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| Semiconductor SI5314-H / SI5314-H(B) IRED Features * Low power consumption * Colorless transparency lens type * 5mm(T-13/4) all plastic mold type * High radiant intensity Applications * Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors. Outline Dimensions unit : mm STRAIGHT TYPE STOPPER TYPE PIN Connections 1.Anode 2.Cathode KLI-8005-002 1 SI5314-H / SI5314-H(B) Absolute maximum ratings Characteristic Power Dissipation Forward Current * Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature * Soldering Temperature 2 1 Symbol PD IF IFP VR Topr Tstg Tsol Ratings 150 100 1 4 -25 -30 260 85 100 for 5 seconds Unit mW mA A V *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of IRED package Electrical Characteristics Characteristic Forward Voltage Radiant Intensity Peak Wavelength Spectrum Bandwidth Reverse Current R Symbol VF IE Test Condition IF= 50mA IF= 50mA IF= 50mA IF= 50mA VR=4V IF= 50mA Min. 15 - Typ. 1.3 35 950 50 25 Max. 1.7 10 - Unit V mW/Sr nm nm uA deg P * Half angle 3 /2 1 *3. 1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity KLI-8005-002 2 SI5314-H / SI5314-H(B) Characteristic Diagrams Fig. 1 IF - VF Fig. 2 IE - IF Forward Voltage VF [V] Radiant Intensity IE [mW/Sr] Forward Current IF [mA] Forward Current IF [mA] Fig. 3 IF - Ta Fig.4 Spectrum Distribution Forward Current IF [mA] Relative Intensity [%] Ambient Temperature Ta [ ] Wavelength [nm] Fig. 5 Radiation Diagram Relative Radiant Intensity IE [%] KLI-8005-002 3 |
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