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LBN150B01
150 mA LOAD SWITCH FEATURING COMPLEMENTARY BIPOLAR TRANSISTORS
General Description NEW PRODUCT
* LMN150B01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete PNP pass transistor with stable Vce_sat which does not depend on the input voltage and can support maximum continuous current of 150 mA up to 125 C (see fig. 3). It also contains a discrete NPN that can be used as a control. The component devices can be used as a part of a circuit or as stand alone discrete devices.
6 5 4 1 2 3
Fig. 1: SOT-26
CQ1
6
Features
* * * * Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/ROHS Compliant (Note 1) "Green" Device (Note 2)
EQ2
5
CQ2
4
Mechanical Data
* * * * * * * * Case: SOT-26 Case Material: Molded Plastic. "Green Molding" Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL- STD -202, Method 208 Marking & Type Code Information: See Page 8 Ordering Information: See Page 8 Weight: 0.016 grams (approximate)
NPN_MMST3904 Q1 PNP_MMST3906 Q2
1
2
3
EQ1
BQ1
BQ2
Fig. 2: Schematic and Pin Configuration
Sub-Component P/N MMST3906 MMST3904
Reference Q1 Q2
Device Type PNP Transistor NPN Transistor
Figure 2 2
Maximum Ratings, Total Device
Characteristic Output Current
@TA = 25C unless otherwise specified Symbol Iout Value 150 Unit mA
Thermal Characteristics
@TA = 25C unless otherwise specified Symbol Pd Pder Tj,Tstg RJA Value 300 2.33 -55 to +150 417 Unit mW mW/C C C/W
Characteristic Power Dissipation (Note 3) Power Derating Factor above 120 C Junction Operation and Storage Temperature Range Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to one heated junction of PNP transistor)
Notes:
1. No purposefully added lead. 2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Page 9.
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Maximum Ratings: @TA = 25C unless otherwise specified Sub-Component Device - Discrete PNP Transistor (Q1) NEW PRODUCT
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Output Current - continuous (Note 4) Symbol VCBO VCEO VEBO IC Value -40 -40 -6 -200 Unit V V V mA
Maximum Ratings: @TA = 25C unless otherwise specified Sub-Component Device - Discrete NPN Transistor (Q2)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Output Current - continuous (Note 4)
Notes: 4. Short duration pulse test used to minimize self-heating effect.
Symbol VCBO VCEO VEBO IC
Value 60 40 6 200
Unit V V V mA
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Electrical Characteristics: Discrete PNP Transistor (Q1)
Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Symbol VCBO VCEO VEBO ICEX IBL ICBO ICEO IEBO Min -40 -40 -6 105 110 DC Current Gain hFE 120 90 32 10 Collector-Emitter Saturation Voltage Equivalent on-resistance Base-Emitter Turn-on Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) RCE(SAT) VBE(ON) VBE(SAT) 2 0.1 100 3 250 Max -50 -50 -50 -50 -50 -0.08 -0.15 -0.5 2.5 -0.92 -0.95 -1.1 4 8 12 10 400 60 4 35 35 225 75
@TA = 25C unless otherwise specified Unit V V V nA nA nA nA nA V V V Test Condition IC = -10uA, IE = 0 IC = -1.0mA, IB = 0
B
NEW PRODUCT
Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current Collector-Base Cut Off Current Collector-Emitter Cut Off Current Emitter-Base Cut Off Current ON CHARACTERISTICS (Note 4)
IE = -10A, IC = 0 VCE = -30V, VEB(OFF) = -3.0V VCE = -30V, VEB(OFF) = -3.0V VCB = -30V, IE = 0 VCE = -30V, IB = 0
B
VEB = -5V, IC = 0 VCE = -1V, IC = -100 A VCE = -1V, IC = -1 mA VCE = -1V, IC = -10 mA VCE = -1V, IC = -50 mA VCE = -1V, IC = -100 mA VCE = -1V, IC = -200 mA IC = - 10 mA, IB = -1 mA
B
