 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IMX9 Transistors General purpose transistor (isolated dual transistors) IMX9 Features 1) Two 2SD2114K chips in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. External dimensions (Units : mm) 2.90.2 1.90.2 0.95 0.95 (4) (5) (6) 1.1 +0.2 -0.1 0.80.1 +0.2 -0.1 2.80.2 0~0.1 (3) Structure Epitaxial planar type NPN silicon transistor The following characteristics apply to both Tr1 and Tr2. All terminals have same dimensions ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol: X9 Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 25 20 12 500 300(TOTAL) 150 -55~+150 Unit V V V mA mW C C Equivalent circuit (4) (5) (6) Tr1 Tr2 (3) (2) (1) 200mW per element must not be exceeded. Electrical characteristics (Ta = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Output On-resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Ron Min. 25 20 12 - - - 560 - - - Typ. - - - - - 0.18 - 350 8 0.8 Max. - - - 0.5 0.5 0.4 2700 - - - Unit V V V A A V - MHz pF IC=10A IC=1mA IE=10A VCB=20V VEB=10V IC/IB=500mA/20mA VCE=3V, IC=10mA VCE=10V, IE=-50mA, f=100MHz VCB=10V, IE=0A, f=1MHz IB=1mA, Vi=100mVrms, f=1kHz Conditions 0.3~0.6 (2) (1) +0.1 0.3 -0.05 1.6 +0.1 0.15 -0.06 IMX9 Transistors Packaging specifications Packaging type Code Part No. IMX9 Basic ordering unit (pieces) Taping T110 3000 Electrical characteristic curves 2.0 COLLECTOR CURRENT : IC (mA) 1.6 2.0A 1.8A 1.4A 1.2A 800 1.2mA 1.0mA COLLECTOR CURRENT : IC (mA) 1.6A COLLECTOR CURRENT : IC (mA) Ta=25C 1000 1.8mA 2.0mA 1.6mA 1.4mA 1000 500 200 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 Ta=100C 25C -25C VCE=3V Measured using pulse current. 1.2 1.0A 0.8A 600 0.8mA 0.6mA 0.8 0.6A 0.4 0.4A 0.2A 0 0 IB=0 0.1 0.2 0.3 0.4 0.5 400 0.4mA 0.2mA 200 0 0 2 Ta=25C Measured using IB=0mA pulse current. 4 6 8 10 1.0 1.2 1.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter output characteristics() Fig.2 Grounded emitter output characteristics () Fig.3 Grounded emitter propagation characteristics 10000 5000 DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 2000 1000 500 200 100 50 20 10 1 2 5 10 20 DC CURRENT GAIN : hFE Ta=25C Measured using pulse current. VCE=5V 10000 5000 2000 1000 500 200 100 50 20 Ta=100C 25C -25C VCE=3V Measured using pulse current. 2000 1000 500 200 100 50 20 10 5 2 1 2 5 10 20 IC/IB=100 50 25 10 Ta=25C Measured using pulse current. 3V 1V 50 100 200 500 1000 10 1 2 5 10 20 50 100 200 500 1000 50 100 200 5001000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current () Fig.5 DC current gain vs. collector current () Fig.6 Collector-emitter saturation voltage vs. collector current () IMX9 Transistors COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) BASE SATURATION VOLTAGE : VBE(sat) (mV) BASE SATURATION VOLTAGE : VBE(sat) (mV) 2000 1000 500 200 100 50 20 10 5 2 1 2 5 10 20 Ta=100C 25C -25C IC/IB=25 Measured using pulse current. 10000 5000 2000 1000 500 200 100 50 20 10 1 2 5 10 20 IC/IB=10 25 50 100 Ta=25C Pulsed 10000 5000 2000 1000 500 200 100 50 20 10 1 2 5 10 20 Ta=-25C 25C 100C lC/lB=10 Measured using pulse current. 50 100 200 5001000 50 100 200 500 1000 50 100 200 5001000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current () Fig.8 Base-emitter saturation voltage vs. collector current () Fig.9 Base-emitter saturation voltage vs. collector current () COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 10000 TRANSITION FREQUENCY : fT (MHz) 5000 2000 1000 500 200 100 50 20 10 -1 -2 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 ON RESISTANCE : Ron () Ta=25C VCE=10V Measured using pulse current. 1000 500 100 Ta=25C f=1MHz IE=0A 50 20 10 5 2 1 0.5 0.2 0.1 0.01 0.02 0.05 0.1 0.2 0.5 Ta=25C f=1kHz Vi=100mV(rms) RL=1k -5 -10 -20 -50 -100-200 -500-1000 EMITTER CURRENT : IE (mA) 1 2 5 10 COLLECTOR TO BASE VOLTAGE : VCB (V) BASE CURRENT : IB (mA) Fig.10 Gain bandwidth product vs. emitter current Fig.11 Collector output capacitance vs. collector-base voltage Fig.12 Output-on resistance vs. base current Ron measurement circuit RL=1k Input Vi 1kHz 100mV(rms) IB V Output V0 Ron= V0 xRL Vi-V0 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0 |
Price & Availability of IMX9
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |