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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistor Array
MRF9002R2
1.0 GHz, 2 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. * Typical Performance at 960 MHz, 26 Volts Output Power -- 2 Watts Per Transistor Power Gain -- 18 dB Efficiency -- 50% * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Available in Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
N.C. N.C. GATE1 N.C. GATE2 N.C. GATE3 N.C. CASE 978-03 PLASTIC PFP-16
PIN CONNECTIONS
1 2 3 4 5 6 7 8 (Top View) NOTE: Exposed backside flag is source terminal for transistors. 16 15 14 13 12 11 10 9 DRAIN 1-1 DRAIN 1-2 DRAIN 2-1 DRAIN 2-2 N.C. DRAIN 3-1 DRAIN 3-2 N.C.
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Total Dissipation Per Transistor @ TC = 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 -0.5, +15 4 -65 to +150 150 Unit Vdc Vdc Watts C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case, Single Transistor Symbol RJC Max 12 Unit C/W
MOISTURE SENSITIVITY LEVEL
Test Methodology Per JESD 22-A113 Rating 3
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 3
MOTOROLA RF Motorola, Inc. 2002 DEVICE DATA
MRF9002R2 1
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 25 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 0.1 Adc) VGS(th) VGS(Q) VDS(on) 2.4 3 -- -- -- 0.3 4 5 -- Vdc Vdc Vdc
FUNCTIONAL TESTS (Per Transistor in Motorola Test Fixture, 50 ohm system)
Common-Source Amplifier Power Gain @ P1dB (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) Drain Efficiency @ P1dB (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) Input Return Loss @ P1dB (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) Power Output, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 2 W CW, IDQ = 25 mA, f = 960.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Gps IRL P1dB No Degradation In Output Power 15 35 -- 34 18 50 -15 37 -- -- -9 -- dB % dB dBm
MRF9002R2 2
MOTOROLA RF DEVICE DATA
VGS1 Z1 C1 VGS2 Z6 C3 VGS3 RF3 INPUT Z11 C5 Z12 C15 Z7 C13 Z2 C14
+ C7 R1 Z3
L1
DUT
L4 Z4
+ C8 Z5 C16
VDS1 RF1 OUTPUT
RF1 INPUT
C2 VDS2
+ C9 R2 Z8
L2
L5 Z9
+ C10 Z10 C18
RF2 INPUT
C4 VDS3
RF2 OUTPUT
+ C11 R3 Z13
L3
L6 Z14
+ C12 Z15 C17
C6
RF3 OUTPUT
Figure 1. MRF9002R2 Broadband Test Circuit Schematic
Table 1. MRF9002R2 Broadband Test Circuit Component Designations and Values
Designators C1-C6 C7-C12 C13 C14, C15 C16, C17 C18 L1-L6 R1-R3 Z1, Z11 Z2, Z7, Z12 Z3, Z8, Z13 Z4, Z14 Z5, Z15 Z6 Z9 Z10 PCB Raw PCB Material Bedstead 33 pF Chip Capacitors (0805) 1.0 F, 35 V Tantalum Capacitors, B Case, Kemet 8.2 pF Chip Capacitor (0805) 10 pF Chip Capacitors (0805) 2.7 pF Chip Capacitors (0805) 3.3 pF Chip Capacitor (0805) 12 nH Chip Inductors (0805) 0 W Chip Resistors (0805) 1.16 x 28.5 mm Microstrip 0.65 x 5.6 mm Microstrip 0.65 x 2.6 mm Microstrip 1.16 x 19.5 mm Microstrip 1.16 x 17.5 mm Microstrip 1.16 x 12.9 mm Microstrip 1.16 x 27.2 mm Microstrip 1.16 x 4.3 mm Microstrip Etched Circuit Board Rogers RO4350, 0.020, 2.5, x 2.5, er = 3.5 Copper Heatsink Description
MOTOROLA RF DEVICE DATA
MRF9002R2 3
RF1 INPUT C1 VGS1 VGS2 C7 C16 C8
RF1 OUTPUT C2 VDS1 VDS2
C10 C9 L1 RF2 INPUT C3 C13 R3 L3 MRF9002 960 MHz Rev. B C11 VGS3 C5 RF3 INPUT C6 RF3 OUTPUT C15 L6 L2 R2 R1
Pin 1
C14
L4
L5
RF2 OUTPUT C18 C4
C17
C12
VDS3
Figure 2. MRF9002R2 Broadband Test Circuit Component Layout
MRF9002R2 4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
