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| QS5U21 Transistor Small switching (-20V, -1.5A) QS5U21 Features 1) The QS5U21 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Pch MOSFET have a low on-state resistance with a fast switching. 3) Pch MOSFET is reacted a low voltage drive(2.5V) 4) The Independently connected Schottky barrier diode have a low forward voltate. External dimensions (Units : mm) + 2.9 - 0.1 1.9 + 0.2 - 0.85+0.1 - 0.7+ 0.1 - 0.3 to 0.6 1.0MAX 0.95 0.95 (5) + 2.8 - 0.2 + 1.6 - 0.2 0.1 (4) 0 to 0.1 (1) 0.4 +0.1 -0.05 (2) (3) 0.16+0.1 -0.06 Each lead has same dimensions Applications Load switch, DC/DC conversion Abbreviated symbole : U21 Structure Silicon P-channel MOSFET Schottky Barrier DIODE Equivalent circuit (5) (4) 2 Packaging specifications Package Type Code Basic ordering unit (pieces) QS5U21 Taping TR 3000 (1) (2) (3) 1 (1)ANODE (2)SOURCE (3)GATE (4)DRAIN (5)CATHODE 1 ESD PROTECTION DIODE 2 BODY DIODE Absolute maximum ratings (Ta=25C) < MOSFET > Parameter DRAIN-SOURCE VOLTAGE GATE-SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT PULSED SOURCE CURRENT (BODY DIODE) CONTINUOUS PULSED Symbol VDSS VGSS ID IDP IS ISP Tch Limits -20 12 1.5 6.0 -0.75 -0.3 150 Unit V V A A A A C PW< 10s DUTY CYCLE <1% = = PW< 10s DUTY CYCLE <1% = = CHANNEL TEMPERATURE < Di > REPETITIVE PEAK REVERSE VOLTAGE REVERSE VOLTAGE FORWARD CURRENT FORWARD CURRENT SURGE PEAK JUNCTION TEMPERATURE < MOSFET AND Di > TOTAL POWER DISSIPATION RANGE OF STRAGE TEMPERATURE VRM VR IF IFSM Tj 25 20 1.0 3.0 125 V V A A C 60HZ / 1CYC. PD Tstg 1.0 -40125 W/TOTAL/MOUNTED ON A CERAMIC BOARD C 1/4 QS5U21 Transistor Electrical characteristics (Ta=25C) < MOSFET > Parameter Gate-source leakage Symbol IGSS Min. - -20 - -0.7 - - - 1.0 - - - - - - - - - - Typ. - - - - 160 180 260 - 325 60 40 10 10 35 10 4.2 1.0 1.1 Max. 10 - -1 -2.0 200 240 340 - - - - - - - - - - - Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=12V/ VDS=0V ID=-1mA/ VGS=0V VDS=-20V/ VGS=0V VDS=-10V/ ID=-1mA ID=-1.5A, VGS=-4.5V ID=-1.5A, VGS=-4V ID=-0.75A, VGS=-2.5V VDS=-10V, ID=-0.75A VDS=-10V VGS=0V f=1MHz ID=-0.75A VDD -15 VGS=-4.5V RL=20 RGS=10 VDD Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage IDSS VGS(th) RDS(on) Pulsed Yfs Pulsed Ciss Coss Crss td(on) Pulsed tr Pulsed td(off) Pulsed tf Pulsed Qg Qgs Qgd Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise Time Turn off delay time Fall time Total gate charge Gate-source charge Gate-drain charge -15V VGS=-4.5V ID=-1.5A < MOSFET >Body diode(source-drain) Forward voltage < Di > Foward voltage drop Reverse leakage VF IR - - - - VSD - - -1.2 V IS=-0.75A/ VGS=0V 0.45 200 V A IF=1.0A VR=20V 2/4 QS5U21 Transistor Electrical characteristic curves 10 VDS=-10V Pulsed 1000 Static Drain-Source On-State Resistance RDS(on)[m] 1000 VGS=-4V Pulsed Static Drain-Source On-State Resistance RDS(on)[m] VGS=-4.5V Pulsed Drain Current : -ID (A) 1 Ta=125C 75C 25C -20C 0.1 100 Ta=125 C 75 C 25 C -25 C 100 Ta=125 C 75 C 25 C -25 C 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 0.1 1 10 10 0.1 1 10 Gate-Source Voltage : VGS[V] Drain Current : -ID[A] Drain Current : -ID[A] Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Resistance vs.Drain Current Fig.3 Static Drain-Source On-State Resistance vs.Drain Current 1000 Static Drain-Source On-State Resistance RDS(on)[m] Static Drain-Source On-State Resistance RDS(on)[m] 350 300 250 200 150 100 50 0 0 2 4 6 8 ID=-0.75A -1.5A 100 Ta=125 C 75 C 25 C -25 C Static Drain-Source On-State Resistance RDS(on)[m] VGS=-2.5V Pulsed 400 Ta=25 C Pulsed 1000 Ta=25 C Pulsed 100 VGS=-2.5V -4.0V -4.5V 10 0.1 1 10 Drain Current : -ID[A] 10 12 10 0.1 1 10 Fig.4 Static Drain-Source On-State Resistance vs.Drain-Current Gate-Source Voltage : -VGS[V] Drain Current : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs.Gate-Source Voltage Fig.6 Static Drain-Source On-State Resistance vs.Drain Current 10 Reverse Drain Current : -IDR[A] VGS=0V Pulsed 10000 Ta=25 C f=1MHZ VGS=0V 1000 Capacitance : C [pF] 1 Ta=125 C 75 C 25 C -25 C 1000 Switching Time : t [ns] Ta=25 C VDD=-15V VGS=-4.5V RG=10 Pulsed tf 100 td(off) Ciss 100 Coss Crss 0.1 10 td(on) tr 0.01 0 0.5 1.0 1.5 2.0 10 0.01 0.1 1 10 100 1 0.01 0.1 1 10 Source-Drain Voltage : -VSD[V] Drain-Source Voltage : -VDS[V] Drain Current : -ID[A] Fig.7 Reverse Drain Current vs. Source-Drain Current Fig.8 Typical Capactitance vs.Drain-Source Voltage Fig.9 Switching Characteristics 3/4 QS5U21 Transistor 8 7 Ta=25 C VDD=-15V ID=-2.5A RG=10 Pulsed 1000 Ta=125 C 75 C 25 C -25 C 100 125 C Gate-Source Voltage: -VGS [V] 6 5 4 3 2 1 0 Forward Current : IF [mA] 100 Reverse Current : IR[A] 10 1 75 C 10 0.1 25 C 0.01 -25 C 1 0.001 0.1 0.0001 0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 Forward Voltage :VF [V] Reverse Voltage : VR[V] 0 1 2 3 4 5 6 Total Gate Charge : Qg[nC] Fig.10 Dynamic Input Characteristics Fig.11 Forward Temperature Characteristics Fig.12 Reverse Temperature Characteristics Measurement circuits VGS 10% 50% Pulse Width 50% 90% 10% 10% VGS ID D.U.T. RL VDS VDS 90% 90% RG VDD td(on) ton tr td(off) tf toff Fig.13 Switching Time Measurement Circuit Fig.14 Switching Waveforms VG Qg VGS VGS IG(Const) ID VDS Qgs RG D.U.T. RL Qgd VDD Charge Fig.15 Gate Charge Measurement Circuit Fig.16 Gate Charge Waveforms 4/4 |
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