 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BSS 64 NPN Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 2.9 0.1 1.1 NPN 250 mW SOT-23 (TO-236) 0.01 g 0.4 3 Plastic case Kunststoffgehause 1.3 0.1 Type Code 1 2 2.5 max Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Mae in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temp. - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM IBM Tj TS Grenzwerte (TA = 25/C) BSS 64 80 V 120 V 5V 250 mW 1) 100 mA 250 mA 100 mA 150/C - 65...+ 150/C Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 90 V IE = 0, VCB = 90 V, Tj = 150/C Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 5 V IC = 4 mA, IB = 0.4 mA IC = 50 mA, IB = 15 mA IEB0 VCEsat VCEsat - - - ICB0 ICB0 - - Kennwerte (Tj = 25/C) Typ. - - 1 nA - - Max. 100 nA 50 :A 200 nA 150 mV 200 mV Collector saturation volt. - Kollektor-Sattigungsspg. 1) 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 16 Switching Transistors Characteristics (Tj = 25/C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis 1) VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 10 mA VCE = 1 V, IC = 20 mA Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 25 mA, f = 100 MHz VCB = 10 V, IE = ie = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren fT CCB0 60 MHz - RthA BSS 63 105 MHz 3 pF hFE hFE hFE - 20 - 60 80 55 BSS 64 Kennwerte (Tj = 25/C) Typ. Max. - - - - - 420 K/W 2) Collector-Base Capacitance - Kollektor-Basis-Kapazitat Marking - Stempelung BSS 64 = AM ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 17 |
Price & Availability of BSS64
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |