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| Advanced Technical Information Fast IGBT Chopper in ISOPLUS i4-PACTM FII 30-12D IC25 VCES VCE(sat) typ. = 30 A = 1200 V = 2.3 V 1 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25C TC = 90C VGE = 15 V; RG = 82 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 82 ; TVJ = 125C non-repetitive TC = 25C Conditions TVJ = 25C to 150C Maximum Ratings 1200 20 30 18 35 VCES 10 125 V V A A A s W Features * NPT IGBT - low saturation voltage - no latch up - positive temperature coefficient for easy paralleling * HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current * ISOPLUS i4-PACTM package - isolated back surface - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline Applications * single phaseleg - buck-boost chopper * H bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier * three phase bridge - AC drives - controlled rectifier Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.3 2.6 4.5 0.9 200 100 75 500 70 3.0 2.4 1000 70 3.0 6.5 0.9 V V V mA mA nA ns ns ns ns mJ mJ pF nC 1.0 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 20 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 0.6 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 20 A VGE = 15 V; RG = 82 VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 18 A (c) 2000 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-2 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 039 FII 30-12D Diodes Symbol VRRM IF25 IF90 Conditions TVJ = 25C to 150C TC = 25C TC = 90C Maximum Ratings 1200 25 15 V A A Dimensions in mm (1 mm = 0.0394") Symbol VF IRM t rr RthJC Conditions IF = 20 A; TVJ = 25C TVJ = 125C IF = 15 A; diF/dt = -400 A/s; TVJ = 125C VR = 600 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.5 1.9 16 130 2.9 V V A ns 2.3 K/W Component Symbol TVJ Tstg VISOL FC Symbol dS,dA dS,dA RthCH Weight IISOL 1 mA; 50/60 Hz mounting force with clip Conditions pin - pin pin - backside metal with heatsink compound Conditions Maximum Ratings -55...+150 -55...+125 2500 20...120 C C V~ N Characteristic Values min. typ. max. 1.7 5.5 0.15 9 mm mm K/W g (c) 2000 IXYS All rights reserved 2-2 |
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