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| HIGH DYNAMIC RANGE PHEMT * FEATURES 21 dBm Output Power at 1-dB Compression at 18 GHz 9.5 dB Power Gain at 18 GHz 1.0 dB Noise Figure at 18 GHz 55% Power-Added Efficiency DRAIN BOND PAD (2X) GATE BOND PAD (2X) LP7612 SOURCE BOND PAD (2x) DIE SIZE: 18.0X13.0 mils (460x330 m) DIE THICKNESS: 3.9 mils (100 m) BONDING PADS: 1.9X1.9 mils (50x50 m) * DESCRIPTION AND APPLICATIONS The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LP7612 also features Si3 N4 passivation and is available in a P70 ceramic package. Typical applications include high dynamic range receiver preamplifiers for commercial applications including Cellular/PCS systems, WLL and WLAN systems, and broadband amplifiers. * ELECTRICAL SPECIFICATIONS @ TAmbient = 25C Parameter Saturated Drain-Source Current Power at 1-dB Compression Power Gain at 1-dB Compression Power-Added Efficiency Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Gate-Drain Breakdown Voltage Magnitude Thermal Resistivity frequency=18 GHz Symbol IDSS P-1dB G-1dB PAE IMAX GM IGSO VP |VBDGS| |VBDGD| JC Test Conditions VDS = 2 V; VGS = 0 V VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS VDS = 2 V; VGS = 1 V VDS = 2 V; VGS = 0 V VGS = -5 V VDS = 2 V; IDS = 1 mA IGS = 1 mA IGD = 1 mA -0.25 -6 -8 60 Min 40 19 8 Typ 65 21 9.5 55 125 90 1 -0.8 -7 -9 275 10 -1.5 Max 85 Units mA dBm dB % mA mS A V V V C/W Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 1/18/01 Email: sales@filss.com HIGH DYNAMIC RANGE PHEMT * ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current RF Input Power Channel Operating Temperature Storage Temperature Total Power Dissipation Notes: * * Symbol VDS VGS IDS IG PIN TCH TSTG PTOT Test Conditions TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C -- TAmbient = 22 3 C -65 Min Max 8 -3 2xIDSS 10 100 175 175 500 Units V V mA mA mW C C mW LP7612 * Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. Power Dissipation defined as: PTOT (PDC + PIN) - POUT, where PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power Absolute Maximum Power Dissipation to be de-rated as follows above 25C: PTOT= 500mW - (3.3mW/C) x THS where THS = heatsink or ambient temperature. * HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. ASSEMBLY INSTRUCTIONS The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage temperature should be 280-290C; maximum time at temperature is one minute. The recommended wire bond method is thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm) gold wire. Stage temperature should be 250-260C. APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site. * * All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 1/18/01 Email: sales@filss.com |
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