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| SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. E35A23VDS, E35A23VDR STACK SILICON DIFFUSED DIODE F E FEATURES Average Forward Current : IO=35A. Zener Voltage : 23V(Typ.) POLARITY E35A23VDS (+ Type) E35A23VDR (- Type) L1 G B A MAXIMUM RATING (Ta=25 CHARACTERISTIC Average Forward Current Peak 1 Cycle Surge Current Repetitive Peak Revese Voltage Junction Temperature Storage Temperature Range ) SYMBOL IF(AV) IFSM VRRM Tj Tstg RATING 35 350 (10ms Condition) 17 -40 200 -40 200 UNIT A A V DIM MILLIMETERS DIM MILLIMETERS _ _ A 9.5 + 0.2 E 3.1+ 0.1 _ F 1.5 B 8.4 + 0.2 G R0.5 C 1.2 _ L1 5 + 0.4 D 1 DIM TYPE POLARITY S L2 R MILLIMETERS _ 19.0 + 1.0 _ 23.0 + 1.0 PD ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Peak Forward Voltage Reverse Voltage Repetitive Peak Reverse Current Zener Voltage Temperature Coefficient Reverse Leakage Current Under High Temperature Temperature Resistance T ) TEST CONDITION IFM=100A IR=10mA VR=17V IZ=10mA Ta=150 , VR=VRM Junction to case MIN. 20 TYP. 23 0.077 0.8 MAX. 1.15 26 10 2.5 UNIT V V A %/ mA /W SYMBOL VFM VZ IRRM HIR Rth 2000. 7. 11 Revision No : 0 C D L2 1/1 |
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