35 33 Pout , OUTPUT POWER (dBm) 31 29 27 25 23 21 19 17 15 0 2 4 6 8 10 VDS = 26 Vdc IDQ = 25 mA f = 960 MHz Single-Tone 12 14 Pout Gps 19.5 19.25 19 18.75 18.5 18.25 18 17.75 17.5 17.25 17 16 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 23 22 21 20 19 18 17 16 15 10 15 20 25 30 25 mA VDS = 26 Vdc f = 960 MHz Single-Tone 35 40 Pout, OUTPUT POWER (dBm) 100 mA 75 mA 50 mA
Pin, INPUT POWER (dBm)
Figure 3. Output Power and Power Gain versus Input Power
20.3 Gps G ps , POWER GAIN (dB) 20.2 -29 -28 -20 -25 -30 -35 -40 -45 -50 -55
Figure 4. Power Gain versus Output Power
20.1 IMD Pout = 2 W (PEP) IDQ = 25 mA f1 = 960.0 MHz, f2 = 960.1 MHz 22 23 24 25 26 27 28 29 30 VDS, DRAIN SOURCE SUPPLY (VOLTS)
-30
IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc)
25 mA 50 mA 75 mA VDS = 26 Vdc f1 = 960.0 MHz, f2 = 960.1 MHz 10 15 20 25 30 35 40
20
-31
-60 100 mA -65 5
19.9
-32
Pout, OUTPUT POWER (dBm) PEP
Figure 5. Power Gain and Intermodulation Distortion versus Supply Voltage
0 -10 -20 -30 -40 -50 -60 -70 7th Order VDS = 26 Vdc f1 = 960.0 MHz, f2 = 960.1 MHz 10 15 20 25 30 35 40 5th Order 3rd Order 41 39 Pout , OUTPUT POWER (dBm) 37 35 33 31 29 27 25 925
Figure 6. Intermodulation Distortion versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
Pin = 20 dBm
15 dBm VDS = 26 Vdc IDQ = 25 mA Single-Tone
10 dBm
935
945
955
965
975
985
Pout, OUTPUT POWER (dBm)
f, FREQUENCY (MHz)
Figure 7. Intermodulation Distortion Products versus Output Power
Figure 8. Output Power versus Frequency
MOTOROLA RF DEVICE DATA
MRF9002R2 5
12 11 10 9 C, CAPACITANCE (pF) 8 7 6 5 4 3 2 22 23 24 25 26 27 28 29 30 Crss Coss Ciss
VDS, DRAIN SOURCE SUPPLY (VOLTS)
Figure 9. Capacitance versus Drain Source Voltage
MRF9002R2 6
MOTOROLA RF DEVICE DATA
T1 Zo = 50 f = 925 MHz ZOL* T2 T1 f = 925 MHz Zin 985 MHz f = 925 MHz Zin 985 MHz 985 MHz T2 985 MHz ZOL* f = 925 MHz T3 f = 925 MHz Zin Zo = 50 T3
f = 925 MHz ZOL* 985 MHz
985 MHz
TRANSISTORS 1 and 2 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zin 4.5 - j13.3 4.3 - j15.3 4.1 - j15.8 Transistor 1 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zin 6.0 - j12.3 5.9 - j14.3 5.8 - j16.5 Transistor 2 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zin 4.3 - j12.2 4.3 - j14.0 3.9 - j15.9 Transistor 3 ZOL* 23.1 - j6.5 22.8 - j8.4 22.6 - j9.3 Z in ZOL* 19.7 - j27.8 22.0 - j23.9 22.5 - j25.4 Input Matching Network Device Under Test ZOL* 23.4 - j9.2 23.2 - j10.4 23.0 - j11.1 Zin
TRANSISTOR 3
= Complex conjugate of source impedance.
ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion.
Output Matching Network
Z
* OL
Figure 10. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF9002R2 7
NOTES
MRF9002R2 8
MOTOROLA RF DEVICE DATA
NOTES
MOTOROLA RF DEVICE DATA
MRF9002R2 9
NOTES
MRF9002R2 10
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
h X 45 _
A E2
1 16 NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc MILLIMETERS MIN MAX 2.000 2.300 0.025 0.100 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC --0.600 0_ 7_ 0.200 0.200 0.100
14 x e
D e/2
D1
8
9
E1
8X
B
BOTTOM VIEW
E CB
S
bbb Y
M
b1 c A A2
DATUM PLANE SEATING PLANE
H
C
SECT W-W
ccc C
L1
q
W W L 1.000 0.039 DETAIL Y A1
GAUGE PLANE
CASE 978-03 ISSUE B PLASTIC PFP-16
MOTOROLA RF DEVICE DATA
CCC EE CCC EE
b aaa
M
c1
CA
S
MRF9002R2 11
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852-26668334 Technical Information Center: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors/
MRF9002R2 12
MRF9002R2/D MOTOROLA RF DEVICE DATA

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