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FMM5807X
21-27GHz Power Amplifier MMIC
FEATURES
* * * * * * High Output Power: P1dB = 30dBm (Typ.) High Gain: G1dB = 14dB (Typ.) High PAE: add = 20% (Typ.) Wide Frequency Band: 21-27 GHz Impedance Matched Zin/Zout = 50 0.25m PHEMT Technology
DESCRIPTION
The FMM5807X is a high-gain, wide band 3-stage MMIC amplifier designed for operation in the 21-27GHz frequency range. This amplifier has an input and output designed for use in 50 systems. This device is well suited for millimeter wave radio applications. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Item Drain-Source Voltage Gate-Source Voltage Input Power Storage Temperature Operating Backside Temperature Symbol VDD VGG Pin Tstg Top Condition Rating 10 -3.0 25 -65 to +175 -40 to +85 Unit V V dBm C C
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 6 volts. 2. The forward and reverse gate currents should not exceed 4.0 and -0.33 mA respectively. 3. This product should be hermetically packaged.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25C)
Item Frequency Range Output Power at 1 dB G.C.P. Power Gain at 1 dB G.C.P. Drain Current Power-Added Efficiency Input Return Loss Output Return Loss Symbol f P1dB G1dB Iddrf add RLin RLout VDD = 6V f = 21 ~ 27 GHz *: at f = 21-24 GHz **: at f = 24-27 GHz IDD = 650mA (Typ.) ZS = ZL = 50 27* 28** 10 Conditions Min. Limits Typ. Max. 21 - 27 29* 30** 14 700 20 -12 -8 19 950 Unit GHz dBm dB mA % dB dB
Note: RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1)
G.C.P.: Gain Compression Point
Edition 1.2 January 2001
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FMM5807X
21-27GHz Power Amplifier MMIC
P1dB, G1dB vs. VDD IDD = 0.6IDSS f = 26GHz 35 P1dB (dBm), G1dB (dBm) 30 25 20 15
P1dB G1dB
OUTPUT POWER & INPUT POWER vs. FREQUENCY
VDD = 6V, IDD = 650mA
34 32 Output Power (dBm) 30 28 26 24 22
6dBm 8dBm 10dBm 11dBm
12dBm 13dBm 14dBm 15dBm
16dBm
4
5 VDD
6
7
21 22 23 24 25 26 27 Frequency (GHz)
P1dB, G1dB vs. FREQUENCY
OUTPUT POWER vs. IMD -20 VDD = 6V, IDS = 650mA f = 10MHz
21 GHz IM3 21 GHz IM5 26.5 GHz IM3 26.5 GHz IM5
34 P1dB (dBm) 32 30
IDD = 650mA VDD = 6V
-25 -30 -35 IMD (dBc)
18 16 14 12 10 G1dB (dB)
28 26
-40 -45 -50 -55 -60
21
22
23
24
25
26
27
Frequency (GHz)
14
16
18
20
22
24
26
28
Total Output Power (dBm)
2
FMM5807X
21-27GHz Power Amplifier MMIC BONDING/ASSEMBLY DRAWING
VDD
220pF
0.15F
RFin
RFout
220pF
220pF
VGG 0.15F
VDD 0.15F
S-PARAMETERS VDD = 6V, IDD = 650mA FREQUENCY S11 (MHZ) MAG ANG
18000 18500 19000 19500 20000 20500 21000 21500 22000 22500 23000 23500 24000 24500 25000 25500 26000 26500 27000 27500 28000 28500 29000 29500 30000 .776 .740 .698 .655 .613 .566 .520 .476 .433 .400 .367 .339 .308 .276 .243 .204 .166 .121 .064 .038 .140 .286 .408 .445 .453 72.5 65.1 57.8 50.9 44.5 38.3 31.9 26.4 21.2 16.1 10.8 5.7 -0.5 -7.1 -13.7 -22.5 -30.8 -44.7 -70.0 176.2 117.5 86.2 52.4 23.9 2.0
S21 MAG
3.842 4.541 5.287 6.001 6.588 6.949 7.057 7.001 6.807 6.568 6.314 6.104 5.956 5.838 5.799 5.832 5.924 6.109 6.364 6.673 6.840 6.228 4.231 2.273 1.145
S12 ANG MAG
.003 .005 .004 .005 .005 .004 .003 .004 .005 .005 .004 .003 .003 .005 .005 .006 .008 .006 .009 .008 .009 .007 .004 .003 .009
S22 ANG MAG
.702 .617 .510 .381 .230 .082 .100 .215 .309 .380 .425 .444 .452 .451 .436 .419 .391 .351 .309 .269 .250 .292 .330 .350 .382
ANG
63.2 52.6 41.5 29.7 21.6 32.9 123.2 129.2 121.0 111.4 100.1 90.0 80.2 70.6 61.0 50.8 39.8 27.4 14.7 2.3 -9.2 -34.1 -73.1 -113.7 -145.3
10.4 -16.8 -45.5 -75.6 -106.9 -138.6 -170.2 159.2 129.6 100.8 72.6 45.1 17.8 -9.8 -37.5 -66.5 -96.6 -128.9 -164.0 156.2 109.2 52.2 -8.6 -59.9 -100.4
-91.0 -75.1 -88.7 -82.5 -107.9 -68.8 -81.6 -42.0 -78.6 -75.2 -88.8 -45.0 -86.7 -80.9 -67.7 -59.8 -67.8 -60.7 -71.9 -91.5 -100.9 -119.9 -96.0 -59.5 -77.3
Download S-Parameters, click here
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FMM5807X
21-27GHz Power Amplifier MMIC
CHIP OUTLINE
VGG1 0 VDD1 235 2200 2110 2020 VDD2 1290 VDD4 2950 3450
620
2225
Unit: m
2200 2015
1330
RFin
RFout
1275
180 185 90 0 0
0 105 265
620
1290 VDD3
2225
2950 VDD5
3350 3450
VGG2 Chip Size: 345030m x 220030m Chip Thickness: 70m DC Pad Dimensions: VGG: 80 x 80m VDD: 100 x 100m RF Pad Dimensions: 120m x 80m
For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
* Do not ingest. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0500M200
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