IC = -50mA, IB = -5mA IC = -200mA, IB = -20mA IC = -200mA, IB = -20mA
B
VCE = -5V, IC = -200mA IC = -10mA, IB = -1mA
B
IC = -50mA, IB = -5mA
B
COBO CIBO hIE hRE hFE hOE fT NF
pF pF K x 10E-4 S MHz dB ns ns ns ns
VCB = -5.0 V, f = 1.0 MHz, IE = 0 VEB = -5.0 V, f = 1.0 MHz, IC = 0
VCE = 1.0V, Ic = 10mA, f = 1.0 KHz
VCE = - 20V, IC = -10mA, f = 100 MHz VCE = - 5V, Ic = -100 uA, Rs = 1, f =1 KHz VCC = -3.0 V, IC = -10 mA, VBE(OFF) = 0.5V, IB1 = -1.0 mA VCC = -3.0 V, IC = -10 mA, IB1 = IB2 = -1.0 mA
td tr ts tf
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Electrical Characteristics: Discrete NPN Transistor (Q2)
Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Symbol VCBO VCEO VEBO ICEX IBL ICBO ICEO IEBO Min 60 40 6 150 170 DC Current Gain hFE 160 70 30 12 Collector-Emitter Saturation Voltage Equivalent on-resistance Base-Emitter Turn-on Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time VCE(SAT) RCE(SAT) VBE(ON) VBE(SAT) 2 0.1 100 3 250 Max 50 50 50 50 50 0.08 0.16 0.36 1.8 0.98 0.95 1.1 4 8 12 10 400 60 4 35 35
@TA = 25C unless otherwise specified Unit V V V nA nA nA nA nA V V V Test Condition IC = 10uA, IE = 0 IC = 1.0mA, IB = 0
B
NEW PRODUCT
Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current Collector-Base Cut Off Current Collector-Emitter Cut Off Current Emitter-Base Cut Off Current ON CHARACTERISTICS (Note 4)
IE = 10A, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V VCB = 30V, IE = 0 VCE = 30V, IB = 0
B
VEB = 5V, IC = 0 VCE = 1V, IC = 100 A VCE = 1V, IC = 1 mA VCE = 1V, IC = 10 mA VCE = 1V, IC = 50 mA VCE = 1V, IC = 100 mA VCE = 1V, IC = 200 mA IC = 10 mA, IB = 1 mA
B
IC = 50mA, IB = 5mA IC = 200mA, IB = 20mA IC = 200mA, IB = 20mA
B
VCE = 5V, IC = 200mA IC = 10mA, IB = 1mA
B
IC = 50mA, IB = 5mA
B
COBO CIBO hIE hRE hFE hOE fT NF
pF pF K x 10E-4 S MHz dB ns ns
VCB = 5.0 V, f = 1.0 MHz, IE = 0 VEB = 5.0 V, f = 1.0 MHz, IC = 0
VCE = 1.0V, Ic = 10mA, f = 1.0 KHz
VCE = 20V, IC = 0mA, f = 100 MHz VCE = 5V, Ic = 100 uA, Rs = 1, f =1 KHz VCC = -3.0 V, IC = 10 mA, VBE(OFF) = 0.5V, IB1 = 1.0 mA
td tr
Typical Characteristics
350 300 PD, POWER DISSIPATION (mW) 250 200 150 100
50 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (C) Fig. 3, Max Power Dissipation vs Ambient Temperature
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Characteristics of PNP Transistor (Q1):
10,000
200
hFE,, DC CURRENT GAIN
1,000
TA = 150C TA = 125C
100 TA = 85C TA = 25C TA = -55C
IC, COLLECTOR CURRENT (mA)
NEW PRODUCT
150
100
10
50
1 0.1
0
1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, hFE vs IC 1000
0
6 8 2 4 10 VCE, COLLECTOR - EMITTER VOLTAGE (V) Fig. 5, IC vs VCE
100 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
IC/IB = 10
1.4 VBE, BASE-EMITTER VOLTAGE (V) 1.2 1 TA = 25C 0.8 0.6 0.4 0.2 0 TA = 125C TA = 150C TA = -55C
10
TA = 150C TA = 125C
1
0.1
TA = 85C
TA = 85C
TA = -55C TA = 25C 0.01 0.1 1 10 100 1000
0.1
IC, COLLECTOR CURRENT (mA) Fig. 6, VCE(SAT) vs IC
1.4 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1.2 1 0.8 0.6 0.4 0.2 TA = 125C TA = -55C
1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7, VBE vs IC
1000
15
CIBO/COBO, CAPACITANCE (pF)
12
9
TA = 150C
6
CIBO
3
COBO
0 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 8, VBE (SAT) vs IC
1 10 12 14 16 18 VR, REVERSE VOLTAGE (V) Fig. 9, Input/Output Capacitance vs VR 20
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Characteristics of NPN Transistor (Q2):
10,000
Vce = 1V TA = 150C
IB = 5mA
200
IB = 4.5mA IB = 4mA IB = 3.5mA IB = 3mA
NEW PRODUCT
hFE, DC CURRENT GAIN
1,000
TA = 125 C
IC, COLLECTOR CURRENT (mA)
150
100
TA = 85C
TA = 25C T A = -55C
100
10
50
IB = 0.5mA
IB = 1mA
IB = 1.5mA
IB = 2mA
IB = 2.5mA
1 0.1 1 10 100 1000
0 0 2 4 6 8 10
IC, COLLECTOR CURRENT (mA) Fig. 10, hFE vs IC
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 100
Ic/Ib = 10
VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 11, IC vs VCE
1.4
Vce = 1V
10
VBE, BASE-EMITTER VOLTAGE (V)
1.2 1
TA = -55C
0.8 0.6
T A = 25C
1
TA = 125C TA = 150 C TA = 85 C
T A = 85 C
0.1
TA = -55C TA = 25C
0.4
TA = 125C
0.2 0
TA = 150 C
0.01 0.1 1 10 100 1000
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA) Fig. 12, VCE(SAT) vs IC 1.4
Vce = 1V
IC, COLLECTOR CURRENT (mA) Fig. 13, VBE vs IC
6
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
1.2 1 0.8 0.6
TA = 125C
TA = -55C
CIBO/COBO, CAPACITANCE (pF)
5
4
TA = 25C TA = 150 C
3
CIBO
0.4 0.2 0 0.1
TA = 85 C
2
COBO
1
10 1 100 IC, COLLECTOR CURRENT (mA) Fig. 14, VBE vs IC
1000
10 12 14 16 18 VR, REVERSE VOLTAGE (V) Fig. 15, Input/Output Capacitance vs VR
20
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Application Details
* PNP Transistor (MMST3906) and NPN Transistor (MMST3904) integrated as one in LBN150B01 can be used as a discrete entity for general purpose applications or as a part of a circuit to function as a Load Switch. When it is used as the latter as shown in Fig 16, various input voltage sources can be used as long as they do not exceed the maximum rating of the device. These devices are designed to deliver continuous output load current up to maximum of 150 mA. The use of the NPN as a switch eliminates the need for higher current required to overcome the gate charge in the event an N-MOSFET is used. Care must be taken for higher levels of dissipation while designing for higher load conditions. These devices provides power on demand and also consume less space. It mainly helps in optimizing power usage, thereby conserving battery life in a controlled load system like portable battery powered applications. (Please see Fig. 17 for one example of typical application circuit used in conjunction with a voltage regulator as a part of power management system).
MMST3906
Vin
EQ1
Q1
CQ1 PNP BQ1
Vo ut
R1 10K LOAD
NEW PRODUCT
R2
220
MMST3904
CQ2 Q2 EQ2
NPN
Control
BQ2
Fig. 16: Example Circuit Schematic
Typical Application Circuit
5VSupply U1 U3
Load Switch
Vin Vin U2 1 E_Q1 2 B_Q1 B_Q2 C_Q1 6 Vo u t IN OUT
Point of Load
Control Logic Circuit (PIC, Comparator, etc)
GND
E_Q2 C_Q2
5 GND 4
Control OUT1 3
LBN150B01 Diodes, Inc.
Voltage Regulator
Fig. 17
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Ordering Information (Note 5) NEW PRODUCT
Device LBN150B01-7
Notes: 5.
Marking Code PM4
Packaging SOT-26
Shipping 3000/Tape & Reel
For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
PM4
PM4 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September
Fig. 18 Date Code Key Year Code Month Code 2006 T Jan 1 Feb 2 2007 U Mar 3 Apr 4 2008 V May 5 Jun 6 2009 W Jul 7 2010 X Aug 8 Sep 9 2011 Y Oct O Nov N 2012 Z Dec D
Marking Information
A
YM
SOT-26 Dim A
BC
Min 0.35 1.50 2.70 - - 2.90 0.013 1.00 0.35 0.10 0
Max 0.50 1.70 3.00 - - 3.10 0.10 1.30 0.55 0.20 8
Typ 0.38 1.60 2.80 0.95 0.55 3.00 0.05 1.10 0.40 0.15 -
B C D
H
F
K M
H J K L M
J
D
F
L
Fig. 19
All Dimensions in mm
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Suggested Pad Layout: (Based on IPC-SM-782)
E E
NEW PRODUCT
Figure 20 Dimensions Z G X Y C E
SOT-26 3.2 1.6 0.55 0.8 2.4 0.95
Z
G
C
All Dimensions in mm
Y X
Fig. 20
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
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