance for 1900 & 2100 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. Recommended Component Values TL1 Impedance Physical Length Electrical Length 50 Ohm 0.55" 62 TL2 50 Ohm 0.07" 8 C1 - C4 C5, C6 C7 C8 C9 L1, L2 R1 1900 MHz 100 pF 1000 pF 2.2 F 33 pF 3.9 pF 3.9 nH 160 Ohm 2100 MHz 100 pF 1000 pF 2.2 F 33 pF 2.7 pF 3.9 nH 160 Ohm PCB Material: 10 mil Rogers 4350, Er = 3.48 8 - 308 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com v00.0904 HMC457QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Evaluation PCB 8 AMPLIFIERS - SMT List of Materials for Evaluation PCB 106043-1900, 110171-2100* Item J1, J2 J3, J4 C1 - C4 C5, C6 C7 C8 C9 C9 L1, L2 R1 U1 PCB** Description PC Mount SMA Connector 2 mm DC Header 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 F Capacitor, Tantalum 33 pF Capacitor, 0402 Pkg. 3.9 pF Capacitor, 0603 Pkg. - 1900 MHz 2.7 pF Capacitor, 0603 Pkg. - 2100 MHz 3.9 nH Inductor, 0603 Pkg. 160 Ohm Resistor, 0603 Pkg. HMC457QS16G 109585 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. ** Circuit Board Material: Rogers 4350, Er = 3.48 * Reference one of these numbers when ordering complete evaluation PCB depending on frequency of operation. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 309 |
Price & Availability of HMC457QS16G
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