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| Transys Electronics LIMITED TO-126C Plastic-Encapsulated Transistors 2SB649/2SB649A FEATURES Power dissipation PCM: 1 W (Tamb=25) 1. EMITTER 2. COLLECTOR 3. BASE TRANSISTOR (PNP) TO-126C Collector current -1.5 A ICM: Collector-base voltage V V(BR)CBO : -180 Operating and storage junction temperature range TJ, Tstg: -55 to +150 123 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE(sat) VBE unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-1mA, IE=0 Ic=-10mA, IB=0 2SB649 2SB649A IE=-1mA, IC=0 VCB=-160V, IE=0 VEB=-4V, IC=0 VCE=-5V, IC=-150mA 2SB649 2SB649A VCE=-5V, IC=-500mA IC=-500mA, IB=-50mA VCE=-5V, IC=-150mA VCE=-5V, IC=-150mA VCB=-10V, IE=0, f=1MHz -180 -120 -160 -5 -10 -10 60 60 30 -1 -1.5 140 27 320 200 A A V V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking B 60-120 C 100-200 D 160-320 |
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