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| SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - DECEMBER 1998 FEATURES FCX1051A C * * * * * 2W POWER DISSIPATION 10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 17mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 57m at 3A FCX1151A 051 E C B Complimentary Type Partmarking Detail - ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 150 40 5 10 3 1 2 -55 to +150 UNIT V V V A A W W C recommended Ptot calculated using FR4 measuring 15x15x0.6mm Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices. Refer to the handling instructions for soldering surface mount components. FCX1051A ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO VCES VCEO VCEV V(BR)EBO ICBO IEBO ICES VCE(sat) Min 150 150 40 150 5 0.3 0.3 0.3 17 85 140 170 250 880 840 290 270 270 130 40 440 450 360 220 55 155 27 220 540 40 10 10 10 25 120 180 250 340 1000 950 Typ Max UNIT V V V V V nA nA nA mV mV mV mV mV mV mV CONDITIONS. IC=100A IC=100A IC=10mA IC=100A, VEB=1V IE=100A VCB=120V VEB=4V VCES=120V IC=0.2A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=20mA* IC=3A, IB=40mA* IC=5A, IB=100mA* IC=3A, IB=40mA* IC=3A, VCE=2V* IC=10mA, VCE=2V* IC=1A, VCE=2V* IC=3A, VCE=2V* IC=5A, VCE=2V* IC=10A, VCE=2V* MHz pF ns ns IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz IC=3A, IB=30mA, VCC=10V IC=3A, IB=30mA, VCC=10V Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE 1200 Transition Frequency Output Capacitance Switching Times fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% FCX1051A TYPICAL CHARACTERISTICS 0.5 +25C 0.5 IC/IB=100 0.4 0.3 0.2 0.1 0 1m 10m 100m 1 10 IC/IB=50 IC/IB=100 IC/IB=200 0.4 0.3 0.2 0.1 0 1m 10m 100m 1 10 -55C +25C +100C +150C IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 750 VCE=2V 1.6 IC/IB=100 600 450 +100C 1.2 +25C -55C +25C +100C +150C 300 -55C 0.8 150 0 1m 10m 100m 1 10 0.4 0 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) hFE v IC VBE(sat) v IC 1.0 0.8 10 1 0.6 0.4 0.2 0 1m 10m 100m 1 10 -55C +25C +100C +150C DC 1s 100ms 10ms 1ms 100us 0.1 0.01 100m 1 10 100 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area |
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